{ "spore": "profile", "id": "silicon", "spore_version": "0.2", "family": "semiconductor-materials", "name": "Silicon", "abbreviation": "Si", "role": "semiconductor", "category": "semiconductors", "type": "silicon", "summary": "Silicon is the element Si, used as single-crystal wafers for chips and as the base material of most solar cells. The sources read for this profile give a density of 2.328 g/cm3, a band gap of 1.12 eV at 300 K, a melting point of 1415 °C and a relative permittivity of 11.9 at 300 K. Its electrical behaviour depends strongly on doping: a supplier table gives CZ boron-doped wafers a resistivity range of 0.001 to 50 Ω·cm.\n", "best_for": "Semiconductor wafers: a 1.12 eV band gap at 300 K and a well-documented resistivity range from doping", "weakest_at": "Light emission and heat flow: an indirect band gap (not stated in the sources read) and thermal conductivity of 150 W/(m·K), well below metals", "identity": { "formula": "Si, elemental silicon, supplied as single-crystal wafers grown by Czochralski (CZ) or float-zone (FZ) methods", "designations": [], "source": "pveducation", "where": "Atomic weight row and Section 9 Material Properties (atomic weight printed as 28.09)" }, "tags": { "environments": [], "stresses": [], "applications": [ "electronics-and-chips", "solar-arrays" ] }, "properties": [ { "benchmark": "density", "label": "Density", "value": 2.328, "bound": "exact", "unit": "g/cm3", "scope": "material", "conditions": { "temperature": "not stated on the page" }, "method": "Value printed in a materials property table", "status": "ground", "source": "pveducation", "where": "Section 9 Material Properties, row Density (ρ)", "source_detail": { "title": "PVEducation, General Properties of Silicon (Section 9, Material Properties)", "url": "https://www.pveducation.org/pvcdrom/materials/general-properties-of-silicon", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "lattice_constant", "label": "Lattice constant", "value": 0.543095, "bound": "exact", "unit": "nm", "scope": "material", "conditions": { "temperature": "not stated on the page" }, "method": "Value printed in a materials property table", "status": "ground", "source": "pveducation", "where": "Section 9 Material Properties, row Lattice constant", "source_detail": { "title": "PVEducation, General Properties of Silicon (Section 9, Material Properties)", "url": "https://www.pveducation.org/pvcdrom/materials/general-properties-of-silicon", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "bandgap", "label": "Energy band gap (table at 300 K)", "value": 1.12, "bound": "exact", "unit": "eV", "scope": "material", "conditions": { "temperature": "300 K (table title)" }, "method": "Value printed in a materials property table", "status": "ground", "source": "eesemi", "where": "Table Properties of Silicon (Si), Germanium (Ge), and Gallium Arsenide (GaAs) at 300 deg K, row Energy Gap at 300K", "source_detail": { "title": "EE Semi, Properties of Silicon (Si), Germanium (Ge), and Gallium Arsenide (GaAs) at 300 deg K", "url": "https://www.eesemi.com/sigegaas.htm", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "bandgap", "label": "Energy band gap (no temperature stated)", "value": 1.1242, "bound": "exact", "unit": "eV", "scope": "material", "conditions": { "temperature": "not stated on the page" }, "method": "Value printed in a materials property table", "status": "ground", "source": "pveducation", "where": "Section 9 Material Properties, row Energy bandgap (EG)", "source_detail": { "title": "PVEducation, General Properties of Silicon (Section 9, Material Properties)", "url": "https://www.pveducation.org/pvcdrom/materials/general-properties-of-silicon", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "intrinsic_carrier_concentration", "label": "Intrinsic carrier concentration (300 K table)", "value": 14500000000, "bound": "exact", "unit": "cm-3", "scope": "material", "conditions": { "temperature": "300 K (table title)" }, "method": "Value printed in a materials property table", "status": "ground", "source": "eesemi", "where": "Table at 300 deg K, row Intrinsic Carrier Concentration", "source_detail": { "title": "EE