Bismuth telluride (with antimony telluride) Bi2Te3, Sb2Te3

Bi2Te3 · CAS 1304-82-1

Bismuth telluride (Bi2Te3) is a grey layered semiconductor and the base of the room-temperature thermoelectric alloys used in solid-state coolers and generators.

11 sources · Updated 2026-10-26 · CC BY 4.0

Evidence level

2 of 5

Lab-measured

Room-temperature zT

1.24 (p-type, before storage)

Bulk band gap

about 150 meV

Module leg size

100 to 200 micrometres

Projected pumping

more than 200 W/cm2

Recipe, share of the weight

  • Bi 40%Bismuth
  • Te 60%Tellurium

Best for

Room-temperature thermoelectric coolers and generators, where the p-type alloy reached zT 1.24 before storage

Weakest at

Humid, hot storage: 600 h at 85 degC and 85% RH oxidised the surface and cut zT by 19 and 22 percent (authors)

Risk at a glance

  • People Low. Harmful if swallowed or inhaled (SDS)
  • If it fails High. Explosive reaction with chlorates and perchlorates
  • Corrosion Severe. Surface oxidised to bismuth oxide and tellurium oxide; zT fell by about a fifth.

Quick facts: Bi2Te3, Sb2Te3

Key properties of Bi2Te3, Sb2Te3
PropertyValueBasis
Density6.5 to 7.64 g/cm³3 sourced values across conditions
Thermal conductivity1.29 to 1.48 W/(m·K)4 sourced values across conditions
Melting point573 to 629 °C3 sourced values across conditions

What is the density of Bismuth telluride?

Bismuth telluride has a density of 6.5 to 7.64 g/cm³. The range covers 3 sourced values across the tempers, forms and test conditions the sources report; room-temperature values are used where a source states a temperature.

What is the thermal conductivity of Bismuth telluride?

Bismuth telluride has a thermal conductivity of 1.29 to 1.48 W/(m·K). The range covers 4 sourced values across the tempers, forms and test conditions the sources report; room-temperature values are used where a source states a temperature.

What is the melting point of Bismuth telluride?

Bismuth telluride has a melting point of 573 to 629 °C. The range covers 3 sourced values across the tempers, forms and test conditions the sources report; room-temperature values are used where a source states a temperature.

What is Bismuth telluride used for?

Uses recorded in the sources include Bi2Te3-based thermoelectric modules for cooling and energy generation; Thick-film thermoelectric microcoolers electrodeposited on diamond substrates (projected).

Why it exists

Bismuth telluride is a layered narrow-gap semiconductor. Bi2Te3-based alloys are the working material of room-temperature thermoelectric coolers and generators, and they reached zT of 1.24 for p-type material before storage (Xiao et al., 2023). Its surface also hosts a single Dirac cone and is classed as a topological insulator (Hsieh et al., arXiv 2009). The same layered family includes antimony telluride, which has its own supplier SDS for density and melting point. Hot, humid storage is the main ageing risk, so the material is used sealed.

Where it's used

Thermoelectric cooling and power

USGS says Bi2Te3 is used in thermoelectric devices for cooling and energy generation, and that thermoelectric devices took an estimated 15 percent of global tellurium end use in 2025.

Micro-coolers for electronics (projected)

NASA JPL proposed thick-film Bi2Te3 microcoolers, electrodeposited on diamond substrates, with thousands of thermocouples, projected to pump more than 200 W/cm2 over 30 to 60 K. The 2000 record is a development report.

Recipe

Bi2Te3

Bismuth telluride is a compound of bismuth and tellurium in a 2 to 3 ratio, Bi2Te3 (Wikipedia, composition). Thermoelectric material is an alloy of it with antimony or selenium: the 2023 commercial samples were n-type Bi2Se0.21Te2.79 and p-type Bi0.4Sb1.6Te3. Thin films can be electrodeposited from a dichloromethane solution with a short nucleation pulse (Cicvaric et al., 2020), and thick films of Bi2Te3 and its solid solutions by electrochemical deposition for microcoolers (Fleurial, NASA NTRS, 2000). Antimony telluride, Sb2Te3, is the companion compound with two antimony and three tellurium in the formula (Wikipedia, composition).

