Galinstan GaInSn
Ga 68.5 %, In 21.5 %, Sn 10 % by mass: near-eutectic gallium-indium-tin liquid-metal alloy
Also known as Galinstan
Galinstan is a gallium-indium-tin alloy that is liquid at room temperature.
Evidence level
2 of 5
Lab-measured
- 0Predicted only. No one has made it, or no measurement exists.
- 1Calculated. Only calculated or predicted values from sources.
- 2Lab-measured. Measured properties with their conditions stated.
- 3Space-relevant tests. Measured in conditions relevant to space, such as vacuum or atomic oxygen.
- 4Ground-qualified. Qualified for an application on the ground.
- 5Flown or field-proven. Flight or field results exist.
Stay liquid
-19 °C melting point
Carry heat
25.4 W/m.K
Carry current
3.46 MS/m
Weight
6.488 g/cm3
Recipe, share of the weight
- Ga 68.5%Gallium
- In 21.5%Indium
- Sn 10%Tin
Best for
Liquid-metal heat transfer and conduction at or above -19 C, such as a liquid-metal microchannel heat sink or a stretchable conductor, where the alloy has to stay liquid and metallic
Weakest at
Oxide film and aluminium: the oxide skin plugs narrow passages, and the introduction of one source reports corrosivity to aluminium with no rate or test
Risk at a glance
- People Low. Irritant, low acute toxicity
- If it fails Moderate. Oxide skin plugs a narrow capillary
- Corrosion Low. A thin self-passivating Ga2O3 oxide skin forms in air, about 0.5 to 3 nm thick.
Quick facts: GaInSn
| Property | Value | Basis |
|---|---|---|
| Density | 6.44 to 6.49 g/cm³ | 2 sourced values across conditions |
| Thermal conductivity | 25.4 to 26.4 W/(m·K) | 2 sourced values across conditions |
| Melting point | -19 to 15.5 °C | 3 sourced values across conditions |
What is the density of Galinstan (GaInSn)?
Galinstan (GaInSn) has a density of 6.44 to 6.49 g/cm³. The range covers 2 sourced values across the tempers, forms and test conditions the sources report; room-temperature values are used where a source states a temperature.
What is the thermal conductivity of Galinstan (GaInSn)?
Galinstan (GaInSn) has a thermal conductivity of 25.4 to 26.4 W/(m·K). The range covers 2 sourced values across the tempers, forms and test conditions the sources report; room-temperature values are used where a source states a temperature.
What is the melting point of Galinstan (GaInSn)?
Galinstan (GaInSn) has a melting point of -19 to 15.5 °C. The range covers 3 sourced values across the tempers, forms and test conditions the sources report; room-temperature values are used where a source states a temperature.
What is Galinstan (GaInSn) used for?
Uses recorded in the sources include Liquid-metal microchannel heat sink; Liquid-metal-embedded elastomers for stretchable electronics.
Why it exists
Galinstan is a gallium-indium-tin alloy that is liquid at room temperature, with a printed melting point of -19 C and a printed boiling point of 1300 C. The review and the 2026 measurement agree on a conductivity of about 3.4 to 3.46 MS/m, and the review gives a thermal conductivity of 25.4 W/m.K. It was developed as a mercury substitute (KJMM introduction) and is now studied for liquid-metal heat sinks and stretchable electronics.
Where it's used
Liquid-metal microchannel heat sink
A 2026 simulation studies a galinstan-cooled mini-channel heat sink for a high-heat-flux chip (Micromachines).
Stretchable electronics
The review names galinstan and eutectic Ga-In as popular liquid-metal alloys for liquid-metal-embedded elastomers.
Recipe
Ga 68.5 %, In 21.5 %, Sn 10 % by mass: near-eutectic gallium-indium-tin liquid-metal alloy
Galinstan is a near-eutectic blend of gallium, indium and tin, by mass 68.5 % Ga, 21.5 % In and 10 % Sn (Rotometals SDS, Section 3). Wikipedia calls it near-eutectic rather than eutectic and says the commercial product may contain added flux, which no primary source read here confirms. The sources read give no process route.
| Ingredient | Share of the weight | What it does |
|---|---|---|
| Gallium Ga | 68.5% | Largest component by mass (SDS Section 3). The review says the oxide skin that forms in air is Ga2O3. |
| Indium In | 21.5% | Second component by mass (SDS Section 3). |
| Tin Sn | 10% | Smallest component by mass (SDS Section 3). |
Weight shares are as printed in the sources.
What it can do
Stay liquid
-19 °C melting point
measured
Galinstan melts at -19 C (review Table 1 and the Rotometals SDS).
Carry heat
25.4 W/m.K
measured
The review gives 25.4 W/m.K (Table 1). The Wikipedia value of 16.5 W/m.K is lower and is not used here.
Carry current
3.46 MS/m
measured
The KJMM measurement at about 21 C is 3.46 MS/m, with an uncertainty of 0.09 MS/m.
Weight
6.488 g/cm3
measured
The KJMM measurement at about 21 C is 6.488 g/cm3, with an uncertainty of 0.265 g/cm3. The SDS gives 6.44 g/cm3 at 20 C.
How it compares
The sources read for galinstan are for slightly different compositions and conditions, and the EGaIn row (eutectic gallium-indium) is a different alloy, so read the table rows as examples, not a ranking.