Semi, Properties of Silicon (Si), Germanium (Ge), and Gallium Arsenide (GaAs) at 300 deg K", "url": "https://www.eesemi.com/sigegaas.htm", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "intrinsic_carrier_concentration", "label": "Intrinsic carrier concentration (updated values)", "value": 10000000000, "bound": "exact", "unit": "cm-3", "scope": "material", "conditions": { "temperature": "300 K", "basis": "footnote: updated values from Sproul, Green and Zhao (1990) and Sproul and Green (1991)" }, "method": "Value printed in a materials property table", "status": "ground", "source": "pveducation", "where": "Section 9 Material Properties, row Intrinsic carrier concentration (ni) at 300K", "source_detail": { "title": "PVEducation, General Properties of Silicon (Section 9, Material Properties)", "url": "https://www.pveducation.org/pvcdrom/materials/general-properties-of-silicon", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "electron_mobility", "label": "Electron drift mobility", "value": 1500, "bound": "exact", "unit": "cm2/(V·s)", "scope": "material", "conditions": { "temperature": "300 K (table title)", "type": "drift mobility, doping not stated" }, "method": "Value printed in a materials property table", "status": "ground", "source": "eesemi", "where": "Table at 300 deg K, row Mobility (Drift), electrons", "source_detail": { "title": "EE Semi, Properties of Silicon (Si), Germanium (Ge), and Gallium Arsenide (GaAs) at 300 deg K", "url": "https://www.eesemi.com/sigegaas.htm", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "hole_mobility", "label": "Hole drift mobility", "value": 475, "bound": "exact", "unit": "cm2/(V·s)", "scope": "material", "conditions": { "temperature": "300 K (table title)", "type": "drift mobility, doping not stated" }, "method": "Value printed in a materials property table", "status": "ground", "source": "eesemi", "where": "Table at 300 deg K, row Mobility (Drift), holes", "source_detail": { "title": "EE Semi, Properties of Silicon (Si), Germanium (Ge), and Gallium Arsenide (GaAs) at 300 deg K", "url": "https://www.eesemi.com/sigegaas.htm", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "intrinsic_resistivity", "label": "Intrinsic resistivity", "value": 230000, "bound": "exact", "unit": "Ω·cm", "scope": "material", "conditions": { "temperature": "300 K (table title)", "doping": "intrinsic, undoped" }, "method": "Value printed in a materials property table", "status": "ground", "source": "eesemi", "where": "Table at 300 deg K, row Intrinsic Resistivity (printed as 2.3 x 10^5)", "source_detail": { "title": "EE Semi, Properties of Silicon (Si), Germanium (Ge), and Gallium Arsenide (GaAs) at 300 deg K", "url": "https://www.eesemi.com/sigegaas.htm", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "relative_permittivity", "label": "Relative permittivity", "value": 11.7, "bound": "exact", "unit": "dimensionless", "scope": "material", "conditions": { "temperature": "not stated on the page" }, "method": "Value printed in a materials property table", "status": "ground", "source": "pveducation", "where": "Section 9 Material Properties, row Relative permittivity (εr)", "source_detail": { "title": "PVEducation, General Properties of Silicon (Section 9, Material Properties)", "url": "https://www.pveducation.org/pvcdrom/materials/general-properties-of-silicon", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "relative_permittivity", "label": "Dielectric constant (300 K table)", "value": 11.9, "bound": "exact", "unit": "dimensionless", "scope": "material", "conditions": { "temperature": "300 K (table title)" }, "method": "Value printed in a materials property table", "status": "ground", "source": "eesemi", "where": "Table at 300 deg K, row Dielectric Constant (no unit printed)", "source_detail": { "title": "EE Semi, Properties of Silicon (Si), Germanium (Ge), and Gallium Arsenide (GaAs) at 300 deg K", "url": "https://www.eesemi.com/sigegaas.htm", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "melting_point", "label": "Melting point", "value": 1415, "bound": "exact", "unit": "°C", "scope": "material", "conditions": { "basis": "melting