What Bi2Te3, Sb2Te3 is made of
IngredientShare of the weightWhat it does
Bismuth Bi 40% Two of the five positions in the Bi2Te3 formula (share of the formula). Bismuth is also the main element in the n-type and p-type alloys.
Tellurium Te 60% Three of the five positions in the Bi2Te3 formula (share of the formula). Tellurium makes up the layered framework that gives the material its cleavage.

Weight shares are as printed in the sources.

What it can do

Room-temperature zT

1.24 (p-type, before storage)

measured

The p-type Bi0.4Sb1.6Te3 alloy reached zT 1.24 at room temperature before storage, and 0.97 after 600 h at 85 degC and 85% RH (Xiao et al., 2023).

Bulk band gap

about 150 meV

measured

Bi2Te3 is an indirect semiconductor with a bulk gap of about 150 meV, and its surface carries a single Dirac cone (Hsieh et al., arXiv 2009).

Module leg size

100 to 200 micrometres

measured

Conventional Bi2Te3-alloy modules are limited by a minimum leg thickness of 100 to 200 micrometres and by 100 to 200 legs (Fleurial, NASA NTRS 2000).

Projected pumping

more than 200 W/cm2

A thick-film microcooler is projected to pump more than 200 W/cm2 over a 30 to 60 K difference. This is a design target, not a measured result (Fleurial, NASA NTRS 2000).

How it compares

Bismuth telluride is denser than antimony telluride in the SDS copies read: 7.642 g/cm3 against 6.5 g/cm3. Its melting point is lower, 573 degC against 629 degC. Among the Bi2Te3-based alloys tested before storage, the p-type Bi0.4Sb1.6Te3 has the higher zT (1.24 against 0.97 for the n-type Bi2Se0.21Te2.79), and it keeps more zT after 600 h at 85 degC and 85% RH (0.97 against 0.79). The sources read here give no thermoelectric figures for pure Sb2Te3.

The same measurements for each material, so you can compare them. Each row names the key condition under the value; the full conditions and methods are in the numbered notes under Technical details. Compare every grade in the family.

Benchmarks
MeasurementBi2Te3, Sb2Te3
Thermal behavior and safety
Melting point of bismuth telluride (supplier SDS)Value printed in the supplier SDS, Section 9573 °C2
Melting point of bismuth telluride (second supplier SDS)573 °C3
Melting point of antimony telluride (supplier SDS, 2012)629 °C5
Thermal conductivity, n-type Bi2Se0.21Te2.79, before storage1.4 W/(m·K)6
Thermal conductivity, n-type Bi2Se0.21Te2.79, after 600 h at 85 degC and 85% RH1.48 W/(m·K)7
Thermal conductivity, p-type Bi0.4Sb1.6Te3, before storage1.31 W/(m·K)8
Thermal conductivity, p-type Bi0.4Sb1.6Te3, after 600 h at 85 degC and 85% RH1.29 W/(m·K)9
Physical and electrical
Density of bismuth telluride powder at 20 degC (supplier SDS)Value printed in the supplier SDS, Section 97.642 g/cm³
Density of bismuth telluride (second supplier SDS)7.642 g/cc1
Density of antimony telluride (supplier SDS, 2012)6.5 g/cm³4
Electrical conductivity, n-type Bi2Se0.21Te2.79, before storage9.45 10^4 S/m14
Electrical conductivity, n-type Bi2Se0.21Te2.79, after 600 h at 85 degC and 85% RH7.79 10^4 S/m15
Minimum leg thickness of conventional Bi2Te3 alloy modules100 to 200 μm20
Other measurements
Thermoelectric figure of merit zT, n-type Bi2Se0.21Te2.79, before storage0.97 -10
Thermoelectric figure of merit zT, n-type Bi2Se0.21Te2.79, after 600 h at 85 degC and 85% RH0.79 -11
Thermoelectric figure of merit zT, p-type Bi0.4Sb1.6Te3, before storage1.24 -12
Thermoelectric figure of merit zT, p-type Bi0.4Sb1.6Te3, after 600 h at 85 degC and 85% RH0.97 -13
Seebeck coefficient, p-type Bi0.4Sb1.6Te3, before storage243 μV/K16
Seebeck coefficient, p-type Bi0.4Sb1.6Te3, after 600 h at 85 degC and 85% RH220 μV/K17
Bulk indirect band gap of Bi2Te3 (spin-orbit induced)150 meV18
Seebeck coefficient, electrodeposited Bi2Te3 thin film at room temperature51.7 μV/K19

Why choose it, and why not

Good for

  • Room-temperature thermoelectric coolers and generators. The p-type alloy reached zT 1.24 before storage (Xiao et al., 2023).
  • Micro-coolers in development. NASA JPL projected more than 200 W/cm2 pumping from thick films (NASA NTRS 2000).