The same measurements for each material, so you can compare them. Each row names the key condition under the value; the full conditions and methods are in the numbered notes under Technical details. Other materials are shown beside it; each was measured under its own conditions, so open its page before comparing closely. Compare every grade in the family.
| Measurement | GaInSn | Sn | Pb | Bi | In | Cd | Sb | Pb-Sb | SnPb | SAC305 | - | - | In-Sn / In-Ag | SnZn and SnBi | Sn-Sb-Cu | Pb alloys |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Thermal behavior and safety | ||||||||||||||||
| Thermal conductivity of galinstan (review table)Printed in the Galinstan row of Table 1 as W/m.K | 25.4 W/m.K6 | 66.8 W/(m·K) | 35 W/(m.K) | 8 W/(m·K) | 81.8 W/(m·K) | 97 W/(m·K) | 24.4 W/(m·K) | no data | 49 W/m·K | 61 W/mK | no data | 4 W/m-K | 34 W/m·K | 61 W/m-K | no data | 49 W/m·K |
| Melting point of galinstan (review table)Printed as -19 C in the Galinstan row of Table 1 | -19 °C | 231.9 °C | 327.5 °C | 271.3 °C | 156.6 °C | 321 °C | 630.7 °C | 630 °C | 183 °C | 217 °C | 70 °C | 98 °C | 118 °C | 199 °C | 241 to 354 °C | 179 °C |
| Melting point of galinstan (Rotometals SDS) | -19 °C7 | 231.9 °C | 327.5 °C | 271.3 °C | 156.6 °C | 321 °C | 630.7 °C | 630 °C | 183 °C | 217 °C | 70 °C | 98 °C | 118 °C | 199 °C | 241 to 354 °C | 179 °C |
| Melting point of eutectic gallium-indium, EGaIn (review table) | 15.5 °C9 | 231.9 °C | 327.5 °C | 271.3 °C | 156.6 °C | 321 °C | 630.7 °C | 630 °C | 183 °C | 217 °C | 70 °C | 98 °C | 118 °C | 199 °C | 241 to 354 °C | 179 °C |
| Thermal conductivity of eutectic gallium-indium, EGaIn (review table)Printed in the EGaIn row of Table 1 as W/m.K | 26.4 W/m.K | 66.8 W/(m·K) | 35 W/(m.K) | 8 W/(m·K) | 81.8 W/(m·K) | 97 W/(m·K) | 24.4 W/(m·K) | no data | 49 W/m·K | 61 W/mK | no data | 4 W/m-K | 34 W/m·K | 61 W/m-K | no data | 49 W/m·K |
| Physical and electrical | ||||||||||||||||
| Density of galinstan (Rotometals SDS) | 6.44 g/cm³1 | 7310 kg/m3 | 11.34 g/cm³ | 9.78 g/cm³ | 7.31 g/cm³ | 8.69 g/cm³ | 6.68 g/cm³ | 6.68 g/cm³ | 8.4 g/cm³ | 7.35 g/cc | 10.15 g/cm³ | 10.44 g/cm³ | 7.3 g/cm³ | 7.27 g/cc | 7.39 g/cm³ | 11.28 - |
| Density of galinstan, measured near room temperature (KJMM 2026) | 6.488 g/cm³2 | 7310 kg/m3 | 11.34 g/cm³ | 9.78 g/cm³ | 7.31 g/cm³ | 8.69 g/cm³ | 6.68 g/cm³ | 6.68 g/cm³ | 8.4 g/cm³ | 7.35 g/cc | 10.15 g/cm³ | 10.44 g/cm³ | 7.3 g/cm³ | 7.27 g/cc | 7.39 g/cm³ | 11.28 - |
| Electrical conductivity of galinstan (review table) | 3.4 MS/m4 | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data |
| Electrical conductivity of galinstan, measured (KJMM 2026) | 3.46 MS/m5 | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data |
| Electrical conductivity of eutectic gallium-indium, EGaIn (review table) | 3.46 MS/m10 | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data |
| Other measurements | ||||||||||||||||
| Kinematic viscosity of galinstan, acid-covered sample (KJMM 2026) | 0.474 cSt3 | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data | no data |
| Boiling point of galinstan (Rotometals SDS) | 1300 °C8 | 2602 °C | 1740 °C | 1564 °C | 2080 °C | 765 °C | 1750 °C | no data | no data | no data | no data | no data | no data | no data | no data | no data |
Why choose it, and why not
Good for
- Liquid-metal heat transfer and conduction above -19 C, with a thermal conductivity of 25.4 W/m.K (review).
- Stretchable conductors, where the oxide skin helps the droplets keep their shape and stick to the elastomer (review).
Watch out for
- Oxide skin: it forms in air at 0.5 to 3 nm and can plug narrow capillaries (review, KJMM).
- Aluminium: the KJMM introduction reports corrosivity towards aluminium, with no rate or test.
- Composition: the SDS composition is near-eutectic, and the sources do not agree on the thermal conductivity (25.4 vs 16.5 W/m.K).
Galinstan is a room-temperature liquid metal with a melting point of -19 C and a thermal conductivity of 25.4 W/m.K in the review. Its irritant hazard is low according to the SDS. The sources' weak points are the oxide skin, which can plug narrow passages, and a reported but unmeasured corrosivity towards aluminium. The profile lacks specific heat, thermal expansion and a primary surface-tension value.
Technical details
For scientists and researchers. Everything above comes from the record below: every number with its method, its conditions and its source.
Other names and standards
The same grade under other systems, as datasheets and standards print them. Each code was checked against the page it comes from.
| System | Codes |
|---|---|
| Trade name | Galinstan |
Notes
The method, full conditions and any caveat for the numbered rows above.
