Copper indium gallium selenide CIGS

CuIn(1-x)Ga(x)Se2, a solid solution of copper indium selenide (x = 0) and copper gallium selenide (x = 1) · tetragonal, I42d

Copper indium gallium selenide (CIGS, CuIn(1-x)Ga(x)Se2) is a thin-film solar absorber whose band gap runs from 1.0 eV to 1.7 eV as gallium replaces indium, per the Wikipedia infobox.

9 sources · Updated 2026-11-01 · CC BY 4.0

Evidence level

2 of 5

Lab-measured

Band gap

1.0 to 1.7 eV

Thin absorber

1 to 2 µm

Laboratory efficiency

23.6% on glass

Recipe, share of the weight

  • Cu not statedCopper
  • In not statedIndium
  • Ga not statedGallium
  • Se not statedSelenium

Best for

Thin, flexible photovoltaic absorbers on light substrates: laboratory cells printed at 17.7% on steel, 16.2% on aluminium and 20.4% on polymer foil (no years given)

Weakest at

Space evidence: no flight record was found; the NASA ground tests give UV power retention, but the proton and electron results are only qualitative, and no humidity data were found

Risk at a glance

  • People No data. No hazard data recorded
  • If it fails No data. No failure risks recorded
  • Corrosion No data. No corrosion data recorded

Quick facts: CIGS

Key properties of CIGS
PropertyValueBasis
Density5.7 g/cm³1 sourced value
Melting point990 to 1,070 °C1 sourced value

What is the density of Copper indium gallium selenide (CIGS)?

Copper indium gallium selenide (CIGS) has a density of 5.7 g/cm³. The source and test conditions are listed in the properties table on this page.

What is the melting point of Copper indium gallium selenide (CIGS)?

Copper indium gallium selenide (CIGS) has a melting point of 990 to 1,070 °C. The source and test conditions are listed in the properties table on this page.

What is Copper indium gallium selenide (CIGS) used for?

Uses recorded in the sources include Thin-film photovoltaic module on a flexible substrate; Commercial thin-film modules; Space power (proposed; no flight data in the sources read).

Why it exists

Copper indium gallium selenide (CIGS) is a thin-film photovoltaic absorber with the formula CuIn(1-x)Ga(x)Se2, a solid solution between copper indium selenide and copper gallium selenide. The Wikipedia article says it is best known as the absorber in thin-film solar cells, and that deposition on flexible substrates makes flexible, lightweight solar panels possible. For space, the same article says CIGS cells show high radiation tolerance and are promising candidates for space applications, but it gives no dose or flight figures. No flight record was found in the sources read for this profile.

Where it's used

Thin-film photovoltaic modules

The Wikipedia article says CIGS is best known as the absorber in thin-film solar cells, and that its deposition on flexible substrates enables flexible, lightweight panels.

Commercial thin-film modules

The article prints a 17.8% efficiency for a Solar Frontier module of 900 cm2 and a 17.4% aperture efficiency for a MiaSole module, the latter confirmed by Fraunhofer in 2019. It gives no test conditions for either.

Space power, proposed

The article says CIGS cells show high radiation tolerance and are promising candidates for space applications. No flight or dose data are given in the sources read.

Recipe

CuIn(1-x)Ga(x)Se2, a solid solution of copper indium selenide (x = 0) and copper gallium selenide (x = 1)

CIGS is a solid solution of copper indium selenide (CuInSe2) and copper gallium selenide (CuGaSe2), written CuIn(1-x)Ga(x)Se2 with x running from 0 to 1. The Wikipedia article says the film is made by co-evaporating or co-sputtering copper, gallium and indium onto a substrate and then annealing it in selenium vapour, or by sputtering metal layers and then selenizing them.