point as printed, no pressure or purity stated" }, "method": "Value printed in a materials property table", "status": "ground", "source": "pveducation", "where": "Section 9 Material Properties, row Melting point", "source_detail": { "title": "PVEducation, General Properties of Silicon (Section 9, Material Properties)", "url": "https://www.pveducation.org/pvcdrom/materials/general-properties-of-silicon", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "thermal_conductivity", "label": "Thermal conductivity", "value": 150, "bound": "exact", "unit": "W/(m·K)", "scope": "material", "conditions": { "temperature": "not stated on the page" }, "method": "Value printed in a materials property table", "status": "ground", "source": "pveducation", "where": "Section 9 Material Properties, row Thermal conductivity (printed as 1.5 W cm-1K-1 and 150 W m-1K-1)", "source_detail": { "title": "PVEducation, General Properties of Silicon (Section 9, Material Properties)", "url": "https://www.pveducation.org/pvcdrom/materials/general-properties-of-silicon", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "thermal_conductivity", "label": "Thermal conductivity (300 K table)", "value": 1.5, "bound": "exact", "unit": "W/(cm·°C)", "scope": "material", "conditions": { "temperature": "300 K" }, "method": "Value printed in a materials property table", "status": "ground", "source": "eesemi", "where": "Table at 300 deg K, row Thermal Conductivity at 300 K", "source_detail": { "title": "EE Semi, Properties of Silicon (Si), Germanium (Ge), and Gallium Arsenide (GaAs) at 300 deg K", "url": "https://www.eesemi.com/sigegaas.htm", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "effective_density_of_states", "label": "Effective density of states, conduction band", "value": 30000000000000000000, "bound": "exact", "unit": "cm-3", "scope": "material", "conditions": { "temperature": "not stated on the page" }, "method": "Value printed in a materials property table", "status": "ground", "source": "pveducation", "where": "Section 9 Material Properties, row NC", "source_detail": { "title": "PVEducation, General Properties of Silicon (Section 9, Material Properties)", "url": "https://www.pveducation.org/pvcdrom/materials/general-properties-of-silicon", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "effective_density_of_states", "label": "Effective density of states, valence band", "value": 10000000000000000000, "bound": "exact", "unit": "cm-3", "scope": "material", "conditions": { "temperature": "not stated on the page" }, "method": "Value printed in a materials property table", "status": "ground", "source": "pveducation", "where": "Section 9 Material Properties, row NV", "source_detail": { "title": "PVEducation, General Properties of Silicon (Section 9, Material Properties)", "url": "https://www.pveducation.org/pvcdrom/materials/general-properties-of-silicon", "kind": "web", "license": "page content, cited as published" } }, { "benchmark": "resistivity_range", "label": "Resistivity range, CZ boron-doped (p-type) wafer", "value": 0.001, "value_high": 50, "bound": "exact", "unit": "Ω·cm", "scope": "material", "conditions": { "dopant": "boron, p-type", "growth": "Czochralski (CZ)", "temperature": "not stated" }, "method": "Supplier resistivity range for the grade", "status": "ground", "source": "elcat", "where": "Dopant table, row Boron (p-type Si:B), CZ", "source_detail": { "title": "EL-CAT, Silicon data sheet (CZ and FZ dopant, resistivity and specification tables)", "url": "https://www.el-cat.com/dscsi.htm", "kind": "datasheet", "license": "page content, cited as published" } }, { "benchmark": "resistivity_range", "label": "Resistivity range, CZ phosphorus-doped (n-type) wafer", "value": 1, "value_high": 50, "bound": "exact", "unit": "Ω·cm", "scope": "material", "conditions": { "dopant": "phosphorus, n-type", "growth": "Czochralski (CZ)", "temperature": "not stated" }, "method": "Supplier resistivity range for the grade", "status": "ground", "source": "elcat", "where": "Dopant table, row Phosphorus (n-type Si:P), CZ", "source_detail": { "title": "EL-CAT, Silicon data sheet (CZ and FZ dopant, resistivity and