| # | Measurement | Method | Conditions | Caveat |
|---|---|---|---|---|
| 1 | Density of galinstan (Rotometals SDS) | Value printed in the Relative Density line of the safety data sheet, which cites a reference in brackets that was not opened | temperature 20 °Ccomposition Ga 68.5 %, In 21.5 %, Sn 10 % by mass | — |
| 2 | Density of galinstan, measured near room temperature (KJMM 2026) | Measured by the authors and printed in the measured properties of the article | temperature about 21 °Cuncertainty +/- 0.265 g/cm3, as printedcomposition Ga68.5 In21.5 Sn10 (wt %) | — |
| 3 | Kinematic viscosity of galinstan, acid-covered sample (KJMM 2026) | Ubbelohde size 0 viscometer calibrated with the N.4 standard; the authors say the value is above a literature value of 0.329 cSt and attribute the gap to partial capillary obstruction by untreated oxides | temperature about 21 °Cuncertainty 0.018 cSt bound, as printedcomposition Ga68.5 In21.5 Sn10 (wt %)treatment sample covered with sulfuric acid at pH 0 | — |
| 4 | Electrical conductivity of galinstan (review table) | Printed as 3.40 * 10^6 S/m in the Galinstan row; converted to megasiemens per metre (1 MS/m = 10^6 S/m) without changing the digits | composition 68.5 % Ga, 21.5 % In, 10 % Sntemperature not statedunit in source 3.40 * 10^6 S/m | The KJMM measurement at about 21 C (next row) is 3.46 MS/m, so the two sources differ by about 1.8 % |
| 5 | Electrical conductivity of galinstan, measured (KJMM 2026) | In-house four-point probe calibrated with Wood's metal. The fetched text lost its superscript; the value is converted to MS/m from 3.46*10^6 +/- 0.09*10^6 S/m without changing the digits. | temperature about 21 °Cuncertainty 0.09 MS/m, as printedcomposition Ga68.5 In21.5 Sn10 (wt %)unit in source 3.46*10^6 +/- 0.09*10^6 S/m | — |
| 6 | Thermal conductivity of galinstan (review table) | — | composition 68.5 % Ga, 21.5 % In, 10 % Sntemperature not stated | The Wikipedia article prints a lower value of 16.5 W/m.K. It is a secondary source and is not entered here. |
| 7 | Melting point of galinstan (Rotometals SDS) | Printed in the Melting Point/Range line of the safety data sheet | composition Ga 68.5 %, In 21.5 %, Sn 10 % by mass | — |
| 8 | Boiling point of galinstan (Rotometals SDS) | Printed in the Boiling Point/Range line of the safety data sheet as 1300°C | pressure not stated | The Wikipedia article prints "> 1300 °C", a lower bound that is not entered |
| 9 | Melting point of eutectic gallium-indium, EGaIn (review table) | Printed in the Eutectic Gallium-Indium row of Table 1 | composition 75.5 % Ga, 24.5 % In (eutectic) | — |
| 10 | Electrical conductivity of eutectic gallium-indium, EGaIn (review table) | Printed as 3.46 * 10^6 S/m in the EGaIn row; converted to megasiemens per metre without changing the digits | composition 75.5 % Ga, 24.5 % In (eutectic)temperature not statedunit in source 3.46 * 10^6 S/m | — |
Corrosion and compatibility
What happens when it meets other materials and environments.
| Environment | Concern | What happens |
|---|---|---|
| Air or oxygen at room temperature | low | A thin self-passivating Ga2O3 oxide skin forms in air, about 0.5 to 3 nm thick.1 |
| Aluminium surfaces | not rated | The source reports corrosivity towards aluminium, with no rate or test.2 |
| Contact with strong bases, other metals and moisture | not rated | The SDS lists strong bases, metals and alkali metals as incompatible, and says the product is hygroscopic.3 |
| # | Environment | Details | Test conditions |
|---|---|---|---|
| 1 | Air or oxygen at room temperature | The review says the skin lowers the surface tension of droplets, acts as an elastic membrane, and increases adhesion to the substrate. The KJMM paper says the alloy has a known tendency to form an oxide film, and it reports that a sample left in air formed an oxide layer on the surface but did not seem to heavily oxidize. | basis the 0.5 to 3 nm range is a literature range the review quotes for Ga-based liquid metals, not a measured rate for galinstan |
| 2 | Aluminium surfaces | The KJMM introduction says the alloy is reported to have corrosivity towards metals and particularly aluminium and its alloys. The article does not give a rate, a test duration or the specimen condition for that statement, and the galinstan safety data sheet does not list aluminium. | basis literature statement quoted in the introduction, not tested in the article |
| 3 | Contact with strong bases, other metals and moisture | The safety data sheet names strong bases, metals, alkali metals and powdered metals as incompatible materials, and gives exposure to moisture as a condition to avoid. It gives no corrosion rate. | basis compatibility list in the safety data sheet, not a corrosion test |
Risks and side effects
Hazards to people, what happens when a cell overheats, and how the material is handled and stored.
For people
The SDS lists skin and eye irritation and harm if swallowed, with no toxicity data beyond that.
- Hazard statements
- The Rotometals SDS gives the signal word Warning and the statements harmful if swallowed, causes skin irritation and causes serious eye irritation.
- Exposure
- The SDS gives no exposure limit for gallium, indium or tin, and says inhalation does not pose any risk.
If it fails
The failure routes in these sources are an oxide skin that plugs narrow passages and a skin that breaks under high surface stress.
- Capillary plugging
- In the KJMM tests the viscometer capillary plugged easily with the Ga-In-Sn alloy, which the authors attribute to oxide formation.
- Surface stress
- The review gives a critical surface stress of 0.5 to 0.6 N/m for the oxide skin of Ga-based liquid metals, above which the skin breaks and reforms.
Handling and storage
- Atmosphere
- The SDS says to store under an inert atmosphere in tightly closed containers, and to keep the alloy away from moisture.
- Incompatible materials
- The SDS names strong bases, metals, alkali metals and powdered metals as incompatible.
Test details
The original wording and numbers from the sources, for readers who want them.
Failure risks
| Failure | Trigger and consequence |
|---|---|
| Oxide skin plugs a narrow capillarymoderate severity | Flow through a narrow capillary, such as a viscometer tube, with oxide present on the alloyThe KJMM authors say the viscometer capillary plugged easily when they tested the Ga-In-Sn alloy, and they believed oxide formation was the cause. The article gives no plug time or flow rate at which plugging occurs. |
| Oxide skin breaks under high surface stresslow severity | Surface stress above a critical value of 0.5 to 0.6 N/m, stated for Ga-based liquid metalsThe skin breaks and reforms immediately, so droplets change shape and then hold it again. The review treats this as a feature for printing and moulding, so the severity is low. |
Handling and storage
- Store under an inert atmosphere, in tightly closed containers in a dry, cool, well-ventilated place (SDS Section 7).
- Keep away from strong bases, metals, alkali metals and powdered metals, and avoid exposure to moisture (SDS Section 10).
- Wear eye and skin protection and use good industrial hygiene. Rinse eyes or skin with water for at least 15 minutes after contact (SDS Sections 4 and 8).
Mitigations
- Treatment with sulfuric acid at pH 0 alleviated the oxidation in the KJMM tests and restored flowability, but the acid was not entirely effective within the bulk fluid volume.