What CIGS is made of
IngredientShare of the weightWhat it does
Copper Cu not stated The metal cation that sits on one of the two cation sites in the chalcopyrite structure; the article lists copper in the formula.
Indium In not stated Sets the larger end of the band gap (about 1.0 eV in CuInSe2, per the article).
Gallium Ga not stated Raises the band gap toward about 1.7 eV in CuGaSe2, per the article.
Selenium Se not stated The anion that completes the tetrahedral bonding in the chalcopyrite structure.

Weight shares are as printed in the sources.

What it can do

Band gap

1.0 to 1.7 eV

measured

The band gap changes continuously with composition, from about 1.0 eV for copper indium selenide to about 1.7 eV for copper gallium selenide (Wikipedia infobox and lead section).

Thin absorber

1 to 2 µm

measured

The absorber layer is 1 to 2 µm thick, per the comparison section of the Wikipedia solar-cell article. That thin layer is what allows the flexible, lightweight deposition described above.

Laboratory efficiency

23.6% on glass

A laboratory cell on glass is printed at 23.6% (about 0.9 cm2, no year given). The properties section gives 23.64% as a 2024 claim without test conditions.

How it compares

CIGS is one of the thin-film photovoltaic absorbers. The USGS selenium chapter names amorphous silicon and cadmium telluride as the two principal competitors with CIGS in thin-film cells. The sources read give CIGS a band gap of 1.0 to 1.7 eV and a 1 to 2 µm absorber, but no side-by-side efficiency, cost or lifetime comparison with those two materials, so none is made here. The 2002 NASA-hosted conference paper on the sulfide variant CIGS2 reported 8.84% AM0 efficiency on 127 µm stainless steel foil. That is a different compound and is not treated as a CIGS value.

The same measurements for each material, so you can compare them. Each row names the key condition under the value; the full conditions and methods are in the numbered notes under Technical details. Compare every grade in the family.

Benchmarks
MeasurementCIGS
Thermal behavior and safety
Melting point across the CIGS composition range990 to 1070 °C2
Physical and electrical
Density, CIGS (encyclopedia infobox value)5.7 g/cm³1
CIGS absorber layer thickness1 to 2 µm7
Temperature behavior
Chalcopyrite to zincblende transition temperature805 to 1045 °C6
Other measurements
Band gap across the CIGS composition range1 to 1.7 eV3
Lattice constant a, tetragonal chalcopyrite cell0.56 to 0.58 nm4
Lattice constant c, tetragonal chalcopyrite cell1.1 to 1.15 nm5

Why choose it, and why not

Good for

  • Thin, flexible absorbers: 1 to 2 µm layers on glass, steel, aluminium or polymer foil, with laboratory cells at 17.7% on steel, 16.2% on aluminium and 20.4% on polymer foil (no years given).
  • Light panels: the article says flexible deposition enables flexible, lightweight solar panels.

Watch out for

  • The efficiency figures conflict: 23.6% in the table and 23.64% in the text, with no year or test condition for either.
  • No flight record was found. NASA ground tests give UV power retention, but the proton and electron results are qualitative.
  • Supply is concentrated: China supplies 70% of world indium and 99% of primary low-purity gallium, and produced 53% of refined selenium in 2025 (USGS).

CIGS is a thin, flexible absorber with a band gap of 1.0 to 1.7 eV and laboratory efficiencies from 16.2% to 23.6%. The sources read here show no flight record and no quantified proton or electron performance; NASA ground tests give 86.5% UV power retention for a CORIN-coated CIGS cell, so treat it as a candidate for space power, not a proven one.

Technical details

For scientists and researchers. Everything above comes from the record below: every number with its method, its conditions and its source.

Cell-level benchmarks

Values for finished cells. These vary by manufacturer, so read the conditions in the notes. Compare every grade in the family.

