Indium gallium arsenide InGaAs

spore: profile
id: indium-gallium-arsenide
spore_version: 0.2
family: semiconductor-materials
name: Indium gallium arsenide
abbreviation: InGaAs
role: photodetector
category: semiconductors
type: inp
summary: |
  Indium gallium arsenide (InGaAs) is a III-V semiconductor alloy. The Wikipedia composition In0.53Ga0.47As is lattice-matched to indium phosphide (InP), with a band gap of 0.75 eV and a lattice constant of 5.869 Å at 295 K. A 2001 NASA report describes an In(.53)Ga(.47)As/InP focal-plane array that responds from 0.9 μm to 1.7 μm at 290 K. A high-speed InGaAs photodiode module from Discovery Semiconductors spent 18 months on the International Space Station (MISSE 7, 16 November 2009 to 1 June 2011). Its 2017 conference abstract reports a -3 dB bandwidth of 16.8 GHz, but no pre-flight figure is printed in any source read for this profile.
best_for: Short-wave infrared photodiodes and fibre-optic receivers that need a response from 0.9 μm to 1.7 μm (NASA 2001 report; Wikipedia)
weakest_at: 'Space heritage is thin: the one flight result found is an 18-month ISS exposure with no published before-and-after numbers, and no radiation dose data were found'
identity:
  formula: In0.53Ga0.47As, indium gallium arsenide lattice-matched to indium phosphide (InP); general alloy notation GaxIn1-xAs
  source: wiki-ingaas
  where: Section 2 (Materials synthesis) and Section 4.1 (Properties table), composition stated for Ga0.47In0.53As; no CAS number, space group or density printed on the page
tags:
  environments:
    - low-earth-orbit
  stresses:
    - uv-exposure
    - radiation
    - thermal-cycling
  applications:
    - optics-and-cameras
    - electronics-and-chips
    - solar-arrays
properties:
  - benchmark: band_gap
    label: Band gap, In0.53Ga0.47As
    value: 0.75
    unit: eV
    scope: material
    conditions:
      composition: In0.53Ga0.47As, lattice-matched to InP
      temperature: 295 K (table heading 'Value at 295 K')
    method: Value printed in the properties table of the Wikipedia article
    status: ground
    source: wiki-ingaas
    where: Section 4.1 (Properties table), row Band Gap; repeated in Section 4.3 (Bandgap energy)
  - benchmark: lattice_constant
    label: Lattice parameter, In0.53Ga0.47As
    value: 5.869
    unit: Å
    scope: material
    conditions:
      composition: In0.53Ga0.47As, lattice-matched to InP
      temperature: 295 K (table heading 'Value at 295 K')
    method: Value printed in the properties table of the Wikipedia article
    status: ground
    source: wiki-ingaas
    where: Section 4.1 (Properties table), row Lattice Parameter
  - benchmark: electron_mobility
    label: Electron mobility, reasonably pure Ga0.47In0.53As
    value: 10000
    unit: cm2/(V·s)
    scope: material
    conditions:
      composition: Ga0.47In0.53As
      temperature: 295 K
      purity: reasonably pure, as the page says
    method: Printed as 10,000 cm2·V−1·s−1 in the properties table; the page's text says 'approaches 10×10^3'. Unit written here as cm2/(V·s) to match the form used on this site.