Supply and geography
How common the raw materials are and where they come from.
Gallium, primary low-purity production
USGS: the average gallium content of bauxite is 50 parts per million, and gallium in world bauxite resources is estimated to exceed 1 million tons.
- Top producers (2025)
- China 99%
- Recycling
- USGS: old scrap, none. Substantial new scrap from GaAs device manufacture was reprocessed to high-purity gallium at one facility in New York.
- Substitutes
- USGS: silicon is the principal competitor with GaAs in solar-cell applications, and silicon-germanium replaces GaAs in some heterojunction bipolar transistors.
Gallium metal imports to the United States
- Top producers (2024)
- Canada 28%, Japan 22%, China 18%, Germany 16%
Indium, world refinery production
- Top producers (2025)
- China 70%
- Recycling
- USGS: indium is most commonly recovered from ITO scrap in Japan and the Republic of Korea. Data on the quantity recovered were not available.
- Substitutes
- USGS: antimony tin oxide, carbon nanotube coatings, PEDOT and copper or silver nanowires have been developed as alternatives to ITO coatings.
Indium imports to the United States
- Top producers (2024)
- Republic of Korea 25%, Japan 22%, China 12%, Canada 11%
Tin, refined imports to the United States
- Top producers (2024)
- Peru 31%, Bolivia 27%, Indonesia 15%, Brazil 10%
- Recycling
- USGS: about 17,000 tons of tin from old and new scrap was recycled in 2025, which the summary gives as 22 % of apparent consumption.
Documents
Datasheets, safety data sheets, papers and standards you can open.
Full record
The complete spore, as stored. Free to reuse under CC-BY-4.0. Images keep the licence shown with each one.
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spore: profile
id: galinstan
spore_version: 0.2
family: low-melting-metals-and-solders
name: Galinstan
abbreviation: GaInSn
role: liquid-metal conductor and heat-transfer fluid
category: metals
type: heavy-metals
summary: |
Galinstan is a gallium-indium-tin alloy that is liquid at room temperature. Its printed composition is 68.5 % Ga, 21.5 % In and 10 % Sn by mass. The Rotometals safety data sheet prints a melting point of -19 C and a boiling point of 1300 C. A 2026 measurement at about 21 C gives a density of 6.488 g/cm3 and an electrical conductivity of 3.46 MS/m. A 2021 review gives a thermal conductivity of 25.4 W/m.K for the same alloy. In air the alloy forms a thin Ga2O3 oxide skin, which the same review gives as 0.5 to 3 nm. The skin can plug narrow capillaries, and the sources give no rate of corrosion for aluminium.
best_for: Liquid-metal heat transfer and conduction at or above -19 C, such as a liquid-metal microchannel heat sink or a stretchable conductor, where the alloy has to stay liquid and metallic
weakest_at: 'Oxide film and aluminium: the oxide skin plugs narrow passages, and the introduction of one source reports corrosivity to aluminium with no rate or test'
identity:
formula: 'Ga 68.5 %, In 21.5 %, Sn 10 % by mass: near-eutectic gallium-indium-tin liquid-metal alloy'
source: sds-rotometals
where: 'Section 1 (Product Name Galinstan) and Section 3 (Composition table: Gallium 68.5, Indium 21.5, Tin 10 weight %)'
designations:
- system: Trade name
code: Galinstan
source: sds-rotometals
where: Section 1, Product Name line
tags:
applications:
- thermal-control
- electronics-and-chips
properties:
- benchmark: density
label: Density of galinstan (Rotometals SDS)
value: 6.44
unit: g/cm3
scope: material
conditions:
temperature: 20 °C
composition: Ga 68.5 %, In 21.5 %, Sn 10 % by mass
method: Value printed in the Relative Density line of the safety data sheet, which cites a reference in brackets that was not opened
status: ground
source: sds-rotometals
where: Section 9, Relative Density line (6.44 g/cm3 at 20 C)
- benchmark: density
label: Density of galinstan, measured near room temperature (KJMM 2026)
value: 6.488
unit: g/cm3
scope: material
conditions:
temperature: about 21 °C
uncertainty: +/- 0.265 g/cm3, as printed
composition: Ga68.5 In21.5 Sn10 (wt %)
method: Measured by the authors and printed in the measured properties of the article
status: ground
source: kjmm-2026
where: Measured properties table, density row
- benchmark: kinematic_viscosity
label: Kinematic viscosity of galinstan, acid-covered sample (KJMM 2026)
value: 0.474
unit: cSt
scope: material
conditions:
temperature: about 21 °C
uncertainty: 0.018 cSt bound, as printed
composition: Ga68.5 In21.5 Sn10 (wt %)
treatment: sample covered with sulfuric acid at pH 0
method: Ubbelohde size 0 viscometer calibrated with the N.4 standard; the authors say the value is above a literature value of 0.329 cSt and attribute the gap to partial capillary obstruction by untreated oxides
status: ground
source: kjmm-2026
where: Table 1, acid-covered kinematic viscosity row
- benchmark: electrical_conductivity
label: Electrical conductivity of galinstan (review table)
value: 3.4
unit: MS/m
scope: material
conditions:
composition: 68.5 % Ga, 21.5 % In, 10 % Sn
temperature: not stated
unit_in_source: 3.40 * 10^6 S/m
method: Printed as 3.40 * 10^6 S/m in the Galinstan row; converted to megasiemens per metre (1 MS/m = 10^6 S/m) without changing the digits
status: ground
source: alizadeh-2021
where: Table 1, Galinstan row
note: The KJMM measurement at about 21 C (next row) is 3.46 MS/m, so the two sources differ by about 1.8 %
- benchmark: electrical_conductivity
label: Electrical conductivity of galinstan, measured (KJMM 2026)
value: 3.46
unit: MS/m
scope: material
conditions:
temperature: about 21 °C
uncertainty: 0.09 MS/m, as printed
composition: Ga68.5 In21.5 Sn10 (wt %)
unit_in_source: 3.46*10^6 +/- 0.09*10^6 S/m
method: In-house four-point probe calibrated with Wood's metal. The fetched text lost its superscript; the value is converted to MS/m from 3.46*10^6 +/- 0.09*10^6 S/m without changing the digits.
status: ground
source: kjmm-2026
where: Measured properties table, electrical conductivity row
- benchmark: thermal_conductivity
label: Thermal conductivity of galinstan (review table)
value: 25.4
unit: W/m.K
scope: material
conditions:
composition: 68.5 % Ga, 21.5 % In, 10 % Sn
temperature: not stated
method: Printed in the Galinstan row of Table 1 as W/m.K
status: ground
source: alizadeh-2021
where: Table 1, Galinstan row
note: The Wikipedia article prints a lower value of 16.5 W/m.K. It is a secondary source and is not entered here.