specification tables)", "url": "https://www.el-cat.com/dscsi.htm", "kind": "datasheet", "license": "page content, cited as published" } }, { "benchmark": "resistivity_range", "label": "Resistivity range, float-zone wafer", "value": 0.01, "value_high": 10000, "bound": "exact", "unit": "Ω·cm", "scope": "material", "conditions": { "growth": "float-zone (FZ) and CFZ", "temperature": "not stated" }, "method": "Supplier resistivity range for the grade", "status": "ground", "source": "elcat", "where": "Dopant table, FZ/CFZ rows for boron and phosphorus", "source_detail": { "title": "EL-CAT, Silicon data sheet (CZ and FZ dopant, resistivity and specification tables)", "url": "https://www.el-cat.com/dscsi.htm", "kind": "datasheet", "license": "page content, cited as published" } }, { "benchmark": "carbon_concentration", "label": "Carbon concentration, CZ silicon", "value": 0.5, "bound": "exact", "unit": "ppma", "scope": "material", "conditions": { "growth": "Czochralski (CZ)", "limit": "maximum" }, "method": "Supplier specification", "status": "ground", "source": "elcat", "where": "Carbon concentration row, CZ silicon", "source_detail": { "title": "EL-CAT, Silicon data sheet (CZ and FZ dopant, resistivity and specification tables)", "url": "https://www.el-cat.com/dscsi.htm", "kind": "datasheet", "license": "page content, cited as published" } }, { "benchmark": "oxygen_concentration", "label": "Oxygen concentration, CZ silicon", "value": 24, "value_high": 38, "bound": "exact", "unit": "ppma", "scope": "material", "conditions": { "growth": "Czochralski (CZ)", "standard": "ASTM F121-76" }, "method": "Supplier specification, standard grade", "status": "ground", "source": "elcat", "where": "Oxygen concentration row, CZ silicon", "source_detail": { "title": "EL-CAT, Silicon data sheet (CZ and FZ dopant, resistivity and specification tables)", "url": "https://www.el-cat.com/dscsi.htm", "kind": "datasheet", "license": "page content, cited as published" } } ], "corrosion": [ { "environment": "Ambient air, room temperature", "headline": "Silicon forms a thin native oxide in air at room temperature.", "effect": "A 2013 J. Phys. Chem. C paper on oxidation of silicon gives a native oxide about 10 Å (1 nm) thick and calls it a poor dielectric, so it is usually removed before oxidation for microelectronics.", "rating": "low", "conditions": { "basis": "Thickness from the paper; the low rating is the assistant's reading of a thin oxide, not a printed rating" }, "source": "khalilov-jpcc-2013", "where": "Abstract (native oxide thickness about 10 Å); Introduction, paragraph 2 (up to 1 nm, poor dielectric)" } ], "risks": { "hazards": [ { "text": "PubChem aggregates GHS reports for silicon from 3,263 company reports. Most reports (3,142) say it does not meet GHS hazard criteria. The rest give H228 (flammable solid) and H320 (causes eye irritation), signal word Danger.", "ghs": [ "H228: Flammable solid", "H320: Causes eye irritation" ], "source": "pubchem-si", "where": "Safety and Hazards, GHS Classification (CID 5461123)" }, { "text": "Precautionary statements listed with the GHS entry include P210 (keep away from heat, sparks and open flames), P280 (protective gloves) and P305+P351+P338 (eye rinsing).", "ghs": [], "source": "pubchem-si", "where": "Safety and Hazards, GHS Classification precautionary statements" } ], "failure_risks": [ { "mode": "Wafer grade mismatch: a supplier gives CZ boron-doped wafers a resistivity range", "consequence": "Wafer grade mismatch: a supplier gives CZ boron-doped wafers a resistivity range of 0.001 to 50 Ω·cm, so the wrong dopant or growth method changes the device behaviour.", "source": "elcat", "where": "Dopant table, rows for boron and phosphorus, CZ" } ], "side_effects": [], "handling": [ { "text": "Keep away from heat, sparks and open flames, as the PubChem GHS entry for the flammable-solid class advises. The entry is an aggregate and applies to the form handled; check the supplier SDS for wafer or powder.", "source": "pubchem-si", "where": "Safety and Hazards, precautionary statements P210" } ], "mitigations": [] }, "uses": [ { "application": "electronics-and-chips", "device": "Single-crystal