Watch out for

  • Humid heat: 600 h at 85 degC and 85% RH cut zT by 19 and 22 percent and oxidised the surface.
  • Supply: China produced 88 percent of bismuth and 80 percent of refined tellurium in 2025 (USGS).
  • Antimony telluride: moderately explosive in contact with chlorates and perchlorates, per its SDS.

Bi2Te3 is the established room-temperature thermoelectric base material, with zT near 1 for commercial alloys. Its weak points are humid heat and a supply chain concentrated in China. The file has 22 sourced values and two supplier SDS copies that disagree on hazard classes. Pure-compound thermoelectric data and the Sb2Te3 band gap are not sourced here.

Technical details

For scientists and researchers. Everything above comes from the record below: every number with its method, its conditions and its source.

Cell-level benchmarks

Values for finished cells. These vary by manufacturer, so read the conditions in the notes. Compare every grade in the family.

Cell-level benchmarks
MeasurementBi2Te3, Sb2Te3
Thermal behavior and safety
Projected heat pumping of a thick-film Bi2Te3 microcooler> 200 W/cm²21

Notes

The method, full conditions and any caveat for the numbered rows above.

Notes for the numbered rows
#MeasurementMethodConditionsCaveat
1Density of bismuth telluride (second supplier SDS)Value printed in the Angstrom Sciences SDS, physical properties tablematerial bismuth telluride, Angstrom Sciences producttemperature not stated in the copy read—
2Melting point of bismuth telluride (supplier SDS)—material bismuth telluride powder, Bi2Te3basis single value printed as melting point or rangeThe Wikipedia infobox gives 580 degC, but Wikipedia is not used for property values in this profile.
3Melting point of bismuth telluride (second supplier SDS)Value printed in the Angstrom Sciences SDS, physical properties tablematerial bismuth telluride, Angstrom Sciences product—
4Density of antimony telluride (supplier SDS, 2012)Value printed in the Stanford Advanced Materials MSDS, Section IIImaterial antimony telluride, Sb2Te3, grey powder and pieces—
5Melting point of antimony telluride (supplier SDS, 2012)Value printed in the Stanford Advanced Materials MSDS, Section III (printed as 629.00 C)material antimony telluride, Sb2Te3Wikipedia gives 620 degC for Sb2Te3 and is not used here. The SDS revision date is 2012.
6Thermal conductivity, n-type Bi2Se0.21Te2.79, before storageValue printed in Table 1 (room-temperature thermoelectric performance)material commercial n-type Bi2Se0.21Te2.79storage 0 h, as receivedtemperature room temperature—
7Thermal conductivity, n-type Bi2Se0.21Te2.79, after 600 h at 85 degC and 85% RHValue printed in Table 1 (room-temperature thermoelectric performance)material commercial n-type Bi2Se0.21Te2.79storage 600 h at 85 °C, 85% RHtemperature room temperature—
8Thermal conductivity, p-type Bi0.4Sb1.6Te3, before storageValue printed in Table 1 (room-temperature thermoelectric performance)material commercial p-type Bi0.4Sb1.6Te3storage 0 h, as receivedtemperature room temperature—
9Thermal conductivity, p-type Bi0.4Sb1.6Te3, after 600 h at 85 degC and 85% RHValue printed in Table 1 (room-temperature thermoelectric performance)material commercial p-type Bi0.4Sb1.6Te3storage 600 h at 85 °C, 85% RHtemperature room temperature—
10Thermoelectric figure of merit zT, n-type Bi2Se0.21Te2.79, before storageValue printed in Table 1 and in the English abstractmaterial commercial n-type Bi2Se0.21Te2.79storage 0 htemperature room temperature—
11Thermoelectric figure of merit zT, n-type Bi2Se0.21Te2.79, after 600 h at 85 degC and 85% RHValue printed in Table 1 and in the English abstractmaterial commercial n-type Bi2Se0.21Te2.79storage 600 h at 85 °C, 85% RHtemperature room temperature—
12Thermoelectric figure of merit zT, p-type Bi0.4Sb1.6Te3, before storageValue printed in Table 1 and in the English abstractmaterial commercial p-type Bi0.4Sb1.6Te3storage 0 htemperature room temperature—
13Thermoelectric figure of merit zT, p-type Bi0.4Sb1.6Te3, after 600 h at 85 degC and 85% RHValue printed in Table 1 and in the English abstractmaterial commercial p-type Bi0.4Sb1.6Te3storage 600 h at 85 °C, 85% RHtemperature room temperature—
14Electrical conductivity, n-type Bi2Se0.21Te2.79, before storageValue printed in Table 1; the unit is kept as printed, with the x10^4 factor in the unitmaterial commercial n-type Bi2Se0.21Te2.79storage 0 htemperature room temperatureunit in source printed as 9.45 x 10^4 S m-1 (Table 1 header: x10^4, S m-1)—
15Electrical conductivity, n-type Bi2Se0.21Te2.79, after 600 h at 85 degC and 85% RHValue printed in Table 1; the unit is kept as printed, with the x10^4 factor in the unitmaterial commercial n-type Bi2Se0.21Te2.79storage 600 h at 85 °C, 85% RHtemperature room temperatureunit in source printed as 7.79 x 10^4 S m-1—
16Seebeck coefficient, p-type Bi0.4Sb1.6Te3, before storageValue printed in Table 1 and in the English abstractmaterial commercial p-type Bi0.4Sb1.6Te3storage 0 htemperature room temperature—
17Seebeck coefficient, p-type Bi0.4Sb1.6Te3, after 600 h at 85 degC and 85% RHValue printed in Table 1 and in the English abstractmaterial commercial p-type Bi0.4Sb1.6Te3storage 600 h at 85 °C, 85% RHtemperature room temperature—
18Bulk indirect band gap of Bi2Te3 (spin-orbit induced)Value printed in the abstract (delta approximately 150 meV, printed with a tilde)material Bi2Te3 single crystaltype indirect bulk gapbasis photoemission and first-principles calculations—
19Seebeck coefficient, electrodeposited Bi2Te3 thin film at room temperatureValue printed in the abstract (room-temperature coefficient)material electrodeposited Bi2Te3 thin film from dichloromethane, transferred to an insulating layertemperature room temperature (300 K in the Results)sign printed as negative (n-type); the magnitude is stored here—
20Minimum leg thickness of conventional Bi2Te3 alloy modulesRange printed in the abstract (the scan prints the unit as an OCR form of micrometre)device conventional Bi2Te3-alloy thermoelectric modulebasis limit set by mechanical and manufacturing constraints—
21Projected heat pumping of a thick-film Bi2Te3 microcoolerProjection printed in the abstract (more than 200 W/cm2); not a measured resultdevice projected thick-film microcooler with thousands of thermocouples on diamond substratetemperature difference 30 to 60 KThe paper says this is anticipated for a device still in development. It is a design target, not a measured value.