- benchmark: melting_point
label: Melting point of galinstan (review table)
value: -19
unit: °C
scope: material
conditions:
composition: 68.5 % Ga, 21.5 % In, 10 % Sn
method: Printed as -19 C in the Galinstan row of Table 1
status: ground
source: alizadeh-2021
where: Table 1, Galinstan row, melting temperature column
- benchmark: melting_point
label: Melting point of galinstan (Rotometals SDS)
value: -19
unit: °C
scope: material
conditions:
composition: Ga 68.5 %, In 21.5 %, Sn 10 % by mass
method: Printed in the Melting Point/Range line of the safety data sheet
status: ground
source: sds-rotometals
where: Section 9, Melting Point/Range line (-19 °C)
- benchmark: boiling_point
label: Boiling point of galinstan (Rotometals SDS)
value: 1300
unit: °C
scope: material
conditions:
pressure: not stated
method: Printed in the Boiling Point/Range line of the safety data sheet as 1300°C
status: ground
source: sds-rotometals
where: Section 9, Boiling Point/Range line
note: The Wikipedia article prints "> 1300 °C", a lower bound that is not entered
- benchmark: melting_point
label: Melting point of eutectic gallium-indium, EGaIn (review table)
value: 15.5
unit: °C
scope: material
conditions:
composition: 75.5 % Ga, 24.5 % In (eutectic)
method: Printed in the Eutectic Gallium-Indium row of Table 1
status: ground
source: alizadeh-2021
where: Table 1, Eutectic Gallium-Indium row, melting temperature column
- benchmark: electrical_conductivity
label: Electrical conductivity of eutectic gallium-indium, EGaIn (review table)
value: 3.46
unit: MS/m
scope: material
conditions:
composition: 75.5 % Ga, 24.5 % In (eutectic)
temperature: not stated
unit_in_source: 3.46 * 10^6 S/m
method: Printed as 3.46 * 10^6 S/m in the EGaIn row; converted to megasiemens per metre without changing the digits
status: ground
source: alizadeh-2021
where: Table 1, Eutectic Gallium-Indium row
- benchmark: thermal_conductivity
label: Thermal conductivity of eutectic gallium-indium, EGaIn (review table)
value: 26.4
unit: W/m.K
scope: material
conditions:
composition: 75.5 % Ga, 24.5 % In (eutectic)
temperature: not stated
method: Printed in the EGaIn row of Table 1 as W/m.K
status: ground
source: alizadeh-2021
where: Table 1, Eutectic Gallium-Indium row
corrosion:
- environment: Air or oxygen at room temperature
headline: A thin self-passivating Ga2O3 oxide skin forms in air, about 0.5 to 3 nm thick.
effect: The review says the skin lowers the surface tension of droplets, acts as an elastic membrane, and increases adhesion to the substrate. The KJMM paper says the alloy has a known tendency to form an oxide film, and it reports that a sample left in air formed an oxide layer on the surface but did not seem to heavily oxidize.
rating: low
conditions:
basis: the 0.5 to 3 nm range is a literature range the review quotes for Ga-based liquid metals, not a measured rate for galinstan
source: alizadeh-2021
where: Oxide layer paragraph, Ga-based liquid metals (section on EGaIn and Ga-In-Sn)
- environment: Aluminium surfaces
headline: The source reports corrosivity towards aluminium, with no rate or test.
effect: The KJMM introduction says the alloy is reported to have corrosivity towards metals and particularly aluminium and its alloys. The article does not give a rate, a test duration or the specimen condition for that statement, and the galinstan safety data sheet does not list aluminium.
rating: unknown
conditions:
basis: literature statement quoted in the introduction, not tested in the article
source: kjmm-2026
where: Section 1 (Introduction)
- environment: Contact with strong bases, other metals and moisture
headline: The SDS lists strong bases, metals and alkali metals as incompatible, and says the product is hygroscopic.
effect: The safety data sheet names strong bases, metals, alkali metals and powdered metals as incompatible materials, and gives exposure to moisture as a condition to avoid. It gives no corrosion rate.
rating: unknown
conditions:
basis: compatibility list in the safety data sheet, not a corrosion test
source: sds-rotometals
where: Section 10, Incompatible Materials and Conditions to Avoid lines
risks:
hazards:
- text: The Rotometals SDS (2015) lists the signal word Warning and the hazard statements harmful if swallowed, causes skin irritation and causes serious eye irritation. It gives the statements in words, with no H codes printed.
ghs: []
source: sds-rotometals
where: Section 2, Hazard Statements and Signal Word lines
failure_risks:
- mode: Oxide skin plugs a narrow capillary
trigger: Flow through a narrow capillary, such as a viscometer tube, with oxide present on the alloy
consequence: The KJMM authors say the viscometer capillary plugged easily when they tested the Ga-In-Sn alloy, and they believed oxide formation was the cause. The article gives no plug time or flow rate at which plugging occurs.
severity: moderate
source: kjmm-2026
where: Section 2.3 (viscometer capillary plugging)
- mode: Oxide skin breaks under high surface stress
trigger: Surface stress above a critical value of 0.5 to 0.6 N/m, stated for Ga-based liquid metals
consequence: The skin breaks and reforms immediately, so droplets change shape and then hold it again. The review treats this as a feature for printing and moulding, so the severity is low.
severity: low
source: alizadeh-2021
where: Oxide layer paragraph, Ga-based liquid metals
side_effects: []
handling:
- text: Store under an inert atmosphere, in tightly closed containers in a dry, cool, well-ventilated place (SDS Section 7).