silicon wafer substrate", "example": "Wafers grown by Czochralski or float-zone methods, sold by resistivity grade", "source": "elcat", "where": "Wafer specification page, product range" }, { "application": "electronics-and-chips", "device": "Semiconductor chips", "example": "Silicon metal is further processed into semiconductor-grade polysilicon for chips; the LMU review says CZ single crystal is the raw material for microelectronics", "source": "usgs-si-2026", "where": "Domestic Production and Use paragraph; LMU review, introduction" }, { "application": "solar-arrays", "device": "Silicon solar cell", "example": "NASA reports that Si solar cells are the most important case in its displacement-damage analysis, which models proton damage to cells", "source": "nasa-tp-2004-213338", "where": "Section 9, Quantifying low energy proton effects" } ], "supply": [ { "subject": "Silicon metal and silicon materials (feedstock for chips, solar-grade polysilicon, aluminium alloys and silicones)", "abundance": "World and domestic resources are abundant; the source of silicon is silica (quartzite).", "producers": [ { "country": "China", "share_percent": 87, "year": 2025 }, { "country": "Brazil", "share_percent": 3.9, "year": 2025 }, { "country": "Norway", "share_percent": 2.8, "year": 2025 } ], "critical_lists": [], "substitutes": [], "source": "usgs-si-2026", "where": "Salient Statistics; Events, Trends, and Issues; Import Sources; World Production table" } ], "media": [], "documents": [ { "title": "EL-CAT silicon data sheet (CZ and FZ specifications)", "type": "datasheet", "url": "https://www.el-cat.com/dscsi.htm" }, { "title": "USGS Mineral Commodity Summaries 2026, Silicon", "type": "report", "url": "https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-silicon.pdf" }, { "title": "PubChem record for silicon (CID 5461123), GHS classification and identifiers", "type": "database", "url": "https://pubchem.ncbi.nlm.nih.gov/compound/Silicon" }, { "title": "NASA TP-2004-213338, Displacement Damage Effects in Solar Cells, Mining Damage", "type": "report", "url": "https://ntrs.nasa.gov/api/citations/20050071537/downloads/20050071537.pdf" }, { "title": "Khalilov et al., New Mechanism for Oxidation of Native Silicon Oxide, J. Phys. Chem. C 2013", "type": "paper", "url": "https://medialibrary.uantwerpen.be/oldcontent/container2642/files/jpcc13newmechanisms.pdf" }, { "title": "Single-Crystal Growth of Silicon (Czochralski process), LMU Munich", "type": "paper", "url": "https://www.cup.lmu.de/ac/kluefers/homepage/publ_pdf/czochralski_engl.pdf" } ], "gaps": [ "Indirect or direct band gap type: not stated in the sources read.", "Crystal structure and space group: pveducation says the crystal structure is not named on its page; no other source read.", "Electron and hole mobility at doping levels other than undoped: the pveducation mobility tables gave units only.", "Corrosion in acids or alkalis (HF, KOH etch): not read in this run.", "Float-zone process steps: not read in this run; only the CZ process is sourced.", "Radiation damage: the NASA report gives the method and says Si solar cells are the key case, but its numeric values are in figures that were not readable as text, so no radiation number is given.", "Crystal structure (diamond cubic): not confirmed on a fetched page in this run.", "Critical-mineral list status: the EU and USGS critical lists were not checked for silicon in this run.", "Intrinsic carrier concentration disagrees between sources (1.0e10 vs 1.45e10 cm-3 at 300 K); both are listed with their source.", "NIST WebBook silicon page gave only an Antoine vapour-pressure equation; no property from it was used.", "Only three sources were reached: ioffe.ru could not be fetched (TLS certificate error), and the Columbia lecture PDF and the microchemicals wafer PDF could not be read." ], "story": { "why": "Silicon is the semiconductor used for chips and, in the user brief, for solar cells. The sources read here give its density as 2.328 g/cm3, its band gap as 1.12 eV at 300 K, and its melting point as 1415 °C. Its electrical properties change with doping, which is why