Cell-level benchmarks
MeasurementCIGS
Thermal behavior and safety
Rapid thermal cycling range used on CIGS cells-55 to 125 °C19
Lifetime and stability
Power retention of a bare CIGS cell after simulated UV70 %16
Power retention of a CIGS cell with a CORIN coating after simulated UV86.5 %17
Power retention of a CIGS cell with CORIN and cerium oxide after simulated UV91.6 %18
Other measurements
Laboratory cell efficiency, CIGS on soda-lime glass23.6 %8
Claimed record efficiency, 2024 (text of the properties section)23.64 %9
Laboratory cell efficiency, CIGS on steel substrate17.7 %10
Laboratory cell efficiency, CIGS on aluminium substrate16.2 %11
Laboratory cell efficiency, CIGS on flexible polymer foil20.4 %12
Large-area production module efficiency, NREL13.8 %13
Production module efficiency, Solar Frontier17.8 %14
Production module aperture efficiency, MiaSole17.4 %15

Notes

The method, full conditions and any caveat for the numbered rows above.

Notes for the numbered rows
#MeasurementMethodConditionsCaveat
1Density, CIGS (encyclopedia infobox value)Value printed in the Wikipedia infobox, which cites no source for itcomposition CuIn(1-x)Ga(x)Se2, one value printed for x = 0 to 1temperature 25 °Cpressure 100 kPa (standard state, per infobox footnote)printed as ~5.7 g/cm3An encyclopedia figure with no cited measurement; use it only as an approximate reference.
2Melting point across the CIGS composition rangeRange printed in the Wikipedia infobox, which cites Tinoco et al. 1991 (Phys. Status Solidi A 124(2), 427) as reference 1composition x = 0 (CuInSe2) to x = 1 (CuGaSe2)pressure not stated—
3Band gap across the CIGS composition rangeRange printed in the Wikipedia infobox, citing Tinoco et al. 1991 as reference 1; the lead section gives the same two end values without a referencecomposition x = 0 (CIS) to x = 1 (CGS)temperature not statedShort snake_case name; no band-gap name exists in the canonical property file.
4Lattice constant a, tetragonal chalcopyrite cellRange printed in the Wikipedia infobox; no reference is shown for itcomposition x = 0 to 1crystal tetragonal chalcopyrite—
5Lattice constant c, tetragonal chalcopyrite cellRange printed in the Wikipedia infobox; no reference is shown for itcomposition x = 0 to 1crystal tetragonal chalcopyrite—
6Chalcopyrite to zincblende transition temperatureValues printed in the structure section, citing Tinoco et al. 1991 as reference 1composition x = 1 gives 805 °C; x = 0 gives 1045 °Ctransition chalcopyrite to zincblende on heating—
7CIGS absorber layer thicknessRange printed in the comparison section of the Wikipedia solar-cell articlelayer CIGS absorberShort snake_case name; no absorber-thickness name exists in the canonical property file.
8Laboratory cell efficiency, CIGS on soda-lime glassValue printed in the conversion-efficiency table of the Wikipedia solar-cell article, with the lab named as Uppsala University and Evolarsubstrate glasscell area about 0.9 cm2test not statedyear not printed in the tableNot a canonical property name. The properties section gives a different figure (23.64%, see next entry) and the page does not reconcile the two.
9Claimed record efficiency, 2024 (text of the properties section)Figure printed in the properties section as: In 2024 a CIGS efficiency record of 23.64% was claimedcell not statedtest not statedDiffers from the table value of 23.6%; both are printed on the page. The page gives no cell condition or source for this claim.
10Laboratory cell efficiency, CIGS on steel substrateValue printed in the conversion-efficiency table of the Wikipedia solar-cell article, credited to Empasubstrate steeltest not statedyear not printed in the table—
11Laboratory cell efficiency, CIGS on aluminium substrateValue printed in the conversion-efficiency table of the Wikipedia solar-cell article, credited to Empasubstrate aluminiumtest not statedyear not printed in the table—
12Laboratory cell efficiency, CIGS on flexible polymer foilValue printed in the conversion-efficiency table of the Wikipedia solar-cell article, credited to Empasubstrate flexible polymer foiltest not statedyear not printed in the table—
13Large-area production module efficiency, NRELValue printed in the conversion-efficiency table of the Wikipedia solar-cell article, credited to NRELformat large-area (meter-square) production paneltest not statedyear not printedA module figure, listed here under scope cell because the scope field allows only material or cell.
14Production module efficiency, Solar FrontierValue printed in the conversion-efficiency section of the Wikipedia solar-cell articlemodule area 900 cm2test not statedyear not printedA module figure, listed here under scope cell because the scope field allows only material or cell.
15Production module aperture efficiency, MiaSoleValue printed in the Wikipedia solar-cell article, Sputtering section, as confirmed by Fraunhofer in 2019basis aperture areaconfirmed by Fraunhofer, printed as 2019A module figure, listed here under scope cell because the scope field allows only material or cell.
16Power retention of a bare CIGS cell after simulated UVMeasured by NASA Marshall in its simulated UV test; printed as a bound, not a single figurelamp xenon arc lamp, 230 to 400 nmexposure up to 2,000 equivalent sun-hourscoating nonePaper says 70% or less; the companion slides say 70% power retention at best. Not a canonical property name.
17Power retention of a CIGS cell with a CORIN coating after simulated UVMeasured by NASA Marshall in its simulated UV testlamp xenon arc lamp, 230 to 400 nmexposure 1,578 equivalent sun-hourscoating CORINNot a canonical property name. The NASA slides print the same figure for coated CIGS.
18Power retention of a CIGS cell with CORIN and cerium oxide after simulated UVMeasured by NASA Marshall in its simulated UV testlamp xenon arc lamp, 230 to 400 nmexposure not stated for this resultcoating CORIN with cerium oxideNot a canonical property name. The paper gives no exposure for this result. The NASA slides print the same figure for coated CIGS.
19Rapid thermal cycling range used on CIGS cellsRapid thermal shock chamber at NASA Marshall; the range is the test range, not a ratingcycles 100coating bare and CORIN-coated CIGS; some samples with a separately cast anti-reflection layerTest range, not a rated service limit. Not a canonical property name.