source: sds-rotometals
where: Section 7, Storage line
- text: Keep away from strong bases, metals, alkali metals and powdered metals, and avoid exposure to moisture (SDS Section 10).
source: sds-rotometals
where: Section 10, Incompatible Materials and Conditions to Avoid lines
- text: Wear eye and skin protection and use good industrial hygiene. Rinse eyes or skin with water for at least 15 minutes after contact (SDS Sections 4 and 8).
source: sds-rotometals
where: Sections 4 and 8
mitigations:
- text: Treatment with sulfuric acid at pH 0 alleviated the oxidation in the KJMM tests and restored flowability, but the acid was not entirely effective within the bulk fluid volume.
source: kjmm-2026
where: Abstract and Section 4 (Conclusions)
uses:
- application: thermal-control
device: Liquid-metal microchannel heat sink
example: A 2026 numerical study models a galinstan-cooled mini-channel heat sink for a high-heat-flux microelectronic chip. It is a simulation, not a built device, and its property table uses Ga68In20Sn12 rather than the galinstan composition.
source: micromachines-2026
where: Abstract and Section 2.1 (high-heat-flux chip in contact with the substrate)
- application: electronics-and-chips
device: Liquid-metal-embedded elastomers for stretchable electronics
example: The review names Ga-In-Sn (Galinstan) and eutectic Ga-In as popular liquid-metal alloys for liquid-metal-embedded elastomers used in stretchable electronics and wearable devices.
source: alizadeh-2021
where: Section on liquid-metal-embedded elastomers, paragraph naming Ga-In-Sn (Galinstan)
supply:
- subject: Gallium, primary low-purity production
producers:
- country: China
share_percent: 99
year: 2025
critical_lists: []
abundance: 'USGS: the average gallium content of bauxite is 50 parts per million, and gallium in world bauxite resources is estimated to exceed 1 million tons.'
recycling: 'USGS: old scrap, none. Substantial new scrap from GaAs device manufacture was reprocessed to high-purity gallium at one facility in New York.'
substitutes:
- 'USGS: silicon is the principal competitor with GaAs in solar-cell applications, and silicon-germanium replaces GaAs in some heterojunction bipolar transistors.'
source: usgs-mcs2026-gallium
where: Events, Trends, and Issues paragraph (China 99 %, year as printed for 2025); World Resources; Recycling line; Substitutes paragraph
- subject: Gallium metal imports to the United States
producers:
- country: Canada
share_percent: 28
year: 2024
- country: Japan
share_percent: 22
year: 2024
- country: China
share_percent: 18
year: 2024
- country: Germany
share_percent: 16
year: 2024
critical_lists: []
source: usgs-mcs2026-gallium
where: Import Sources (2021-24) line, metal shares; the year is the end of the 2021 to 2024 period as printed
- subject: Indium, world refinery production
producers:
- country: China
share_percent: 70
year: 2025
critical_lists: []
recycling: 'USGS: indium is most commonly recovered from ITO scrap in Japan and the Republic of Korea. Data on the quantity recovered were not available.'
substitutes:
- 'USGS: antimony tin oxide, carbon nanotube coatings, PEDOT and copper or silver nanowires have been developed as alternatives to ITO coatings.'
source: usgs-mcs2026-indium
where: Events, Trends, and Issues paragraph (China 70 % of world total); Recycling line; Substitutes paragraph
- subject: Indium imports to the United States
producers:
- country: Republic of Korea
share_percent: 25
year: 2024
- country: Japan
share_percent: 22
year: 2024
- country: China
share_percent: 12
year: 2024
- country: Canada
share_percent: 11
year: 2024
critical_lists: []
source: usgs-mcs2026-indium
where: Import Sources (2021-24) line; the year is the end of the 2021 to 2024 period as printed
- subject: Tin, refined imports to the United States
producers:
- country: Peru
share_percent: 31
year: 2024
- country: Bolivia
share_percent: 27
year: 2024
- country: Indonesia
share_percent: 15
year: 2024
- country: Brazil
share_percent: 10
year: 2024
critical_lists: []
recycling: 'USGS: about 17,000 tons of tin from old and new scrap was recycled in 2025, which the summary gives as 22 % of apparent consumption.'
source: usgs-mcs2026-tin
where: Import Sources (2021-24) line; Recycling paragraph
documents:
- title: Rotometals galinstan safety data sheet, version 1.7, revised 2015-05-15
type: sds
url: https://fu.sav.sk/wp-content/uploads/uploaded/documents/BOZP/chem_bezp/MSDS/galinstan_rotometals.pdf
year: 2015
- title: Gallium-Indium-Tin Alloy Properties and Treatment with Sulfuric Acid, Korean Journal of Metals and Materials 64(4)
type: paper
url: https://doi.org/10.3365/KJMM.2026.64.4.312
year: 2026
- title: 'Robust and Multifunctional Liquid-Metal Embedded Elastomers for Ultrastretchable Electronics: a Short Review (arXiv 2104.07327)'
type: paper
url: https://arxiv.org/pdf/2104.07327
year: 2021
- title: Numerical Study on Heat Transfer Performance of Turbulence Enhancement Configurations for Galinstan Based Mini-Channel Cooling, Micromachines 17(1):83
type: paper
url: https://pmc.ncbi.nlm.nih.gov/articles/PMC12843614/
year: 2026
- title: 'USGS Mineral Commodity Summaries 2026: Gallium'
type: report
url: https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-gallium.pdf
year: 2026
- title: 'USGS Mineral Commodity Summaries 2026: Indium'
type: report
url: https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-indium.pdf
year: 2026
- title: 'USGS Mineral Commodity Summaries 2026: Tin'
type: report
url: https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-tin.pdf
year: 2026
- title: NIST Atomic Weights and Isotopic Compositions for All Elements, gallium
type: database
url: https://physics.nist.gov/cgi-bin/Compositions/stand_alone.pl?ele=Ga&all=all&ascii=html
- title: NIST Atomic Weights and Isotopic Compositions for All Elements, indium
type: database
url: https://physics.nist.gov/cgi-bin/Compositions/stand_alone.pl?ele=In&all=all&ascii=html
- title: NIST Atomic Weights and Isotopic Compositions for All Elements, tin
type: database
url: https://physics.nist.gov/cgi-bin/Compositions/stand_alone.pl?ele=Sn&all=all&ascii=html
- title: 'Wikipedia: Galinstan (composition and history only)'
type: database
url: https://en.wikipedia.org/wiki/Galinstan
gaps:
- Specific heat of galinstan was not found in a primary source. The Wikipedia article prints 296 J/kg.K, which is a secondary source and is not entered.
