Galinstan GaInSn

Ga 68.5 %, In 21.5 %, Sn 10 % by mass: near-eutectic gallium-indium-tin liquid-metal alloy

Also known as Galinstan

Galinstan is a gallium-indium-tin alloy that is liquid at room temperature.

11 sources · Updated 2026-10-26 · CC BY 4.0

Evidence level

2 of 5

Lab-measured

Stay liquid

-19 °C melting point

Carry heat

25.4 W/m.K

Carry current

3.46 MS/m

Weight

6.488 g/cm3

Recipe, share of the weight

  • Ga 68.5%Gallium
  • In 21.5%Indium
  • Sn 10%Tin

Best for

Liquid-metal heat transfer and conduction at or above -19 C, such as a liquid-metal microchannel heat sink or a stretchable conductor, where the alloy has to stay liquid and metallic

Weakest at

Oxide film and aluminium: the oxide skin plugs narrow passages, and the introduction of one source reports corrosivity to aluminium with no rate or test

Risk at a glance

  • People Low. Irritant, low acute toxicity
  • If it fails Moderate. Oxide skin plugs a narrow capillary
  • Corrosion Low. A thin self-passivating Ga2O3 oxide skin forms in air, about 0.5 to 3 nm thick.

Quick facts: GaInSn

Key properties of GaInSn
PropertyValueBasis
Density6.44 to 6.49 g/cm³2 sourced values across conditions
Thermal conductivity25.4 to 26.4 W/(m·K)2 sourced values across conditions
Melting point-19 to 15.5 °C3 sourced values across conditions

What is the density of Galinstan (GaInSn)?

Galinstan (GaInSn) has a density of 6.44 to 6.49 g/cm³. The range covers 2 sourced values across the tempers, forms and test conditions the sources report; room-temperature values are used where a source states a temperature.

What is the thermal conductivity of Galinstan (GaInSn)?

Galinstan (GaInSn) has a thermal conductivity of 25.4 to 26.4 W/(m·K). The range covers 2 sourced values across the tempers, forms and test conditions the sources report; room-temperature values are used where a source states a temperature.

What is the melting point of Galinstan (GaInSn)?

Galinstan (GaInSn) has a melting point of -19 to 15.5 °C. The range covers 3 sourced values across the tempers, forms and test conditions the sources report; room-temperature values are used where a source states a temperature.

What is Galinstan (GaInSn) used for?

Uses recorded in the sources include Liquid-metal microchannel heat sink; Liquid-metal-embedded elastomers for stretchable electronics.

Why it exists

Galinstan is a gallium-indium-tin alloy that is liquid at room temperature, with a printed melting point of -19 C and a printed boiling point of 1300 C. The review and the 2026 measurement agree on a conductivity of about 3.4 to 3.46 MS/m, and the review gives a thermal conductivity of 25.4 W/m.K. It was developed as a mercury substitute (KJMM introduction) and is now studied for liquid-metal heat sinks and stretchable electronics.

Where it's used

Liquid-metal microchannel heat sink

A 2026 simulation studies a galinstan-cooled mini-channel heat sink for a high-heat-flux chip (Micromachines).

Stretchable electronics

The review names galinstan and eutectic Ga-In as popular liquid-metal alloys for liquid-metal-embedded elastomers.

Recipe

Ga 68.5 %, In 21.5 %, Sn 10 % by mass: near-eutectic gallium-indium-tin liquid-metal alloy

Galinstan is a near-eutectic blend of gallium, indium and tin, by mass 68.5 % Ga, 21.5 % In and 10 % Sn (Rotometals SDS, Section 3). Wikipedia calls it near-eutectic rather than eutectic and says the commercial product may contain added flux, which no primary source read here confirms. The sources read give no process route.

What GaInSn is made of
IngredientShare of the weightWhat it does
Gallium Ga 68.5% Largest component by mass (SDS Section 3). The review says the oxide skin that forms in air is Ga2O3.
Indium In 21.5% Second component by mass (SDS Section 3).
Tin Sn 10% Smallest component by mass (SDS Section 3).

Weight shares are as printed in the sources.

What it can do

Stay liquid

-19 °C melting point

measured

Galinstan melts at -19 C (review Table 1 and the Rotometals SDS).

Carry heat

25.4 W/m.K

measured

The review gives 25.4 W/m.K (Table 1). The Wikipedia value of 16.5 W/m.K is lower and is not used here.

Carry current

3.46 MS/m

measured

The KJMM measurement at about 21 C is 3.46 MS/m, with an uncertainty of 0.09 MS/m.