Corrosion and compatibility

What happens when it meets other materials and environments.

Corrosion and compatibility
EnvironmentConcernWhat happens
Electron irradiation (space radiation, laboratory test) not rated Electron irradiation has only a minimal effect on CIGS cell performance, according to the Wikipedia article.1
Proton irradiation at high dose (space radiation, laboratory test) not rated High doses of proton irradiation degrade CIGS optical and electrical properties; the article gives no dose.2
Humidity, moisture and damp-heat exposure not rated No moisture or humidity data were found in the sources read.3
Ultraviolet exposure (xenon arc lamp, 230 to 400 nm, laboratory test) not rated Bare CIGS cells fell to 70% power or less in simulated UV, mainly through open circuit voltage; a CORIN coating kept more of it.4
Proton irradiation at 50 to 700 keV (laboratory test, NASA Marshall) not rated Bare CIGS cells degraded in 50 keV protons; coated CIGS cells kept their power.5
1 MeV electron irradiation (laboratory test, NASA Marshall) not rated CIGS kept its power through every 1 MeV electron exposure in the NASA Marshall test; IMM slightly degraded and single junction GaAs was strongly affected.6
Rapid thermal cycling, -55 to +125 °C (laboratory test, NASA Marshall) not rated CORIN-coated CIGS cells performed well in thermal cycling; the anti-reflection coating delaminated.7
Corrosion details
#EnvironmentDetailsTest conditions
1 Electron irradiation (space radiation, laboratory test) The article says studies show that electron irradiation causes only minimal impact to the performance of the solar cells. It gives no fluence, electron energy or measured change in efficiency. dose not statedenergy not statedcell not stated
2 Proton irradiation at high dose (space radiation, laboratory test) The article says high doses of proton irradiation degrade the optical and electrical properties of CIGS cells and reduce efficiency. It also says the damage can be recovered by thermal annealing, when displaced atoms return to their original sites at moderate temperatures. No temperature is given. dose high doses, not quantifiedanneal temperature moderate, not quantified
3 Humidity, moisture and damp-heat exposure The article has no passages on moisture, humidity, damp-heat testing, light soaking or operating lifetime in years. This entry records a gap in the data, not a result. basis absence of data in the source read
4 Ultraviolet exposure (xenon arc lamp, 230 to 400 nm, laboratory test) NASA Marshall found that bare CIGS cells degraded to 70% power or less after the UV exposure, mainly in open circuit voltage. A CORIN coating kept 86.5% power through 1,578 equivalent sun-hours, and CORIN with cerium oxide kept 91.6%. The paper gives no ageing rate beyond these figures. lamp xenon arc lamp, 230 to 400 nmexposure up to 2,000 equivalent sun-hourscells bare and coated CIGS from the LISA-T arrays
5 Proton irradiation at 50 to 700 keV (laboratory test, NASA Marshall) NASA Marshall exposed IMM and CIGS cells to 50, 100, 500 and 700 keV protons. Bare CIGS cells degraded rapidly in the 50 keV exposure, while coated CIGS cells maintained power retention through all proton exposures. The paper prints no retained-power percentage for the proton tests. energy 50, 100, 500 and 700 keVcells bare and coated CIGS
6 1 MeV electron irradiation (laboratory test, NASA Marshall) The paper says CIGS maintained power retention through all exposures, and that coatings had little effect on durability. It prints no power percentage for CIGS in the electron test, and the fluence range is not copied here. energy 1 MeV electronsfacility NASA MSFC Combined Environmental Effects Facility, Pelletron accelerator
7 Rapid thermal cycling, -55 to +125 °C (laboratory test, NASA Marshall) NASA Marshall cycled bare and coated CIGS cells between -55 and +125 °C for 100 cycles. CORIN-coated CIGS performed well. CIGS cells with a separately cast anti-reflection layer delaminated, and the paper says that process has been improved but not yet tested. range -55 to +125 °Ccycles 100coating CORIN; CORIN with an anti-reflection layer