- Surface tension was not entered. The review's Table 1 prints 534 for galinstan with no unit, and the Wikipedia article gives a producer-dependent range (0.535 to 0.718 N/m), which is secondary.
- Coefficient of thermal expansion was not found in any fetched source.
- 'Vapour pressure: the SDS prints 10^-8 Torr at 500 C as a bound, which is not a value, so it was left out.'
- 'Thermal conductivity conflicts: the review prints 25.4 W/m.K and the Wikipedia article prints 16.5 W/m.K. The KJMM paper did not report thermal conductivity, and the Micromachines paper gives only a temperature formula for Ga68In20Sn12.'
- 'Non-canonical property names used as they are: electrical_conductivity and kinematic_viscosity are not in spores/property-canon.yaml.'
- Dynamic viscosity of 3.076 x 10^-3 kg/m s (uncertainty 0.173 x 10^-3 kg/m s) is printed in KJMM Table 1 but was not entered, because the printed exponent cannot be written as a plain value without changing the printed unit.
- 'Eutectic gallium-indium melting point 15.7 C from a vendor listing was not used: the VWR page returned HTTP 403 and only a search snippet was available.'
- 'The Geratherm galinstan SDS was not downloaded: the University of Minnesota copy returned no file. A search snippet describing a 2006 Geratherm sheet as corrosive is not used.'
- Hazard codes for pure gallium metal (H290 in an Avantor sheet) were not fetched. The PubChem record for gallium returned a browser check, so no PubChem GHS data were read.
- The commercial product may contain added flux (Wikipedia). No primary source was read for the flux, so the composition is the SDS composition only.
- Critical-mineral status of gallium, indium and tin was not found in the fetched USGS text, so critical_lists is empty.
- Gallium and indium supply shares are from the USGS text. The China gallium share of 99 % is given without a year in the paragraph, so the year 2025 is taken from the report's period.
- No outgassing, atomic oxygen, radiation or UV data for galinstan in space were searched in this run.
- 'No media: no image licence was checked.'
sources:
sds-rotometals:
title: 'Rotometals, Inc. Safety Data Sheet: Galinstan, version 1.7 (revision date 2015-05-15)'
id: Rotometals galinstan SDS v1.7
url: https://fu.sav.sk/wp-content/uploads/uploaded/documents/BOZP/chem_bezp/MSDS/galinstan_rotometals.pdf
year: 2015
kind: datasheet
license: supplier safety data sheet, cited not reproduced
kjmm-2026:
title: Gallium-Indium-Tin Alloy Properties and Treatment with Sulfuric Acid, Korean Journal of Metals and Materials 64(4), pp. 312-324 (Raadam and Lee)
id: DOI 10.3365/KJMM.2026.64.4.312
url: https://kjmm.org/kjmm/XmlViewer/f451272
year: 2026
kind: paper
license: cited, not reproduced
alizadeh-2021:
title: 'Robust and Multifunctional Liquid-Metal Embedded Elastomers for Ultrastretchable Electronics: a Short Review (Kaveh Alizadeh)'
id: arXiv 2104.07327
url: https://arxiv.org/pdf/2104.07327
year: 2021
kind: paper
license: arXiv preprint, cited not reproduced
micromachines-2026:
title: Numerical Study on Heat Transfer Performance of Turbulence Enhancement Configurations for Galinstan Based Mini-Channel Cooling (Li, Han, Wang, Dai, Chen), Micromachines 17(1):83
id: DOI 10.3390/mi17010083
url: https://pmc.ncbi.nlm.nih.gov/articles/PMC12843614/
year: 2026
kind: paper
license: cited, not reproduced
usgs-mcs2026-gallium:
title: 'Mineral Commodity Summaries 2026: Gallium (U.S. Geological Survey)'
id: USGS MCS 2026, prepared by Emily K. Schnebele
url: https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-gallium.pdf
year: 2026
kind: report
license: public domain (USGS)
usgs-mcs2026-indium:
title: 'Mineral Commodity Summaries 2026: Indium (U.S. Geological Survey)'
id: USGS MCS 2026, prepared by Rob Crangle
url: https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-indium.pdf
year: 2026
kind: report
license: public domain (USGS)
usgs-mcs2026-tin:
title: 'Mineral Commodity Summaries 2026: Tin (U.S. Geological Survey)'
id: USGS MCS 2026, prepared by Chad A. Friedline
url: https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-tin.pdf
year: 2026
kind: report
license: public domain (USGS)
nist-ga:
title: NIST Atomic Weights and Isotopic Compositions for All Elements, gallium (Ga, Z = 31)
id: standard atomic weight 69.723(1)
url: https://physics.nist.gov/cgi-bin/Compositions/stand_alone.pl?ele=Ga&all=all&ascii=html
kind: database
license: US government data
nist-in:
title: NIST Atomic Weights and Isotopic Compositions for All Elements, indium (In, Z = 49)
id: standard atomic weight 114.818(1)
url: https://physics.nist.gov/cgi-bin/Compositions/stand_alone.pl?ele=In&all=all&ascii=html
kind: database
license: US government data
nist-sn:
title: NIST Atomic Weights and Isotopic Compositions for All Elements, tin (Sn, Z = 50)
id: standard atomic weight 118.710(7)
url: https://physics.nist.gov/cgi-bin/Compositions/stand_alone.pl?ele=Sn&all=all&ascii=html
kind: database
license: US government data
wikipedia-galinstan:
title: Galinstan, Wikipedia (used for composition and history only)
url: https://en.wikipedia.org/wiki/Galinstan
kind: web
license: CC BY-SA 4.0, linked not reproduced
license: CC-BY-4.0
updated: '2026-10-26'
review:
status: draft
method: assistant
checked_values: 12
unreachable: 3
caveats: 4
note: 'Values were read by an AI assistant on 2026-10-26 from the pages and PDFs named in each entry (USGS and SDS text extracted from PDFs with pdftotext; KJMM values from the article''s XML viewer; arXiv values from Table 1 of the PDF). Unreachable: VWR catalog (HTTP 403), PubChem gallium record (browser check), University of Minnesota SDS (no file). Caveats: galinstan thermal conductivity differs between the review (25.4 W/m.K) and Wikipedia (16.5 W/m.K); the KJMM composition is Ga68.5In21.5Sn10 and the review''s is the same; surface tension has no printed unit in the review; the Micromachines property table uses Ga68In20Sn12 and is not used for values.'
