Tin(IV) oxide and indium tin oxide SnO2, ITO

SnO2 (tin(IV) oxide) · CAS 18282-10-5

Tin(IV) oxide (SnO2) is a white, water-insoluble oxide with a bulk band gap of 3.6 eV.

11 sources · Updated 2026-10-26 · CC BY 4.0

Evidence level

5 of 5

Flown or field-proven

Transparency

80.88

Heat

1630 °C

Low absorptance in orbit

0.42

Charge dissipation

10820 Ohm/square

Recipe, share of the weight

  • Sn not statedTin
  • O not statedOxygen
  • In2O3 90%Indium(III) oxide
  • SnO2 10%Tin(IV) oxide

Best for

Transparent conductive ITO films for displays and thin-film solar cells, and SnO2 as the active layer in gas sensors

Weakest at

Indium supply for ITO: China produced 70% of world indium, and USGS reports new Chinese export restrictions on indium from February 2025

Risk at a glance

  • People Low. Irritant dust; not a GHS hazard in most reports
  • If it fails Moderate. Sheet resistance rise under atomic oxygen
  • Corrosion Severe. Reactive metals and chlorine trifluoride react violently with tin(IV) oxide.

Quick facts: SnO2, ITO

Key properties of SnO2, ITO
PropertyValueBasis
Density6.8 to 7.13 g/cm³4 sourced values across conditions
Melting point1,630 °C1 sourced value

What is the density of Tin(IV) oxide and indium tin oxide (SnO2, ITO)?

Tin(IV) oxide and indium tin oxide (SnO2, ITO) has a density of 6.8 to 7.13 g/cm³. The range covers 4 sourced values across the tempers, forms and test conditions the sources report; room-temperature values are used where a source states a temperature.

What is the melting point of Tin(IV) oxide and indium tin oxide (SnO2, ITO)?

Tin(IV) oxide and indium tin oxide (SnO2, ITO) has a melting point of 1,630 °C. The source and test conditions are listed in the properties table on this page.

What is Tin(IV) oxide and indium tin oxide (SnO2, ITO) used for?

Uses recorded in the sources include Metal-oxide gas sensors; Dopant in indium tin oxide transparent electrodes; Transparent electrodes in flat-panel displays (ITO).

Why it exists

Tin(IV) oxide is a white, water-insoluble oxide with a bulk band gap of 3.6 eV. Its gas-sensing behavior comes from charge carriers at the surface, which the surface-science review describes in detail. Indium tin oxide adds 10 wt% SnO2 to indium oxide to make a transparent conductive film. The MISSE-9 flight tested ITO sheets in low Earth orbit and the sheets kept usable sheet resistance and low solar absorptance, which makes the film a candidate for thermal control and charge dissipation.

Where it's used

Metal-oxide gas sensors

A surface-science review uses tin dioxide as the model system for metal-oxide gas sensing materials, and explains the gas response as a change in charge carriers at the oxide surface.

Transparent conductor for displays

The standard ITO target is 90 wt% In2O3 and 10 wt% SnO2. USGS reports that ITO coatings are used mainly in flat-panel displays, most commonly liquid crystal displays.

Thermal control sheets in orbit

In the MISSE-9 test, ITO-coated sheets were not noticeably damaged by about 0.54 to 0.77 years in low Earth orbit, and the authors judged them suitable as thermal control sheet materials.

Recipe

SnO2 (tin(IV) oxide); ITO is In2O3 with 10 wt% SnO2 in the standard 90/10 target

SnO2 is tin(IV) oxide, one tin and two oxygen per formula unit. Indium tin oxide (ITO) is mostly indium(III) oxide with 10 wt% SnO2 in the standard sputtering target, which is 90 wt% In2O3 and 10 wt% SnO2.

What SnO2, ITO is made of
IngredientShare of the weightWhat it does
Tin Sn not stated The metal in SnO2. The review describes surface tin as changing between Sn(IV) and Sn(II) states, which matters for gas sensing.
Oxygen O not stated Two oxygen per formula unit of SnO2.
Indium(III) oxide In2O3 90% The host oxide in the standard ITO target (90 wt%). Its film is sputtered as the transparent conductor.
Tin(IV) oxide SnO2 10% The dopant in the standard ITO target (10 wt%) and the active oxide in tin-oxide gas sensors.

Weight shares are as printed in the sources.

What it can do

Transparency

80.88

A DC-sputtered ITO film made at 50 W averaged 80.88% transmittance from 400 to 800 nm, on a glass substrate about 200 nm thick.