    status: ground
    source: wiki-ingaas
    where: Section 4.1 (Properties table), row Electron mobility; Section 4.5 (Mobility of electrons and holes)
  - benchmark: hole_mobility
    label: Hole mobility, In0.53Ga0.47As
    value: 250
    unit: cm2/(V·s)
    scope: material
    conditions:
      composition: In0.53Ga0.47As, lattice-matched to InP
      temperature: 295 K
    method: Printed as 250 cm2·V−1·s−1 in the properties table; unit written as cm2/(V·s)
    status: ground
    source: wiki-ingaas
    where: Section 4.1 (Properties table), row Hole mobility
  - benchmark: electron_effective_mass
    label: Electron effective mass, relative to free electron mass
    value: 0.041
    unit: '-'
    scope: material
    conditions:
      composition: In0.53Ga0.47As
      temperature: 295 K
      basis: m*/m0, unitless as printed
    method: Value printed in the properties table (unitless)
    status: ground
    source: wiki-ingaas
    where: Section 4.1 (Properties table), row Electron effective mass; Section 4.4 (Effective mass)
  - benchmark: cutoff_wavelength
    label: Cut-off wavelength, In0.53Ga0.47As
    value: 1.68
    unit: μm
    scope: material
    conditions:
      composition: In0.53Ga0.47As
      temperature: 295 K
      note: the page gives the absorption edge as 0.75 eV for the same composition
    method: Value printed in the Materials synthesis section; the Wikipedia figure differs slightly from the NASA 2001 figure of 1.7 μm, and both are kept
    status: ground
    source: wiki-ingaas
    where: Section 2 (Materials synthesis), first table row
  - benchmark: cte
    label: Thermal expansion coefficient, GaInAs
    value: 5.66
    unit: ppm/K
    scope: material
    conditions:
      composition: GaInAs (as the page names it)
      temperature: not stated on the page
      unit_in_source: 5.66×10−6 K−1
    method: Printed as 5.66×10−6 K−1 in the FCC lattice parameter section. 10⁻⁶ K⁻¹ is the same unit as ppm/K, so the number is copied unchanged.
    status: ground
    source: wiki-ingaas
    where: Section 4.2 (FCC lattice parameter), first bullet
  - benchmark: reverse_saturation_current_density
    label: Reverse saturation current density, InGaAs/InP photodiode
    value: 1.e-8
    bound: upper
    unit: A/cm2
    scope: cell
    conditions:
      composition: In(.53)Ga(.47)As/InP
      temperature: 290 K
      device: photodiode structure described in the abstract
    method: Upper bound printed in the abstract as 'JD < 10(exp -8) A/sq cm'
    status: ground
    source: ntrs-2001
    where: Abstract
  - benchmark: shunt_resistance_area_product
    label: Shunt resistance-area product, InGaAs/InP photodiode
    value: 1000000
    bound: lower
    unit: ohm cm2
    scope: cell
    conditions:
      composition: In(.53)Ga(.47)As/InP
      temperature: 290 K
    method: Lower bound printed in the abstract as 'RoA > 10(exp 6) omega-sq cm'
    status: ground
    source: ntrs-2001
    where: Abstract
  - benchmark: detectivity
    label: Detectivity (D*), InGaAs photodiode
    value: 100000000000000
    bound: lower
    unit: cm Hz^1/2 W^-1
    scope: cell
    conditions:
      temperature: 290 K
      basis: D* as printed in the abstract
    method: Lower bound printed in the abstract as 'greater than 10(exp 14) cm-(square root of Hz/W)'
    status: ground
    source: ntrs-2001
    where: Abstract
  - benchmark: spectral_range
    label: Spectral sensitivity range, InGaAs focal-plane array
    value: 0.9
    value_high: 1.7
    bound: range
    unit: μm
    scope: cell
    conditions:
      composition: In(.53)Ga(.47)As/InP
      temperature: not stated in the abstract
      note: the short-wave cut-on is attributed in the abstract to absorption in the InP substrate
    method: Range printed in the abstract
    status: ground
    source: ntrs-2001
    where: Abstract
  - benchmark: quantum_efficiency
    label: Quantum efficiency at 0.5 μm
    value: 15
    bound: lower
    unit: '%'
    scope: cell
    conditions:
      wavelength: 0.5 μm
      composition: InGaAs focal-plane array described in the abstract
      temperature: not stated in the abstract
    method: Lower bound printed in the abstract as 'greater than 15% quantum efficiency at 0.5 micrometers'
    status: ground
    source: ntrs-2001
    where: Abstract
  - benchmark: bandwidth_3db
    label: '-3 dB bandwidth, InGaAs photodiode module flown on the ISS'
    value: 16.8
    unit: GHz
    scope: cell
    conditions:
      device: high-speed InGaAs photodiode module flown on the ISS (MISSE 7)
      measurement: '-3 dB bandwidth as printed in the abstract'
    method: Value printed in the 2017 conference abstract. The abstract gives no pre-flight value to compare with; the post-flight test is shown in its Fig. 1a, which gives no numbers in the text.