story:
recipe:
line: Galinstan is a near-eutectic blend of gallium, indium and tin, by mass 68.5 % Ga, 21.5 % In and 10 % Sn (Rotometals SDS, Section 3). Wikipedia calls it near-eutectic rather than eutectic and says the commercial product may contain added flux, which no primary source read here confirms. The sources read give no process route.
parts:
- name: Gallium
symbol: Ga
share_percent: 68.5
role: Largest component by mass (SDS Section 3). The review says the oxide skin that forms in air is Ga2O3.
- name: Indium
symbol: In
share_percent: 21.5
role: Second component by mass (SDS Section 3).
- name: Tin
symbol: Sn
share_percent: 10
role: Smallest component by mass (SDS Section 3).
risk_groups:
- title: For people
lead: The SDS lists skin and eye irritation and harm if swallowed, with no toxicity data beyond that.
level: 1
verdict: Irritant, low acute toxicity
points:
- label: Hazard statements
line: The Rotometals SDS gives the signal word Warning and the statements harmful if swallowed, causes skin irritation and causes serious eye irritation.
- label: Exposure
line: The SDS gives no exposure limit for gallium, indium or tin, and says inhalation does not pose any risk.
- title: If it fails
lead: The failure routes in these sources are an oxide skin that plugs narrow passages and a skin that breaks under high surface stress.
verdict: Oxide plugging, not toxicity
points:
- label: Capillary plugging
line: In the KJMM tests the viscometer capillary plugged easily with the Ga-In-Sn alloy, which the authors attribute to oxide formation.
- label: Surface stress
line: The review gives a critical surface stress of 0.5 to 0.6 N/m for the oxide skin of Ga-based liquid metals, above which the skin breaks and reforms.
- title: Handling and storage
verdict: Inert, dry storage
points:
- label: Atmosphere
line: The SDS says to store under an inert atmosphere in tightly closed containers, and to keep the alloy away from moisture.
- label: Incompatible materials
line: The SDS names strong bases, metals, alkali metals and powdered metals as incompatible.
why: Galinstan is a gallium-indium-tin alloy that is liquid at room temperature, with a printed melting point of -19 C and a printed boiling point of 1300 C. The review and the 2026 measurement agree on a conductivity of about 3.4 to 3.46 MS/m, and the review gives a thermal conductivity of 25.4 W/m.K. It was developed as a mercury substitute (KJMM introduction) and is now studied for liquid-metal heat sinks and stretchable electronics.
uses:
- where: Liquid-metal microchannel heat sink
line: A 2026 simulation studies a galinstan-cooled mini-channel heat sink for a high-heat-flux chip (Micromachines).
- where: Stretchable electronics
line: The review names galinstan and eutectic Ga-In as popular liquid-metal alloys for liquid-metal-embedded elastomers.
can_do:
- label: Stay liquid
value: '-19 °C melting point'
benchmark: melting_point
line: Galinstan melts at -19 C (review Table 1 and the Rotometals SDS).
- label: Carry heat
value: 25.4 W/m.K
benchmark: thermal_conductivity
line: The review gives 25.4 W/m.K (Table 1). The Wikipedia value of 16.5 W/m.K is lower and is not used here.
- label: Carry current
value: 3.46 MS/m
benchmark: electrical_conductivity
line: The KJMM measurement at about 21 C is 3.46 MS/m, with an uncertainty of 0.09 MS/m.
- label: Weight
value: 6.488 g/cm3
benchmark: density
line: The KJMM measurement at about 21 C is 6.488 g/cm3, with an uncertainty of 0.265 g/cm3. The SDS gives 6.44 g/cm3 at 20 C.
compare: The sources read for galinstan are for slightly different compositions and conditions, and the EGaIn row (eutectic gallium-indium) is a different alloy, so read the table rows as examples, not a ranking.
compare_rows:
- label: Density
benchmark: density
- label: Melting point
benchmark: melting_point
- label: Thermal conductivity
benchmark: thermal_conductivity
handling:
- Store under an inert atmosphere in tightly closed containers, in a dry, cool, well-ventilated place (SDS).
- Keep away from strong bases, metals and alkali metals, and avoid moisture (SDS).
- The KJMM tests cleaned the oxide with sulfuric acid at pH 0 and restored flowability, which is the cleaning route the sources describe.
good_for:
- Liquid-metal heat transfer and conduction above -19 C, with a thermal conductivity of 25.4 W/m.K (review).
- Stretchable conductors, where the oxide skin helps the droplets keep their shape and stick to the elastomer (review).
watch_out:
- 'Oxide skin: it forms in air at 0.5 to 3 nm and can plug narrow capillaries (review, KJMM).'
- 'Aluminium: the KJMM introduction reports corrosivity towards aluminium, with no rate or test.'
- 'Composition: the SDS composition is near-eutectic, and the sources do not agree on the thermal conductivity (25.4 vs 16.5 W/m.K).'
verdict: Galinstan is a room-temperature liquid metal with a melting point of -19 C and a thermal conductivity of 25.4 W/m.K in the review. Its irritant hazard is low according to the SDS. The sources' weak points are the oxide skin, which can plug narrow passages, and a reported but unmeasured corrosivity towards aluminium. The profile lacks specific heat, thermal expansion and a primary surface-tension value.
References
Every number above carries a reference number. Click one to see the source and where in it the value comes from.