Heat

1630 °C

Tin(IV) oxide melts at 1630 °C according to the SDS, and the SDS lists the powder as stable under recommended storage.

Low absorptance in orbit

0.42

The ram-facing ITO on Kapton reached a solar absorptance of 0.42 on the flight, against 0.423 for the control sample.

Charge dissipation

10820 Ohm/square

The report says the flown ITO on Kapton kept a sheet resistance low enough to dissipate electrostatic charge.

How it compares

SnO2 is an insoluble oxide with a melting point of 1630 °C and a density of 6.95 g/mL. Indium tin oxide shares this oxide base, but its sputtered films are used for electrical rather than structural properties, with a visible transmittance of 80.88% at 50 W. The table compares density, melting point and film transmittance across the two forms.

The same measurements for each material, so you can compare them. Each row names the key condition under the value; the full conditions and methods are in the numbered notes under Technical details. Other materials are shown beside it; each was measured under its own conditions, so open its page before comparing closely. Compare every grade in the family.

Benchmarks
MeasurementSnO2, ITOAl2O3BaTiO3BeOCaTiO3RCFCeO2CoO and Co3O4CuO, Cu2OHfO2Fe2O3, Fe3O4LSMPZTMgONiONb2O5Al2Si4O10(OH)2Ln2O3SiOMgO-SiO2TiO2WO3V2O5Y2O3ZnOMg-PSZ, ATZ, ZTAYSZ
Thermal behavior and safety
Melting point, tin(IV) oxide1630 °C32030 to 2072 °C1625 °C2578 °C1975 °C1760 °C2600 °C1830 °C1326 °C2774 °Cno datano datano data2800 °C1984 °C1500 °Cno data2304 °C1702 °Cno data1850 °C1472 °C690 °C2410 °C1975 °Cno datano data
Physical and electrical
Density, tin(IV) oxide (SDS)6.95 g/mL13.72 g/cm³6.08 -3.01 g/cu cm4.1 g/cc64 kg/m37.65 g/cm³6.45 g/cm³6 -9.68 g/cc5.24 g/cm³2 g/cm³7.8 g/cm³3.58 g/cm³6.67 g/cm³4.6 g/cm³2.3 g/cc6.51 g/cm³2.13 g/cc2.8 g/cm³4 g/cm³7.2 g/cm³3.4 -> 4.9 g/cm³5.67 g/cm³5.72 g/cm³6.02 g/cm³
Density, tin(IV) oxide (PubChem record)6.95 g/cm³23.72 g/cm³6.08 -3.01 g/cu cm4.1 g/cc64 kg/m37.65 g/cm³6.45 g/cm³6 -9.68 g/cc5.24 g/cm³2 g/cm³7.8 g/cm³3.58 g/cm³6.67 g/cm³4.6 g/cm³2.3 g/cc6.51 g/cm³2.13 g/cc2.8 g/cm³4 g/cm³7.2 g/cm³3.4 -> 4.9 g/cm³5.67 g/cm³5.72 g/cm³6.02 g/cm³
Target density, standard 90/10 rotary ITO target> 7.13 g/cm³73.72 g/cm³6.08 -3.01 g/cu cm4.1 g/cc64 kg/m37.65 g/cm³6.45 g/cm³6 -9.68 g/cc5.24 g/cm³2 g/cm³7.8 g/cm³3.58 g/cm³6.67 g/cm³4.6 g/cm³2.3 g/cc6.51 g/cm³2.13 g/cc2.8 g/cm³4 g/cm³7.2 g/cm³3.4 -> 4.9 g/cm³5.67 g/cm³5.72 g/cm³6.02 g/cm³
Density of the ITO film used in the MISSE-9 erosion calculation6.8 g/cm³83.72 g/cm³6.08 -3.01 g/cu cm4.1 g/cc64 kg/m37.65 g/cm³6.45 g/cm³6 -9.68 g/cc5.24 g/cm³2 g/cm³7.8 g/cm³3.58 g/cm³6.67 g/cm³4.6 g/cm³2.3 g/cc6.51 g/cm³2.13 g/cc2.8 g/cm³4 g/cm³7.2 g/cm³3.4 -> 4.9 g/cm³5.67 g/cm³5.72 g/cm³6.02 g/cm³
ITO coating thickness on the MISSE-9 sheets10 nm9no datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano data
Other measurements
Band gap of bulk SnO23.6 eV4no datano data10.6 eVno datano datano datano data2.17 eV5.65 eVno datano datano datano data3.6 to 4 eVno datano datano datano datano data3.23 eVno datano datano data3.37 eVno datano data
Acute oral LD50, rat, tin(IV) oxide> 20000 mg/kg5no datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano data
Occupational exposure limit, time-weighted average, tin(IV) oxideLimit printed in the SDS exposure controls table2 mg/m36no datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano data
Purity of the standard ITO targetSpecification printed on a vendor product page> 99.99 %no datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano data
Sheet resistance, ITO on Kapton HN/Al, ram flight sample, average10820 Ohm/square10no datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano data29 Ω/squareno datano data
Sheet resistance, ITO on Kapton HN/Al, unexposed material5230 Ohm/square11no datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano data29 Ω/squareno datano data
Solar absorptance, ITO/Kapton HN/Al, ram flight sample0.42 -12no datano datano datano datano datano data93 %0.875 -no datano datano datano datano datano datano datano datano data0.391 -no datano datano datano data0.02 to 0.04 -0.14 to 0.15 -no datano data
Largest solar absorptance change, zenith flight sample0.002 -13no datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano data
Average optical transmittance, 400 to 800 nm, ITO film at 50 WAverage printed in Table 1 of the paper80.88 %14no datano datano datano datano datano datano datano datano datano datano datano datano data40 %79.4 %no datano datano datano datano datano datano datano data> 85 %no datano data