Weight

6.488 g/cm3

measured

The KJMM measurement at about 21 C is 6.488 g/cm3, with an uncertainty of 0.265 g/cm3. The SDS gives 6.44 g/cm3 at 20 C.

How it compares

The sources read for galinstan are for slightly different compositions and conditions, and the EGaIn row (eutectic gallium-indium) is a different alloy, so read the table rows as examples, not a ranking.

The same measurements for each material, so you can compare them. Each row names the key condition under the value; the full conditions and methods are in the numbered notes under Technical details. Other materials are shown beside it; each was measured under its own conditions, so open its page before comparing closely. Compare every grade in the family.

Benchmarks
MeasurementGaInSnSnPbBiInCdSbPb-SbSnPbSAC305--In-Sn / In-AgSnZn and SnBiSn-Sb-CuPb alloys
Thermal behavior and safety
Thermal conductivity of galinstan (review table)Printed in the Galinstan row of Table 1 as W/m.K25.4 W/m.K666.8 W/(m·K)35 W/(m.K)8 W/(m·K)81.8 W/(m·K)97 W/(m·K)24.4 W/(m·K)no data49 W/m·K61 W/mKno data4 W/m-K34 W/m·K61 W/m-Kno data49 W/m·K
Melting point of galinstan (review table)Printed as -19 C in the Galinstan row of Table 1-19 °C231.9 °C327.5 °C271.3 °C156.6 °C321 °C630.7 °C630 °C183 °C217 °C70 °C98 °C118 °C199 °C241 to 354 °C179 °C
Melting point of galinstan (Rotometals SDS)-19 °C7231.9 °C327.5 °C271.3 °C156.6 °C321 °C630.7 °C630 °C183 °C217 °C70 °C98 °C118 °C199 °C241 to 354 °C179 °C
Melting point of eutectic gallium-indium, EGaIn (review table)15.5 °C9231.9 °C327.5 °C271.3 °C156.6 °C321 °C630.7 °C630 °C183 °C217 °C70 °C98 °C118 °C199 °C241 to 354 °C179 °C
Thermal conductivity of eutectic gallium-indium, EGaIn (review table)Printed in the EGaIn row of Table 1 as W/m.K26.4 W/m.K66.8 W/(m·K)35 W/(m.K)8 W/(m·K)81.8 W/(m·K)97 W/(m·K)24.4 W/(m·K)no data49 W/m·K61 W/mKno data4 W/m-K34 W/m·K61 W/m-Kno data49 W/m·K
Physical and electrical
Density of galinstan (Rotometals SDS)6.44 g/cm³17310 kg/m311.34 g/cm³9.78 g/cm³7.31 g/cm³8.69 g/cm³6.68 g/cm³6.68 g/cm³8.4 g/cm³7.35 g/cc10.15 g/cm³10.44 g/cm³7.3 g/cm³7.27 g/cc7.39 g/cm³11.28 -
Density of galinstan, measured near room temperature (KJMM 2026)6.488 g/cm³27310 kg/m311.34 g/cm³9.78 g/cm³7.31 g/cm³8.69 g/cm³6.68 g/cm³6.68 g/cm³8.4 g/cm³7.35 g/cc10.15 g/cm³10.44 g/cm³7.3 g/cm³7.27 g/cc7.39 g/cm³11.28 -
Electrical conductivity of galinstan (review table)3.4 MS/m4no datano datano datano datano datano datano datano datano datano datano datano datano datano datano data
Electrical conductivity of galinstan, measured (KJMM 2026)3.46 MS/m5no datano datano datano datano datano datano datano datano datano datano datano datano datano datano data
Electrical conductivity of eutectic gallium-indium, EGaIn (review table)3.46 MS/m10no datano datano datano datano datano datano datano datano datano datano datano datano datano datano data
Other measurements
Kinematic viscosity of galinstan, acid-covered sample (KJMM 2026)0.474 cSt3no datano datano datano datano datano datano datano datano datano datano datano datano datano datano data
Boiling point of galinstan (Rotometals SDS)1300 °C82602 °C1740 °C1564 °C2080 °C765 °C1750 °Cno datano datano datano datano datano datano datano datano data

Why choose it, and why not

Good for

  • Liquid-metal heat transfer and conduction above -19 C, with a thermal conductivity of 25.4 W/m.K (review).
  • Stretchable conductors, where the oxide skin helps the droplets keep their shape and stick to the elastomer (review).

Watch out for

  • Oxide skin: it forms in air at 0.5 to 3 nm and can plug narrow capillaries (review, KJMM).
  • Aluminium: the KJMM introduction reports corrosivity towards aluminium, with no rate or test.
  • Composition: the SDS composition is near-eutectic, and the sources do not agree on the thermal conductivity (25.4 vs 16.5 W/m.K).