Corrosion and compatibility

What happens when it meets other materials and environments.

Corrosion and compatibility
EnvironmentConcernWhat happens
Hot humid storage (85 degC, 85% RH, 600 h) severe Surface oxidised to bismuth oxide and tellurium oxide; zT fell by about a fifth.1
Air, porous electrodeposited films moderate Porous films oxidise significantly; smooth films and tellurium-terminated surfaces resist it.2
Corrosion details
#EnvironmentDetailsTest conditions
1 Hot humid storage (85 degC, 85% RH, 600 h) Commercial n-type Bi2Se0.21Te2.79 and p-type Bi0.4Sb1.6Te3 stored 600 h at 85 degC and 85% RH formed Bi2O3 and TeO2 (the p-type also Sb2O3), with nanoscale holes and microcracks in the surface. The authors report zT falling from 0.97 to 0.79 (n-type) and from 1.24 to 0.97 (p-type), and they conclude that devices need strict encapsulation. temperature 85 °Chumidity 85% RHtime 600 hmaterial commercial Bi2Te3-based alloys, not pure Bi2Te3
2 Air, porous electrodeposited films Porous electrodeposited Bi2Te3 films oxidised significantly and their thermoelectric properties degraded. Smoother films with a smaller surface-to-volume ratio oxidised less, and films with a Te(O) surface termination showed no oxygen below the surface layer (XPS). The paper says that MBE-grown films are stable and surface oxidation takes months. environment air storageexposure time not stated for the porous filmsfilm electrodeposited from dichloromethane

Risks and side effects

Hazards to people, what happens when a cell overheats, and how the material is handled and stored.