Why choose it, and why not

Good for

  • Transparent conductive films for displays and thin-film solar cells (ITO). The standard target has a density of 7.13 g/cm3 or more and 99.99% purity on an oxide basis.
  • Gas-sensing layers based on SnO2, which the review uses as the model metal-oxide sensing material.
  • Thermal control sheets with a low solar absorptance, shown in the MISSE-9 flight test.

Watch out for

  • Indium supply: China produces 70% of world indium, and USGS reports new export restrictions on indium from February 2025.
  • Sheet resistance can double under atomic oxygen on the ram side of the spacecraft, and some measured values scatter widely.
  • Irritation and lung disease in workers who breathe ITO dust. The NITE carcinogenicity listing could not be checked in this run.
  • Reducing gases change the conductance of SnO2, which is the sensing signal, so the material should not be used as a stable resistor without checking the atmosphere.

SnO2 and ITO are useful oxide materials for transparent conductors, gas sensing and low-absorptance thermal coatings. The space record is limited to thin ITO films on polymer sheets for about 0.77 years in low Earth orbit, and the main supply and health risks are indium-related.

Technical details

For scientists and researchers. Everything above comes from the record below: every number with its method, its conditions and its source.

Notes

The method, full conditions and any caveat for the numbered rows above.

Notes for the numbered rows
#MeasurementMethodConditionsCaveat
1Density, tin(IV) oxide (SDS)Value printed in the physical and chemical properties section of the supplier SDSform tin(IV) oxide powder, CAS 18282-10-5temperature 25 °C—
2Density, tin(IV) oxide (PubChem record)Value printed in the Density entry of the PubChem chemical and physical propertiesform tin(IV) oxide, PubChem record; no temperature printed—
3Melting point, tin(IV) oxideValue printed in the SDS physical and chemical properties section (printed as 1630 °C (2966 °F))form tin(IV) oxide powderThe PubChem physical description prints mp 1127 °C with sublimation at 1800 to 1900 °C; the 1127 value conflicts with the SDS and PubChem melting entries and is not used.
4Band gap of bulk SnO2Value quoted in an open-access review of SnO2 surface science, described as close to the expected bulk valuebasis expected value for bulk SnO2 from low-temperature valence-band photoemission, with the Fermi edge taken at the conduction band minimumform single-crystal SnO2 surfacesThis is the expected bulk gap quoted in the review, not an optical measurement of a film. band_gap is not in the property canon.
5Acute oral LD50, rat, tin(IV) oxideValue printed in the SDS toxicological information section (printed as greater than 20,000 mg/kg)species ratroute oralform tin(IV) oxideoral_ld50 is not in the property canon. The SDS gives no LD50 for the other routes.
6Occupational exposure limit, time-weighted average, tin(IV) oxide—basis time-weighted average as printed for tin(IV) oxide; the SDS adds that tin(II) oxide has its own listing as Snagencies NIOSH REL, OSHA PEL and ACGIH TLV rows in the SDSoccupational_exposure_limit is not in the property canon. The SDS does not state whether the 2 mg/m3 figure is as tin.
7Target density, standard 90/10 rotary ITO targetSpecification value printed on a vendor product page (the page also gives relative density of 95% or more)composition 90 wt% In2O3 and 10 wt% SnO2 standard targetform rotary (tubular) sputtering target, SKU ST11192purity 99.99% on oxide basisVendor specification for the target, not a measured density for the tested batch.
8Density of the ITO film used in the MISSE-9 erosion calculationValue printed in the atomic-oxygen mass-loss table as the ITO densityform ITO thin film about 10 nm thick on Kapton HN/Al and FEP/Ag/Inconel sheetsbasis value used for the mass-loss and erosion-yield calculationA film density used for a calculation, not measured by the authors on a bulk part.
9ITO coating thickness on the MISSE-9 sheetsStated in the description of the ITO test articlesform ITO coating on Kapton HN/Al and FEP/Ag/Inconel sheetsbasis approximately, as printedfilm_thickness is not in the property canon.
10Sheet resistance, ITO on Kapton HN/Al, ram flight sample, averageAverage of the measured values printed in Table 4 (printed as 10,820 Ohm/square)sample M9R-S5 Flight, ITO/Kapton HN/Al, ram orientationexposure ram position, about 0.77 years in low Earth orbitmeasurement four-point probesheet_resistance is not in the property canon. The report says the value is still low enough to dissipate electrostatic charge.