    status: flight
    source: ntrs-2017
    where: Abstract
  - benchmark: temperature_cycling_range
    label: Temperature cycling range in orbit, InGaAs photodiode module
    value: -157
    value_high: 121
    bound: range
    unit: degC
    scope: cell
    conditions:
      device: high-speed InGaAs photodiode module on the ISS
      cycling_frequency: 16 times a day
    method: Range printed in the 2017 conference abstract
    status: flight
    source: ntrs-2017
    where: Abstract
  - benchmark: flight_duration
    label: Time on the ISS, InGaAs photodiode module (MISSE 7)
    value: 18
    unit: months
    scope: cell
    conditions:
      launch: 16 November 2009
      return: 1 June 2011
      mission: MISSE 7
    method: Duration printed in the 2017 conference abstract and in the 2012 article; the article gives launch and return dates
    status: flight
    source: ntrs-2017
    where: Abstract; article body (laserfocusworld, 2012)
  - benchmark: bandwidth_3db
    label: Bandwidth up to, DSC-R212 2.2 μm SWIR InGaAs receiver
    value: 18
    bound: upper
    unit: GHz
    scope: cell
    conditions:
      product: DSC-R212, 2.2 Micron SWIR InGaAs Linear AGC Balanced Optical Receiver
      wavelength: 2.2 μm
    method: Bandwidth printed in the product title on the manufacturer's featured-products list
    status: ground
    source: discovery-products
    where: 'Featured Products: 2 Micron InGaAs Photodiodes & Photoreceivers, DSC-R212 entry'
  - benchmark: bandwidth_3db
    label: Bandwidth up to, DSC2-100S 2.2 μm InGaAs photodiode
    value: 5
    bound: upper
    unit: GHz
    scope: cell
    conditions:
      product: DSC2-100S, 2.2 Micron Wavelength InGaAs Photodiode
      wavelength: 2.2 μm
    method: Bandwidth printed in the product title on the manufacturer's featured-products list (printed as 'up to 5 Ghz')
    status: ground
    source: discovery-products
    where: 'Featured Products: 2 Micron InGaAs Photodiodes & Photoreceivers, DSC2-100S entry'
corrosion:
  - environment: Low Earth orbit on the ISS (MISSE 7 external exposure), with UV, radiation and thermal cycling
    headline: The company says its InGaAs photodiodes looked intact after 18 months in orbit, but no numbers were published.
    effect: The CEO of Discovery Semiconductors said preliminary analysis showed the photodiodes intact under UV, radiation and thermal cycling. The article gives no before-and-after measurement, and the electro-optical characteristics were still to be studied after the article was written.
    rating: low
    conditions:
      exposure: 18 months on the ISS, launched 16 November 2009, returned 1 June 2011
      basis: qualitative statement by the company's CEO, no measured values; rating is assigned from that wording
    source: lfw-2012
    where: Article body (CEO statement after the return of the modules)
risks:
  hazards:
    - text: Wikipedia's safety section gives rodent exposure levels from National Toxicology Program studies of InP and GaAs (rats 0.01, 0.1 or 1.0 mg/m3; mice 0.1, 0.5 or 1.0 mg/m3). It does not print a GHS hazard class or a supplier safety data sheet for InGaAs itself, so no hazard statement is recorded here.
      ghs: []
      source: wiki-ingaas
      where: Section 6 (Safety and toxicity)
  failure_risks: []
  side_effects: []
  handling: []
  mitigations: []
uses:
  - application: optics-and-cameras
    device: Short-wave infrared focal-plane array for low light level imaging
    example: NASA's 2001 report describes an In(.53)Ga(.47)As/InP visible/SWIR focal-plane array sensitive from 0.9 μm to 1.7 μm for low light level imaging.
