Hafnium oxide HfO2

HfO2 · CAS 12055-23-1 · monoclinic at low temperature

Hafnium oxide (hafnia, HfO2) is a white to off-white, dense, very high-melting oxide.

10 sources · Updated 2026-10-26 · CC BY 4.0

Evidence level

2 of 5

Lab-measured

High-k dielectric

22 to 25

High melting point

2774 °C

Wide band gap

5.53 to 6.04 eV

Dense oxide

9.68 g/cc

Recipe, share of the weight

  • Hf not statedHafnium
  • O not statedOxygen

Best for

High-k dielectric films for transistors (dielectric constant 22 to 25 in a review table) and high-melting thermal barrier coatings for hot parts

Weakest at

Bulk mechanical data were not found in a source opened for this profile, and the space record is a ground simulation that cut the laser damage threshold by up to 46.80% for debris impact

Risk at a glance

  • People Low. Irritant powder, not classified in some records
  • If it fails Moderate. Sintering of a hafnia-based thermal barrier coating
  • Corrosion Moderate. Simulated space conditions lowered the laser damage threshold of HfO2/SiO2 films, most after debris impact.

Quick facts: HfO2

Key properties of HfO2
PropertyValueBasis
Density9.68 g/cm³1 sourced value
Thermal conductivity1.5 W/(m·K)1 sourced value
Melting point2,758 to 2,900 °C4 sourced values across conditions

What is the density of Hafnium oxide (HfO2)?

Hafnium oxide (HfO2) has a density of 9.68 g/cm³. The source and test conditions are listed in the properties table on this page.

What is the thermal conductivity of Hafnium oxide (HfO2)?

Hafnium oxide (HfO2) has a thermal conductivity of 1.5 W/(m·K). The source and test conditions are listed in the properties table on this page.

What is the melting point of Hafnium oxide (HfO2)?

Hafnium oxide (HfO2) has a melting point of 2,758 to 2,900 °C. The range covers 4 sourced values across the tempers, forms and test conditions the sources report; room-temperature values are used where a source states a temperature.

What is Hafnium oxide (HfO2) used for?

Uses recorded in the sources include High-k gate dielectric in CMOS transistors; Hafnia-based thermal barrier coating on gas-turbine blades (EB-PVD top coat); HfO2/SiO2 triple-band high-reflection optical film (ground-tested for space conditions).

Why it exists

Hafnium oxide (hafnia, HfO₂) is a dense, very high-melting oxide. It is used as a high-k dielectric in transistors, where it replaced silicon oxide, and it is studied as a thermal barrier coating for gas-turbine blades. Its limits are the lack of bulk mechanical data in the sources opened, conflicting hazard classifications, and a space record that is a ground simulation only.

Where it's used

Transistor gate dielectric

The review says that Intel's 45 nm and 32 nm high-k metal-gate transistors replaced silicon oxide with hafnium-based oxides.

Gas-turbine thermal barrier coating

A Toshiba paper develops a hafnia-based top coat that resists sintering better than an 8YSZ coating by about 100 °C. Its coating is yttria-stabilized hafnia.

Optical mirror films for space

A 2024 study tested HfO2/SiO2 high-reflection films under simulated near-Earth space conditions and measured the loss of laser damage threshold.

Recipe

HfO2

HfO₂ is a metal oxide. Each formula unit combines one hafnium atom with two oxygen atoms. In the oxide the hafnium is Hf⁴⁺, so two O²⁻ ions balance it. The powder is insoluble in water.

What HfO2 is made of
IngredientShare of the weightWhat it does
Hafnium Hf not stated The metal. Hafnium sits in the oxide as Hf⁴⁺, the hafnium(IV) oxide form named in the Praxair SDS, and its oxide has a crystal structure similar to zirconia (Toshiba paper).
Oxygen O not stated Two oxygen atoms per formula unit balance the charge of the Hf⁴⁺ ion.

Weight shares are as printed in the sources.

What it can do

High-k dielectric

22 to 25

A review table gives a dielectric constant of 22 to 25 for HfO2, well above that of silicon dioxide.

High melting point

2774 °C

Supplier SDS sheets give 2774 °C and 2758 °C, and PubChem gives 2800 °C. The Toshiba paper quotes 2900 °C for hafnia.

Wide band gap

5.53 to 6.04 eV

The review gives band gaps of 5.53 eV (cubic), 5.79 eV (tetragonal), 5.65 eV (monoclinic) and 6.04 eV (amorphous).

Dense oxide

9.68 g/cc

The Angstrom SDS gives 9.68 g/cc, and the Praxair SDS gives a specific gravity of 9.68 (water = 1).

How it compares

The supplier sheets agree on density, at 9.68. They disagree on melting point, with 2758 °C and 2774 °C from the two SDS sheets, 2800 °C from PubChem and 2900 °C from the Toshiba paper. Thermal conductivity is 1.5 W/mK, given in the Toshiba paper for hafnia without a temperature, so it is the only value for that property here.