11Sheet resistance, ITO on Kapton HN/Al, unexposed materialOverall average printed in Table 4 for the unexposed Kapton materialsample unexposed backup sheets of ITO/Kapton HN/Albasis overall average for unexposed materialThe unexposed value used as the reference for the doubling reported in Section 5.2.
12Solar absorptance, ITO/Kapton HN/Al, ram flight sampleIntegrated AM0 solar absorptance printed in the figure caption (printed as 0.420)sample M9R-S5 Flight, ram orientationcontrol control sample 0.423 in the same figureexposure about 0.77 years in low Earth orbitspectrum AM0—
13Largest solar absorptance change, zenith flight sampleChange stated in the text of the optical properties section, described as within error of the Cary datasample M9Z-S5 F, ITO/FEP/Ag/Inconel, zenith orientationexposure about 0.54 years in low Earth orbitsolar_absorptance_change is not in the property canon. The report states the change is within instrument error.
14Average optical transmittance, 400 to 800 nm, ITO film at 50 W—wavelength range 400 to 800 nmsputtering power 50 Wthickness about 200 nmsubstrate glassoptical_transmittance is not in the property canon. The same table gives 77.06 at 200 W.

Corrosion and compatibility

What happens when it meets other materials and environments.

Corrosion and compatibility
EnvironmentConcernWhat happens
Reducing gas atmosphere during metal-oxide gas sensing not rated Reducing gases raise the conductance of SnO2, which is the sensing signal and not a damage mechanism.1
Potassium, sodium, magnesium and chlorine trifluoride severe Reactive metals and chlorine trifluoride react violently with tin(IV) oxide.2
Recommended storage in a closed container none The SDS lists tin(IV) oxide as stable under recommended storage conditions.3
Low Earth orbit atomic oxygen, ram and wake positions (MISSE-9 PCE-1) low Atomic oxygen doubled the sheet resistance of the ram-facing ITO on Kapton, while the erosion yields were very low.4
Solar ultraviolet in low Earth orbit (MISSE-9 flight samples) low UV did not change the ITO sheets on Kapton, but it caused a small fluorescence on the FEP/Ag/Inconel sheets.5
Strong oxidizers, strong acids, aluminium, magnesium and alkali metals (PubChem record) not rated PubChem lists these materials as incompatible with the indium tin oxide record.6
Corrosion details
#EnvironmentDetailsTest conditions
1 Reducing gas atmosphere during metal-oxide gas sensing The review explains the gas response as a change in charge carriers at the oxide surface, and the conductance increases in a reducing atmosphere. It argues that removal of lattice oxygen is unlikely to be the main cause of the increase. basis sensing use; the review does not rate damageform single-crystal and sensing SnO2 surfaces
2 Potassium, sodium, magnesium and chlorine trifluoride The PubChem incompatibility notes say that potassium or sodium reduce stannic oxide at gentle heat with incandescence, that heating with magnesium makes it explode, and that chlorine trifluoride reacts violently without flame. basis laboratory incompatibility notes, not a corrosion testform stannic oxide
3 Recommended storage in a closed container The SDS calls the material stable under recommended storage, and it is insoluble in water. It gives no degradation rate for the powder. storage tightly closed container in a dry, well-ventilated place (SDS Section 7)form tin(IV) oxide powder
4 Low Earth orbit atomic oxygen, ram and wake positions (MISSE-9 PCE-1) After about 0.77 years in low Earth orbit, the ram ITO/Kapton HN/Al sheet resistance rose from 5230 to 10820 Ohm/square. The report still calls this low enough to dissipate static charge. The erosion yields were very low, and the wake Kapton sample stayed at 5000 Ohm/square before and after flight. exposure ram, wake and zenith positions, 0.54 to 0.77 years in low Earth orbitmission MISSE-9 PCE-1
5 Solar ultraviolet in low Earth orbit (MISSE-9 flight samples) Post-flight UV luminescence images showed that space exposure did not affect the response of the ITO-coated Kapton/Al sheets to UV. The UV caused a small amount of fluorescence in the ITO-coated FEP/Ag/Inconel material. basis UV luminescence imaging, not a solar absorptance testmission MISSE-9 PCE-1
6 Strong oxidizers, strong acids, aluminium, magnesium and alkali metals (PubChem record) The PubChem incompatibility entry names strong oxidizing agents, potassium, strong acids, aluminum, sodium or sodium oxides and magnesium. The Angstrom Sciences SDS prints no incompatible conditions. basis compound record CID 57350325, which has a generic compositionform indium tin oxide powder