    source: ntrs-2001
    where: Abstract
  - application: optics-and-cameras
    device: High-speed photodiode module on the ISS (MISSE 7)
    example: A high-speed InGaAs photodiode module completed 18 months on the ISS, launched 16 November 2009 and returned 1 June 2011, per the 2017 conference paper.
    source: ntrs-2017
    where: Abstract
  - application: optics-and-cameras
    device: Fibre-optic telecommunications photodetector
    example: Wikipedia describes InGaAs photodiodes as the principal use of the alloy, as fast and sensitive detectors for fibre-optic telecommunications.
    source: wiki-ingaas
    where: Main applications list (Photodetectors) in the article text
  - application: solar-arrays
    device: Triple-junction solar cells and thermophotovoltaic power generation
    example: Wikipedia lists triple-junction solar cells and thermophotovoltaic power generation among the photovoltaic uses of InGaAs.
    source: wiki-ingaas
    where: Main applications list (Photovoltaics) in the article text
  - application: electronics-and-chips
    device: High-electron-mobility transistors (HEMTs) with InGaAs channels
    example: Wikipedia lists HEMTs with InGaAs channels among the transistor uses of the alloy.
    source: wiki-ingaas
    where: Main applications list (Transistors) in the article text
supply:
  - subject: Indium
    producers:
      - country: China
        share_percent: 70
        year: 2025
    critical_lists:
      - list: USGS 2025 List of Critical Minerals (indium listed for flat-panel displays and touchscreens)
        listed: true
      - list: EU critical raw materials list (Regulation (EU) 2024/1252, as shown on the European Commission page)
        listed: false
    recycling: 'USGS: indium is most commonly recovered from ITO scrap in Japan and the Republic of Korea. Data on the quantity recovered were not available.'
    substitutes:
      - 'USGS: substitutes for ITO coatings include antimony tin oxide, carbon nanotubes, PEDOT and silver nanowires (these are display and touch-screen uses, not InGaAs).'
    source: usgs-indium
    where: Events, Trends and Issues (China accounted for 70% of the world total); World Refinery Production table, 2025e; Recycling; Substitutes
  - subject: Gallium
    producers:
      - country: China
        share_percent: 99
        year: 2025
    critical_lists:
      - list: USGS 2025 List of Critical Minerals (gallium listed for semiconductors)
        listed: true
      - list: EU critical raw materials list (Regulation (EU) 2024/1252, as shown on the European Commission page)
        listed: true
    recycling: 'USGS: old scrap is not recovered. New scrap from GaAs device manufacture is reprocessed to recover high-purity gallium at one facility in New York.'
    substitutes: []
    source: usgs-gallium
    where: Events, Trends and Issues (China accounted for 99% of worldwide primary low-purity gallium production; the text does not date this share more finely than the 2026 chapter); Recycling
media: []
documents:
  - title: 'Wikipedia: Indium gallium arsenide (article text, fetched 2026-11-01)'
    type: database
    url: https://en.wikipedia.org/wiki/Indium_gallium_arsenide
    year: 2026
  - title: An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging (NASA NTRS 20010072609)
    type: report
    url: https://ntrs.nasa.gov/citations/20010072609
    year: 2001
  - title: Successful Space Flight of High-Speed InGaAs Photodiode Onboard the International Space Station (NASA NTRS 20170007487)
    type: paper
    url: https://ntrs.nasa.gov/citations/20170007487
    year: 2017
  - title: Discovery Semiconductors InGaAs photodiode modules return to Earth after 18 months on the ISS (Laser Focus World, 23 May 2012)
    type: report
    url: https://www.laserfocusworld.com/test-measurement/research/article/16565684/discovery-semiconductors-ingaas-photodiode-modules-return-to-earth-after-18-months-on-the-iss
    year: 2012
  - title: Discovery Semiconductors featured products, 2 Micron InGaAs photodiodes and photoreceivers
    type: datasheet
    url: https://www.discoverysemi.com/
    year: 2026
  - title: Mineral Commodity Summaries 2026, Indium
    type: report
    url: https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-indium.pdf
    year: 2026
  - title: Mineral Commodity Summaries 2026, Gallium
    type: report
    url: https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-gallium.pdf
    year: 2026
gaps:
  - 'Pre-flight versus post-flight performance is not stated in any source read. The brief''s ''no performance change'' claim for the ISS module is not confirmed: the 2017 abstract prints only the 16.8 GHz bandwidth, and the 2012 article gives no numbers and says post-flight tests had only just started.'