Galinstan is a room-temperature liquid metal with a melting point of -19 C and a thermal conductivity of 25.4 W/m.K in the review. Its irritant hazard is low according to the SDS. The sources' weak points are the oxide skin, which can plug narrow passages, and a reported but unmeasured corrosivity towards aluminium. The profile lacks specific heat, thermal expansion and a primary surface-tension value.

Technical details

For scientists and researchers. Everything above comes from the record below: every number with its method, its conditions and its source.

Other names and standards

The same grade under other systems, as datasheets and standards print them. Each code was checked against the page it comes from.

Other names and standards
SystemCodes
Trade nameGalinstan

Notes

The method, full conditions and any caveat for the numbered rows above.

Notes for the numbered rows
#MeasurementMethodConditionsCaveat
1Density of galinstan (Rotometals SDS)Value printed in the Relative Density line of the safety data sheet, which cites a reference in brackets that was not openedtemperature 20 °Ccomposition Ga 68.5 %, In 21.5 %, Sn 10 % by mass—
2Density of galinstan, measured near room temperature (KJMM 2026)Measured by the authors and printed in the measured properties of the articletemperature about 21 °Cuncertainty +/- 0.265 g/cm3, as printedcomposition Ga68.5 In21.5 Sn10 (wt %)—
3Kinematic viscosity of galinstan, acid-covered sample (KJMM 2026)Ubbelohde size 0 viscometer calibrated with the N.4 standard; the authors say the value is above a literature value of 0.329 cSt and attribute the gap to partial capillary obstruction by untreated oxidestemperature about 21 °Cuncertainty 0.018 cSt bound, as printedcomposition Ga68.5 In21.5 Sn10 (wt %)treatment sample covered with sulfuric acid at pH 0—
4Electrical conductivity of galinstan (review table)Printed as 3.40 * 10^6 S/m in the Galinstan row; converted to megasiemens per metre (1 MS/m = 10^6 S/m) without changing the digitscomposition 68.5 % Ga, 21.5 % In, 10 % Sntemperature not statedunit in source 3.40 * 10^6 S/mThe KJMM measurement at about 21 C (next row) is 3.46 MS/m, so the two sources differ by about 1.8 %
5Electrical conductivity of galinstan, measured (KJMM 2026)In-house four-point probe calibrated with Wood's metal. The fetched text lost its superscript; the value is converted to MS/m from 3.46*10^6 +/- 0.09*10^6 S/m without changing the digits.temperature about 21 °Cuncertainty 0.09 MS/m, as printedcomposition Ga68.5 In21.5 Sn10 (wt %)unit in source 3.46*10^6 +/- 0.09*10^6 S/m—
6Thermal conductivity of galinstan (review table)—composition 68.5 % Ga, 21.5 % In, 10 % Sntemperature not statedThe Wikipedia article prints a lower value of 16.5 W/m.K. It is a secondary source and is not entered here.
7Melting point of galinstan (Rotometals SDS)Printed in the Melting Point/Range line of the safety data sheetcomposition Ga 68.5 %, In 21.5 %, Sn 10 % by mass—
8Boiling point of galinstan (Rotometals SDS)Printed in the Boiling Point/Range line of the safety data sheet as 1300°Cpressure not statedThe Wikipedia article prints "> 1300 °C", a lower bound that is not entered
9Melting point of eutectic gallium-indium, EGaIn (review table)Printed in the Eutectic Gallium-Indium row of Table 1composition 75.5 % Ga, 24.5 % In (eutectic)—
10Electrical conductivity of eutectic gallium-indium, EGaIn (review table)Printed as 3.46 * 10^6 S/m in the EGaIn row; converted to megasiemens per metre without changing the digitscomposition 75.5 % Ga, 24.5 % In (eutectic)temperature not statedunit in source 3.46 * 10^6 S/m—

Corrosion and compatibility

What happens when it meets other materials and environments.