The same measurements for each material, so you can compare them. Each row names the key condition under the value; the full conditions and methods are in the numbered notes under Technical details. Other materials are shown beside it; each was measured under its own conditions, so open its page before comparing closely. Compare every grade in the family.

Benchmarks
MeasurementHfO2Al2O3BaTiO3BeOCaTiO3RCFCeO2CoO and Co3O4CuO, Cu2OFe2O3, Fe3O4LSMPZTMgONiONb2O5Al2Si4O10(OH)2Ln2O3SiOMgO-SiO2SnO2, ITOTiO2WO3V2O5Y2O3ZnOMg-PSZ, ATZ, ZTAYSZ
Thermal behavior and safety
Melting point, Angstrom Sciences SDSValue printed in a supplier safety data sheet2774 °C2030 to 2072 °C1625 °C2578 °C1975 °C1760 °C2600 °C1830 °C1326 °Cno datano datano data2800 °C1984 °C1500 °Cno data2304 °C1702 °Cno data1630 °C1850 °C1472 °C690 °C2410 °C1975 °Cno datano data
Melting point at 1 atm, Praxair SDS2758 °C12030 to 2072 °C1625 °C2578 °C1975 °C1760 °C2600 °C1830 °C1326 °Cno datano datano data2800 °C1984 °C1500 °Cno data2304 °C1702 °Cno data1630 °C1850 °C1472 °C690 °C2410 °C1975 °Cno datano data
Melting point, PubChem recordExperimental value quoted in a chemical database2800 °C2030 to 2072 °C1625 °C2578 °C1975 °C1760 °C2600 °C1830 °C1326 °Cno datano datano data2800 °C1984 °C1500 °Cno data2304 °C1702 °Cno data1630 °C1850 °C1472 °C690 °C2410 °C1975 °Cno datano data
Melting point of hafnia, Toshiba paper2900 °C22030 to 2072 °C1625 °C2578 °C1975 °C1760 °C2600 °C1830 °C1326 °Cno datano datano data2800 °C1984 °C1500 °Cno data2304 °C1702 °Cno data1630 °C1850 °C1472 °C690 °C2410 °C1975 °Cno datano data
Thermal conductivity of hafnia, Toshiba paper1.5 W/mK930 W/(m·K)6 W/mK285 W/m°Kno data0.06 W/(m·K)no datano datano data5 to 10 W/m Kno datano data42 W/(m·K)no datano datano datano datano data2 W/(m·K)no datano datano datano data14.5 W/mK50 W/mK2.2 W/(m·K)2.2 W/(m·K)
Physical and electrical
Density, Angstrom Sciences SDSValue printed in a supplier safety data sheet9.68 g/cc3.72 g/cm³6.08 -3.01 g/cu cm4.1 g/cc64 kg/m37.65 g/cm³6.45 g/cm³6 -5.24 g/cm³2 g/cm³7.8 g/cm³3.58 g/cm³6.67 g/cm³4.6 g/cm³2.3 g/cc6.51 g/cm³2.13 g/cc2.8 g/cm³6.95 g/mL4 g/cm³7.2 g/cm³3.4 -> 4.9 g/cm³5.67 g/cm³5.72 g/cm³6.02 g/cm³
Bulk density of powder, Praxair SDS1922 to 2883 kg/m310no datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano datano data
Other measurements
Boiling point at 1 atm, Praxair SDS5400 °C3no datano datano datano datano datano datano datano datano datano datano data3600 °Cno datano datano datano data1880 °Cno datano datano data1837 °Cno datano datano datano datano data
Boiling point, PubChem recordExperimental value quoted in a chemical database5400 °Cno datano datano datano datano datano datano datano datano datano datano data3600 °Cno datano datano datano data1880 °Cno datano datano data1837 °Cno datano datano datano datano data
Dielectric constant range, HfO2 (high-k comparison)22 to 25 -49.7 -3000 -no data146 -no datano datano datano datano datano data1800 -9.65 -no datano data2 to 4 -no datano data6 -no datano datano datano datano data8.75 -28 -29 -
Band gap, monoclinic HfO25.65 eV5no datano data10.6 eVno datano datano datano data2.17 eVno datano datano datano data3.6 to 4 eVno datano datano datano datano data3.6 eV3.23 eVno datano datano data3.37 eVno datano data
Band gap, tetragonal HfO25.79 eV6no datano data10.6 eVno datano datano datano data2.17 eVno datano datano datano data3.6 to 4 eVno datano datano datano datano data3.6 eV3.23 eVno datano datano data3.37 eVno datano data
Band gap, cubic HfO25.53 eV7no datano data10.6 eVno datano datano datano data2.17 eVno datano datano datano data3.6 to 4 eVno datano datano datano datano data3.6 eV3.23 eVno datano datano data3.37 eVno datano data
Band gap, amorphous HfO26.04 eV8no datano data10.6 eVno datano datano datano data2.17 eVno datano datano datano data3.6 to 4 eVno datano datano datano datano data3.6 eV3.23 eVno datano datano data3.37 eVno datano data