For people

The supplier SDS classes bismuth telluride as harmful and irritant. Two copies disagree on the signal word.

Acute hazard
H302+H312+H332 (harmful if swallowed, in contact with skin or inhaled); H315 and H319 irritant; H335 may irritate the airways.
Dust
The SDS quotes US limits of 15 mg/m3 total dust and 5 mg/m3 respirable dust for undoped material. Avoid dust.
Antimony telluride
The SDS for Sb2Te3 quotes 0.1 mg(Te)/m3 for OSHA and ACGIH, and says most antimony compounds are poisonous.

If it fails

The two failure routes in the sources are humid heat and contact with chlorates and perchlorates.

Humidity
600 h at 85 degC and 85% RH oxidised the surface, and zT fell by about a fifth (Xiao et al., 2023).
Chemical
Antimony telluride is moderately explosive by chemical reaction with chlorates and perchlorates, per its SDS.
Supply
China produced 88 percent of bismuth and 80 percent of refined tellurium in 2025 (USGS).

Handling

The SDS calls bismuth telluride moisture sensitive.

Storage
Store dry, in closed containers, under dry inert gas, away from acids, oxidising agents and water (SDS Section 7).
Encapsulation
The authors conclude that the modules need strict encapsulation against humidity.

Test details
The original wording and numbers from the sources, for readers who want them.

Failure risks

Failure risks
FailureTrigger and consequence
Oxidation in hot humid storagemoderate severityStorage at 85 degC and 85% RH for 600 h without encapsulationSurface oxidation to Bi2O3 and TeO2 cut zT by about 19 percent (n-type) and 22 percent (p-type) in the authors' test, through lower mobility and conductivity.
Explosive reaction with chlorates and perchlorateshigh severityContact of antimony telluride with chlorates or perchlorates, or with strong oxidising agentsThe SDS says the material is moderately explosive by chemical reaction with chlorates and perchlorates and flammable by spontaneous reaction with strong oxidising agents.
Supply interruption for bismuth and telluriumhigh severityChinese export controls and production concentrated in ChinaUSGS reports that China produced 88 percent of world bismuth (2025) and 80 percent of refined tellurium (2025). European tellurium prices rose 84 percent in 2025 after China required export documents that verify end use.

Side effects on surrounding parts

Side effects on surrounding parts
AffectsEffect
Firefighters and anyone near a fire or hot processHeating or decomposition gives off tellurium dioxide and bismuth oxide fumes.
Anyone near a fire or an acid spillDecomposition on heating or on contact with acid gives off toxic tellurium and antimony fumes from antimony telluride.

Handling and storage

  • Store in a cool, dry place in tightly closed containers, under dry inert gas. The SDS calls bismuth telluride moisture sensitive.
  • Keep away from acids, oxidising agents and water. For antimony telluride, also keep away from chlorates and perchlorates.
  • Avoid breathing dust and use eye and skin protection. Use a respirator or local exhaust where dust forms.

Mitigations

  • Encapsulate micro-thermoelectric devices strictly against humidity. The authors conclude that Bi2Te3-based materials have extremely poor hygrothermal stability without it.

Supply and geography

How common the raw materials are and where they come from.

Bismuth (40 percent of the bismuth telluride formula)

No crustal abundance read. USGS says bismuth minerals rarely occur in mineable quantities; it is mostly a byproduct of lead ore processing.

Top producers (2025)
China 88%
Recycling
USGS: recycled bismuth-containing alloy scrap was up to 10 percent of US apparent consumption for 2021 to 2025.

Tellurium (60 percent of the bismuth telluride formula)

No crustal abundance read. USGS says reserves are not reported at mine or country level, and more than 90 percent of tellurium comes from copper anode slimes.

Top producers (2025)
China 80%
Recycling
USGS: tellurium was recycled from CdTe solar cells in the US, but the quantity was limited.
Substitutes
USGS: bismuth selenide and organic polymers can substitute for BiTe in some thermoelectric devices.

Antimony (Sb2Te3 companion compound)

No crustal abundance read.

Top producers (2025)
China 36.4%, Russia 29.1%, Tajikistan 20%
Recycling
USGS: recycling supplied 12 percent of estimated US apparent consumption in 2025.