Risks and side effects

Hazards to people, what happens when a cell overheats, and how the material is handled and stored.

For people

The sources read here do not classify a finished CIGS cell. The one hazard they name is hydrogen selenide, used in one manufacturing route.

Finished cell
The sources read here give no safety classification for a finished CIGS cell or module, and no safety data sheet was read.
Hydrogen selenide in production
The article says H2Se, used in one selenization route, is highly toxic and an environmental hazard. That sentence carries a citation-needed tag.
Cadmium buffer
The buffer layer is typically cadmium sulfide, deposited by chemical bath deposition. The article says some CIGS cells contain no cadmium at all.

If a cell is over-irradiated

These are the only failure routes the sources describe, and none is quantified.

Proton dose
The article says high doses of proton irradiation degrade the optical and electrical properties of CIGS cells and reduce their efficiency. No dose is given.
Annealing recovery
The article says the damage can be recovered by thermal annealing, when displaced atoms return to their original sites at moderate temperatures. No temperature is given.

Test details
The original wording and numbers from the sources, for readers who want them.

Handling and storage

  • The article gives no handling instructions for CIGS powder, targets or cells. Where H2Se is used in selenization, the article says it is highly toxic and should be handled under process controls.

Supply and geography

How common the raw materials are and where they come from.

Indium

Not found in the sources read for this profile.

Top producers (2025)
China 70%
Recycling
USGS: indium is most commonly recovered from ITO scrap in Japan and the Republic of Korea; the quantity recovered was not available.

Gallium

Not found in the sources read for this profile.

Top producers (2025)
China 99%
Recycling
USGS: old scrap none; new scrap from GaAs device manufacture was reprocessed at one facility in New York.

Selenium

Not found in the sources read for this profile.

Top producers (2025)
China 53%
Recycling
USGS: insignificant; most scrap from electronic materials is exported for recovery of contained selenium.
Substitutes
USGS: amorphous silicon and cadmium telluride are the two principal competitors with CIGS in thin-film photovoltaic cells.

Updated