  - Atomic weights of indium, gallium and arsenic were not read in this run, so they are not entered in story.recipe.
  - No CAS number, EC number, space group, crystal system, UNS, EN or other designation for InGaAs appears in any source read; none entered.
  - Density, melting point, thermal conductivity, refractive index and dielectric constant are not printed on the Wikipedia page, and no other source read gives them. Not found in any source we hold.
  - Band gap, lattice constant, electron and hole mobility, electron effective mass, cut-off wavelength, detector figures and ISS duration are not canonical names in spores/property-canon.yaml. They are entered under snake_case names (band_gap, lattice_constant, electron_mobility, hole_mobility, electron_effective_mass, cutoff_wavelength, reverse_saturation_current_density, shunt_resistance_area_product, detectivity, spectral_range, quantum_efficiency, bandwidth_3db, temperature_cycling_range, flight_duration).
  - 'Two cut-off wavelengths for the same alloy: 1.68 μm in the Wikipedia Materials synthesis section (at 295 K) and 1.7 μm long-wavelength cut-off in the 2001 NASA abstract (at 290 K, for the focal-plane array). Both are kept as printed.'
  - Section 4.5 of the Wikipedia page prints 250 cm2/s as a room-temperature electron diffusion constant. The same number is the hole mobility in its table, so the diffusion value is not entered.
  - 'Corrosion and ageing: no measured degradation data for InGaAs in vacuum, UV, radiation or thermal cycling were found. The only exposure statement is qualitative (company CEO, 2012 article).'
  - 'Failure modes, handling and mitigations: no sourced entries. No GHS classification or supplier safety data sheet for InGaAs was read; Wikipedia gives rodent exposure levels, not a hazard class.'
  - 'Supply: no production or refinery data for arsenic were read, so arsenic is not entered in supply. Arsenic is on the USGS 2025 and EU critical lists (confirmed on the USGS and European Commission pages), with no producer shares.'
  - Radiation dose, vacuum and thermal-vacuum results beyond the one ISS flight were not found in any source read. No second flight or ground-test source with numbers was found.
sources:
  wiki-ingaas:
    title: Indium gallium arsenide (Wikipedia article)
    id: Wikipedia, article text (no infobox captured)
    url: https://en.wikipedia.org/wiki/Indium_gallium_arsenide
    year: 2026
    kind: web
    license: CC BY-SA 4.0 (Wikipedia; cited, not reproduced)
  ntrs-2001:
    title: An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging
    id: NASA NTRS 20010072609; report AD-A390252; authors Cohen, Ettenberg, Lange, Olsen
    url: https://ntrs.nasa.gov/citations/20010072609
    year: 2001
    kind: report
    license: public domain (NASA)
  ntrs-2017:
    title: Successful Space Flight of High-Speed InGaAs Photodiode Onboard the International Space Station
    id: NASA NTRS 20170007487; NF1676L-27581; authors Joshi (Discovery Semiconductors), Prasad (NASA Langley), Datta (Discovery Semiconductors)
    url: https://ntrs.nasa.gov/citations/20170007487
    year: 2017
    kind: paper
    license: public domain (NASA)
  lfw-2012:
    title: Discovery Semiconductors InGaAs photodiode modules return to Earth after 18 months on the ISS
    id: Laser Focus World, 23 May 2012
    url: https://www.laserfocusworld.com/test-measurement/research/article/16565684/discovery-semiconductors-ingaas-photodiode-modules-return-to-earth-after-18-months-on-the-iss
    year: 2012
    kind: web
    license: publisher article, cited not reproduced
  discovery-products:
    title: 'Discovery Semiconductors, featured products: 2 Micron InGaAs Photodiodes and Photoreceivers'
    id: Discovery Semiconductors featured products page
    url: https://www.discoverysemi.com/
    year: 2026
    kind: datasheet
    license: manufacturer web page, cited not reproduced
  usgs-indium:
    title: Mineral Commodity Summaries 2026, Indium
    id: USGS MCS 2026, February 2026
    url: https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-indium.pdf
    year: 2026
    kind: report
    license: public domain (USGS)
  usgs-gallium:
    title: Mineral Commodity Summaries 2026, Gallium
    id: USGS MCS 2026, February 2026
    url: https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-gallium.pdf
    year: 2026
    kind: report
    license: public domain (USGS)
  usgs-crit2025:
    title: About the 2025 List of Critical Minerals (USGS, 60 minerals)
    id: USGS, final 2025 List of Critical Minerals
    url: https://www.usgs.gov/programs/mineral-resources-program/science/about-2025-list-critical-minerals
    year: 2025
    kind: web
    license: public domain (USGS)
  ec-crm:
    title: Critical raw materials (European Commission, list under Regulation (EU) 2024/1252)
    id: Regulation (EU) 2024/1252
    url: https://single-market-economy.ec.europa.eu/sectors/raw-materials/areas-specific-interest/critical-raw-materials_en
    year: 2024
    kind: web
    license: European Commission web page
license: CC-BY-4.0
updated: '2026-11-01'
review:
  status: draft
  method: assistant
  checked_values: 17
  unreachable: 0
  caveats: 2
  note: Written by an AI assistant on 2026-11-01 from pages fetched in this run. The web search budget for this turn was used up, so the source set is smaller than the brief's target. Not re-read by a second check.
story:
  recipe:
    line: In0.53Ga0.47As is a ternary alloy of indium, gallium and arsenic. Per the Wikipedia composition, indium and gallium share the group III sites in the ratio 0.53 to 0.47, and each formula unit has one arsenic atom. The composition is lattice-matched to indium phosphide (InP).
    parts:
      - name: Indium
        symbol: In
        share: 0.53
        role: Group III element; the 0.53 share is the indium fraction in the lattice-matched composition the page uses.
      - name: Gallium
        symbol: Ga
        share: 0.47
        role: Group III element; the 0.47 share is the gallium fraction in the same composition.
      - name: Arsenic
        symbol: As
        role: Group V element; the alloy notation GaxIn1-xAs has one arsenic atom per formula unit.
  risk_groups:
    - title: For people
      level: 0
      verdict: No GHS hazard class found for InGaAs
      lead: No supplier safety data sheet or GHS classification for InGaAs was read. The one toxicity source is a set of rodent exposure levels from studies of InP and GaAs.
      points:
        - label: Exposure studies
          line: Wikipedia gives the National Toxicology Program rodent exposure levels for InP and GaAs (rats 0.01, 0.1 or 1.0 mg/m3; mice 0.1, 0.5 or 1.0 mg/m3). These are study design values, not hazard classes.
        - label: Dust
          line: No dust or inhalation hazard statement for InGaAs was found in the sources read.
    - title: In orbit
      lead: The only flight result found is one 18-month exposure of a photodiode module on the ISS.
      points:
        - label: Flight
          line: A high-speed InGaAs photodiode module was on the ISS for 18 months, launched on 16 November 2009 and returned on 1 June 2011 (MISSE 7).
        - label: Thermal cycling
          line: The module was cycled between -157 and +121 degC, 16 times a day, according to the 2017 conference abstract.