Why choose it, and why not

Good for

  • High-k dielectric films for transistors. A review table gives a dielectric constant of 22 to 25 and says HfO2 replaced silicon oxide in Intel's high-k gates.
  • High-melting thermal barrier coatings for hot parts. The Toshiba paper reports better sintering resistance than 8YSZ.
  • Optical mirror films. A 2024 study measured how simulated space conditions reduced the laser damage threshold of HfO2/SiO2 films.

Watch out for

  • Conflicting hazard data. The 2006 Praxair SDS warns of irritation, while the 2015 Angstrom SDS and PubChem do not. Check the current supplier SDS before handling.
  • Space data are ground simulation only. The 2024 study found a 63.19% loss of laser damage threshold with all three factors, and no in-orbit result was found.
  • Phase change on heating. Hafnia changes from monoclinic to tetragonal and then cubic, which changes its band gap.

Hafnium oxide is a strong candidate for high-k dielectric films and for high-melting thermal barrier coatings, and the sources give its melting point as between 2758 and 2900 °C. Bulk mechanical data, a measured thermal conductivity for pure HfO2 and a flight record are missing, and the hazard classification is not settled, so the profile is a draft with those gaps stated.

Technical details

For scientists and researchers. Everything above comes from the record below: every number with its method, its conditions and its source.

Notes

The method, full conditions and any caveat for the numbered rows above.

Notes for the numbered rows
#MeasurementMethodConditionsCaveat
1Melting point at 1 atm, Praxair SDSValue printed in a supplier safety data sheet (printed as 4996°F (2758°C))pressure 1 atmform hafnium (IV) oxide, Praxair product P-6348—
2Melting point of hafnia, Toshiba paperValue stated in a conference-style paper introductionbasis hafnia (HfO2) as quoted in the introduction, not a measured value from the paper—
3Boiling point at 1 atm, Praxair SDSValue printed in a supplier safety data sheet (printed as 9752°F (5400°C))pressure 1 atmform hafnium (IV) oxide, Praxair product P-6348—
4Dielectric constant range, HfO2 (high-k comparison)Range compiled in a review table, which cites refs 24 to 28basis range printed for HfO2 in a review table comparing high-k oxidesform film or bulk not stated in the table—
5Band gap, monoclinic HfO2Value quoted in review text, which cites refs 30 and 45 for the phase dependencephase monoclinic (m-HfO2)The review says the band gap changes with crystal phase. The value is not in property-canon, so it uses a short snake_case name.
6Band gap, tetragonal HfO2Value quoted in review text, which cites refs 30 and 45 for the phase dependencephase tetragonal (t-HfO2)—
7Band gap, cubic HfO2Value quoted in review text, which cites refs 30 and 45 for the phase dependencephase cubic (c-HfO2)—
8Band gap, amorphous HfO2Value quoted in review text, which cites refs 30 and 45 for the phase dependencephase amorphous (a-HfO2)—
9Thermal conductivity of hafnia, Toshiba paperValue stated in a paper introduction (printed as 1.5 W/mK)basis hafnia (HfO2) as quoted in the introduction and Figure 1 of the paper; temperature and grain size not statedStated in the same sentence as the 2900 °C melting point. The paper's own coating is yttria-stabilized hafnia, not pure HfO2, so this is the figure for hafnia only.
10Bulk density of powder, Praxair SDSRange printed in a supplier safety data sheet (printed as 120-180 lb/ft3 (1922-2883 kg/m3))form powder, as printed in lb/ft3 and converted in parentheses in the SDS—

Corrosion and compatibility

What happens when it meets other materials and environments.