Risks and side effects

Hazards to people, what happens when a cell overheats, and how the material is handled and stored.

For people, tin(IV) oxide powder

The SDS calls the powder not a dangerous substance under GHS, but it may irritate the eyes, skin and airways, and PubChem reports an H335 classification in some company reports.

The powder
The SDS says the powder may be harmful if inhaled and may irritate the respiratory tract, skin and eyes. PubChem reports that 44.7% of company reports do not meet GHS criteria.
Dust
Use exhaust ventilation where dust forms. The stannosis entry in PubChem describes a benign lung change from breathing tin dust or fume.

For people, indium tin oxide

The indium tin oxide supplier SDS classes the material as a respiratory irritant, and PubChem records lung disease in workers who breathed ITO dust.

Respiratory
The Angstrom Sciences SDS lists H335 with the signal word Warning, and PubChem's record also lists H315, H319 and one H372 notification.
Lung disease
PubChem's summary reports indium lung disease in workers exposed to airborne ITO dust in production.

In orbit, ITO coatings

Sheet resistance
On the MISSE-9 flight, the ram-facing ITO on Kapton doubled its sheet resistance, from 5230 to 10820 Ohm/square, after about 0.77 years in low Earth orbit.
Scatter
The FEP/Ag/Inconel sheets gave very scattered readings, with some above 370000 Ohm/square, so the report asks for a repeat with calibrated equipment.

Test details
The original wording and numbers from the sources, for readers who want them.

Failure risks

Failure risks
FailureTrigger and consequence
Sheet resistance rise under atomic oxygenmoderate severityRam-facing ITO on Kapton HN/Al in low Earth orbit for about 0.77 yearsSheet resistance doubled from 5230 to 10820 Ohm/square. The report still considers the value low enough to dissipate static charge.
Unreliable sheet resistance on FEP/Ag/Inconel sheetsmoderate severityPost-flight four-point probe measurements on ITO-coated FEP/Ag/InconelReadings were very scattered, and a few were above 370000 Ohm/square. The report recommends measuring all samples again with calibrated equipment.

Handling and storage

  • Keep the container tightly closed in a dry, well-ventilated place, and provide exhaust ventilation where dust forms (SDS Section 7).
  • Store the indium tin oxide in a cool, dry place in a tightly sealed container. Wash thoroughly after handling and do not blow dust off clothing or skin with compressed air.
  • Tin(IV) oxide is not combustible (PubChem fire hazards entry); its decomposition products under fire conditions are tin and tin oxides (SDS Section 5).

Mitigations

  • For spills, use a HEPA air filter to collect the dust and place it in a closed container, taking care not to raise dust.

Supply and geography

How common the raw materials are and where they come from.

Tin (for SnO2 and ITO)

Top producers (2025)
China 24.5%, Indonesia 21%, Peru 11.4%, Brazil 9.7%, Burma 4.1%
Critical mineral lists
US: listed
Recycling
USGS: about 17,000 tons of tin from old and new scrap was estimated to have been recycled in 2025, 22% of apparent consumption in the United States.
Substitutes
USGS: aluminum, glass, paper, plastic or tin-free steel substitute for tin in cans and containers, and epoxy resins can replace tin in solder.

Indium (for ITO)

Top producers (2025)
China 70%
Critical mineral lists
US: listed
Recycling
USGS: indium is most commonly recovered from ITO scrap in Japan and the Republic of Korea; quantities recovered are not reported.
Substitutes
USGS: antimony tin oxide, carbon nanotube coatings, PEDOT, copper or silver nanowires and graphene have been developed as alternatives to ITO in some uses.