Corrosion and compatibility
EnvironmentConcernWhat happens
Air or oxygen at room temperature low A thin self-passivating Ga2O3 oxide skin forms in air, about 0.5 to 3 nm thick.1
Aluminium surfaces not rated The source reports corrosivity towards aluminium, with no rate or test.2
Contact with strong bases, other metals and moisture not rated The SDS lists strong bases, metals and alkali metals as incompatible, and says the product is hygroscopic.3
Corrosion details
#EnvironmentDetailsTest conditions
1 Air or oxygen at room temperature The review says the skin lowers the surface tension of droplets, acts as an elastic membrane, and increases adhesion to the substrate. The KJMM paper says the alloy has a known tendency to form an oxide film, and it reports that a sample left in air formed an oxide layer on the surface but did not seem to heavily oxidize. basis the 0.5 to 3 nm range is a literature range the review quotes for Ga-based liquid metals, not a measured rate for galinstan
2 Aluminium surfaces The KJMM introduction says the alloy is reported to have corrosivity towards metals and particularly aluminium and its alloys. The article does not give a rate, a test duration or the specimen condition for that statement, and the galinstan safety data sheet does not list aluminium. basis literature statement quoted in the introduction, not tested in the article
3 Contact with strong bases, other metals and moisture The safety data sheet names strong bases, metals, alkali metals and powdered metals as incompatible materials, and gives exposure to moisture as a condition to avoid. It gives no corrosion rate. basis compatibility list in the safety data sheet, not a corrosion test

Risks and side effects

Hazards to people, what happens when a cell overheats, and how the material is handled and stored.

For people

The SDS lists skin and eye irritation and harm if swallowed, with no toxicity data beyond that.

Hazard statements
The Rotometals SDS gives the signal word Warning and the statements harmful if swallowed, causes skin irritation and causes serious eye irritation.
Exposure
The SDS gives no exposure limit for gallium, indium or tin, and says inhalation does not pose any risk.

If it fails

The failure routes in these sources are an oxide skin that plugs narrow passages and a skin that breaks under high surface stress.

Capillary plugging
In the KJMM tests the viscometer capillary plugged easily with the Ga-In-Sn alloy, which the authors attribute to oxide formation.
Surface stress
The review gives a critical surface stress of 0.5 to 0.6 N/m for the oxide skin of Ga-based liquid metals, above which the skin breaks and reforms.

Handling and storage

Atmosphere
The SDS says to store under an inert atmosphere in tightly closed containers, and to keep the alloy away from moisture.
Incompatible materials
The SDS names strong bases, metals, alkali metals and powdered metals as incompatible.

Test details
The original wording and numbers from the sources, for readers who want them.

Failure risks

Failure risks
FailureTrigger and consequence
Oxide skin plugs a narrow capillarymoderate severityFlow through a narrow capillary, such as a viscometer tube, with oxide present on the alloyThe KJMM authors say the viscometer capillary plugged easily when they tested the Ga-In-Sn alloy, and they believed oxide formation was the cause. The article gives no plug time or flow rate at which plugging occurs.
Oxide skin breaks under high surface stresslow severitySurface stress above a critical value of 0.5 to 0.6 N/m, stated for Ga-based liquid metalsThe skin breaks and reforms immediately, so droplets change shape and then hold it again. The review treats this as a feature for printing and moulding, so the severity is low.

Handling and storage

  • Store under an inert atmosphere, in tightly closed containers in a dry, cool, well-ventilated place (SDS Section 7).
  • Keep away from strong bases, metals, alkali metals and powdered metals, and avoid exposure to moisture (SDS Section 10).
  • Wear eye and skin protection and use good industrial hygiene. Rinse eyes or skin with water for at least 15 minutes after contact (SDS Sections 4 and 8).

Mitigations

  • Treatment with sulfuric acid at pH 0 alleviated the oxidation in the KJMM tests and restored flowability, but the acid was not entirely effective within the bulk fluid volume.

Supply and geography

How common the raw materials are and where they come from.

Gallium, primary low-purity production

USGS: the average gallium content of bauxite is 50 parts per million, and gallium in world bauxite resources is estimated to exceed 1 million tons.

Top producers (2025)
China 99%
Recycling
USGS: old scrap, none. Substantial new scrap from GaAs device manufacture was reprocessed to high-purity gallium at one facility in New York.
Substitutes
USGS: silicon is the principal competitor with GaAs in solar-cell applications, and silicon-germanium replaces GaAs in some heterojunction bipolar transistors.

Gallium metal imports to the United States

Top producers (2024)
Canada 28%, Japan 22%, China 18%, Germany 16%

Indium, world refinery production

Top producers (2025)
China 70%
Recycling
USGS: indium is most commonly recovered from ITO scrap in Japan and the Republic of Korea. Data on the quantity recovered were not available.
Substitutes
USGS: antimony tin oxide, carbon nanotube coatings, PEDOT and copper or silver nanowires have been developed as alternatives to ITO coatings.

Indium imports to the United States

Top producers (2024)
Republic of Korea 25%, Japan 22%, China 12%, Canada 11%

Tin, refined imports to the United States

Top producers (2024)
Peru 31%, Bolivia 27%, Indonesia 15%, Brazil 10%
Recycling
USGS: about 17,000 tons of tin from old and new scrap was recycled in 2025, which the summary gives as 22 % of apparent consumption.