        - label: Result
          line: The company's CEO said preliminary analysis showed the photodiodes intact after UV, radiation and thermal cycling. The article prints no numbers for that result.
  why: Indium gallium arsenide (InGaAs) is a semiconductor alloy used mainly as a photodetector for short-wave infrared light. The composition In0.53Ga0.47As is lattice-matched to indium phosphide (InP), so it can be grown on InP substrates with little strain. It has a band gap of 0.75 eV at 295 K and a cut-off wavelength of 1.68 μm at 295 K, per Wikipedia, and a NASA 2001 report gives a 1.7 μm long-wavelength cut-off for its focal-plane array. The NASA 2001 abstract gives its spectral sensitivity range as 0.9 μm to 1.7 μm at 290 K.
  uses:
    - where: Fibre-optic telecommunications
      line: Wikipedia describes InGaAs photodiodes as the principal use of the alloy, as fast and sensitive photodetectors for fibre-optic telecommunications. The 2026 USGS indium chapter notes that indium phosphide substrates are used in high-speed photodetectors and laser diodes for optical communications.
    - where: Imaging in low light
      line: A 2001 NASA report describes an InGaAs visible/SWIR focal-plane array for low light level imaging, sensitive from 0.9 μm to 1.7 μm at 290 K.
    - where: On the International Space Station
      line: A high-speed InGaAs photodiode module spent 18 months on the ISS as part of MISSE 7. The 2017 paper reports a -3 dB bandwidth of 16.8 GHz for the module.
  can_do:
    - label: Band gap
      benchmark: band_gap
      line: In0.53Ga0.47As has a band gap of 0.75 eV at 295 K, per the Wikipedia properties table. The same page gives the absorption edge at the same composition as 0.75 eV.
    - label: Response range
      benchmark: spectral_range
      line: The NASA 2001 abstract gives a spectral sensitivity range of 0.9 μm to 1.7 μm at 290 K for an InGaAs/InP focal-plane array. The Wikipedia page gives a cut-off wavelength of 1.68 μm at 295 K for the same alloy.
    - label: Bandwidth
      benchmark: bandwidth_3db
      line: A 2017 conference abstract reports a -3 dB bandwidth of 16.8 GHz for the InGaAs photodiode module flown on the ISS. A Discovery Semiconductors receiver lists a bandwidth up to 18 GHz at 2.2 μm, per its product title.
    - label: Electron transport
      benchmark: electron_mobility
      line: The electron mobility of reasonably pure Ga0.47In0.53As is printed as 10,000 cm2/(V·s) at 295 K. The hole mobility in the same table is 250 cm2/(V·s) at 295 K.
  compare: InGaAs is a short-wave infrared detector material, with a cut-off of 1.68 μm at 295 K (Wikipedia) and 1.7 μm (NASA 2001 abstract). The sources read for this profile give its band gap, mobility and cut-off values, but no figures for other materials, so no ranking against them is claimed here. The table below lists the three benchmarks to compare.
  compare_rows:
    - label: Band gap
      benchmark: band_gap
    - label: Electron mobility
      benchmark: electron_mobility
    - label: Short-wave cut-off
      benchmark: cutoff_wavelength
  handling:
    - No handling or storage guidance for InGaAs was found in the sources read. Follow the supplier's safety data sheet for any wafer or module you handle.
    - Wikipedia's exposure levels are study values for rodents, not safe limits for people.
  good_for:
    - Short-wave infrared detection from 0.9 μm to 1.7 μm, per the NASA 2001 abstract.
    - Fibre-optic telecommunications photodetectors, the main use the Wikipedia page names for the alloy.
  watch_out:
    - Flight heritage is one 18-month ISS exposure with no published pre-flight comparison.
    - The two cut-off figures differ slightly (1.68 μm and 1.7 μm), so quote the source and condition with each value.
    - No radiation dose, vacuum or thermal-vacuum data were found beyond that one flight.
  verdict: InGaAs is a well-documented short-wave infrared detector material with a flight result on the ISS, but the sources read give no before-and-after numbers for that flight.