Corrosion and compatibility
EnvironmentConcernWhat happens
Simulated near-Earth space (proton irradiation, atomic oxygen and debris impact) on HfO2/SiO2 mirror films moderate Simulated space conditions lowered the laser damage threshold of HfO2/SiO2 films, most after debris impact.1
High temperature in air (hafnia-based thermal barrier coating) low A hafnia-based coating resists sintering better than yttria-stabilized zirconia by about 100 °C.2
Heating (crystal phase change) low Hafnia changes crystal form on heating, from monoclinic to tetragonal and then cubic.3
Strong oxidizing agents low The SDS lists strong oxidizing agents as incompatible with hafnium oxide.4
Corrosion details
#EnvironmentDetailsTest conditions
1 Simulated near-Earth space (proton irradiation, atomic oxygen and debris impact) on HfO2/SiO2 mirror films The study reports damage-threshold losses of 15.38% after proton irradiation, 13.12% after atomic oxygen and 46.80% after simulated debris penetration, and 63.19% with all three combined. film HfO2/SiO2 triple-band high-reflection film on fused silicabasis ground simulation, not an in-orbit test
2 High temperature in air (hafnia-based thermal barrier coating) The paper says sintering of YSZ coatings occurs above a surface temperature of about 1200 °C, and that the sintering resistance of its 7.5 mass% yttria-hafnia coating was improved by about 100 °C over 8 mass% yttria-zirconia. coating 7.5 mass% Y2O3 in HfO2 (7.5YSH), EB-PVD top coat about 200 µm, not pure HfO2basis thermal exposure test; the paper reports sintering behaviour at 1300 °C and 1400 °C
3 Heating (crystal phase change) The review says HfO2 is monoclinic at low temperature, changes to tetragonal on heating and to cubic at higher temperature, and that the change in crystal structure changes the band gap. form pure HfO2temperature transition temperatures not given in the review
4 Strong oxidizing agents The Praxair SDS lists strong oxidizing agents as incompatible materials, and says that heating to decomposition can give toxic fumes and gases. form powderbasis incompatibility as listed in the SDS, not a corrosion rate

Risks and side effects

Hazards to people, what happens when a cell overheats, and how the material is handled and stored.

For people

The supplier SDS sheets and the database disagree. The 2006 Praxair SDS warns of eye and skin irritation, while the 2015 Angstrom SDS and PubChem give no hazard statement.

The powder
The Praxair SDS gives the warning CAUTION! Irritating powder, with eye and skin irritation and respiratory and digestive tract irritation. The Angstrom SDS gives no signal word and an HMIS health rating of 1.
Exposure limit
The OSHA PEL and ACGIH TLV-TWA are 0.5 mg/m³ as Hf (long-term value).
Classification
PubChem reports Not Classified under GHS, with 337 of 344 company reports saying the product does not meet GHS criteria.

If it fails

These results come from supplier tests, a thermal-barrier paper and a ground simulation of space conditions. No service incidents were found in the sources opened.

Sintering
The Toshiba paper reports that its hafnia-based coating starts to sinter at 1300 °C, about 100 °C later than an 8YSZ coating.
Space conditions
In a ground simulation of proton, atomic-oxygen and debris damage, the laser damage threshold of HfO2/SiO2 films fell by 63.19% with all three factors combined.
Phase change
Heating changes the crystal form from monoclinic to tetragonal and then cubic, and the band gap changes with it.

Handling and storage

Keep it dry and sealed
Store in a cool, dry place in a tightly sealed container. Do not blow dust off clothing or skin with compressed air.
Avoid dust
Use adequate ventilation or respiratory protection, avoid inhaling the powder, and use a HEPA vacuum for spills.
Keep it apart
Keep it away from strong oxidizing agents. Heating to decomposition can give toxic fumes and gases.

Test details
The original wording and numbers from the sources, for readers who want them.

Failure risks

Failure risks
FailureTrigger and consequence
Sintering of a hafnia-based thermal barrier coatingmoderate severityLong thermal exposure at high temperature (the paper tests 1300 °C and 1400 °C)The paper reports that sintering of its 7.5YSH coating started at 1300 °C. Its sintering resistance is about 100 °C better than an 8YSZ coating, but it still sinters at high temperature.
Loss of laser damage threshold in space-like conditionsmoderate severityProton irradiation, atomic oxygen or debris impact on HfO2/SiO2 mirror films (ground simulation)The damage threshold falls by 15.38%, 13.12% and 46.80% for the single factors and by 63.19% with all three combined, in a ground simulation.
Phase change on heatinglow severityHeating to high temperatureThe crystal structure changes from monoclinic to tetragonal and then cubic, and the band gap changes with it, so optical and electrical properties can shift with temperature.

Handling and storage

  • Use only with adequate ventilation or respiratory protection, avoid inhaling the powder, and avoid contact with eyes, skin and clothing.
  • Store in a cool, dry place in a tightly sealed container, and do not blow dust off clothing or skin with compressed air.
  • The exposure limit is 0.5 mg/m3 as Hf (OSHA PEL and ACGIH TLV-TWA, long-term value).

Mitigations

  • The Praxair SDS says local exhaust is insufficient, and that mechanical ventilation is required.
  • Vacuum up spilled powder with a HEPA filter and place it in a closed container for disposal.

Supply and geography

How common the raw materials are and where they come from.

Hafnium (metal, as reported by USGS)

Crustal abundance was not found in a source opened for this profile

Critical mineral lists
US: listed
Recycling
USGS: hafnium metal recycling was minimal.
Substitutes
USGS: boron or cadmium-silver-indium alloys can substitute for hafnium metal in nuclear control rods.