suppliers sell it as wafers across a wide resistivity range.", "uses": [ { "where": "Wafers", "line": "Single-crystal silicon is sold as wafers grown by Czochralski or float-zone methods. The supplier table covers resistivity from 0.001 to 50 Ω·cm for CZ boron-doped grades, and from 0.01 to 10000 Ω·cm for float-zone grades." } ], "can_do": [ { "label": "Act as a semiconductor", "line": "At 300 K the band gap is 1.12 eV in one table and 1.1242 eV in another, so the two sources agree to about one per cent.", "benchmark": "bandgap", "scope": "material", "value": "1.12 eV" }, { "label": "Carry heat", "line": "The printed thermal conductivity is 150 W/(m·K) with no temperature stated, or 1.5 W/(cm·°C) at 300 K in a second table.", "benchmark": "thermal_conductivity", "scope": "material", "value": "150 W/(m·K)" }, { "label": "Weight", "line": "Density is printed as 2.328 g/cm3.", "benchmark": "density", "scope": "material", "value": "2.328 g/cm3" } ], "compare": "Intrinsic silicon at 300 K has a resistivity of 230000 Ω·cm, while a CZ boron-doped grade can be as low as 0.001 Ω·cm. Doping changes the resistance by many orders of magnitude. The intrinsic carrier concentration is printed as 1.0e10 cm-3 in one source and 1.45e10 cm-3 in another, both at 300 K. Check which edition a design rule is based on.", "compare_rows": [ { "label": "Density", "benchmark": "density", "scope": "material" }, { "label": "Melting point", "benchmark": "melting_point", "scope": "material" }, { "label": "Thermal conductivity", "benchmark": "thermal_conductivity", "scope": "material" } ], "handling": [ "Silicon wafers are made to a resistivity grade. Pick the dopant and growth method from the supplier table, and check the supplier SDS for the form handled." ], "good_for": [ "label: Wafers with a set resistivity line: Doping sets the resistivity, and suppliers quote it as a range per dopant and growth method." ], "watch_out": [ "label: Mixed sources line: Some values carry no temperature, so compare only figures that state the same condition.", "label: Thermal conductivity line: At 150 W/(m·K) silicon conducts heat far less well than copper, a fact that matters for thermal control." ], "verdict": "Silicon is a well-documented semiconductor. Its band gap, density and melting point are printed in more than one source, and its resistivity is set by doping. Its hazards are low in the PubChem aggregate. Radiation numbers and acid or alkali corrosion are not covered by the sources read here.", "recipe": { "line": "Silicon is the element Si, atomic weight 28.085 (PubChem). Commercial single crystals are made by the Czochralski process: polysilicon is melted at just above its melting point in a silica crucible under 10 to 200 mbar of argon, a seed is dipped in and slowly pulled, and the crystal is grown to diameters up to 300 mm. The LMU review says about 95 % of world silicon single-crystal production uses this process.", "parts": [ { "name": "Silicon", "symbol": "Si", "role": "Element. The crystal is pure silicon, doped with boron or phosphorus to set resistivity.", "atomic_weight": 28.085, "share_percent": 100, "source": "pubchem-si", "where": "Compound record, Molecular Weight (CID 5461123)" } ] }, "risk_groups": [ { "title": "For people", "lead": "The PubChem aggregate for silicon is mostly \"not classified\" (3,142 of 3,263 reports). A minority of reports give H228 (flammable solid) and H320 (eye irritation). Low concern in the aggregate; check the supplier SDS for the form", "points": [ { "label": "Silicon as a substance", "line": "PubChem's aggregate lists H228 and H320 from a small share of reports. No exposure limit was read in this run, so none is given here." } ], "level": 1, "verdict": "Low concern in the aggregate; check the supplier SDS for" }, { "title": "If it fails", "lead": "Failure routes found in the sources are about the wafer grade, not about hazards.", "points": [ { "label": "Wrong resistivity", "line": "A supplier gives CZ boron-doped wafers a resistivity range of 0.001 to 50 Ω·cm, so the grade has to be chosen for the device, or the wafer will not behave as intended." }, { "label": "Oxygen content", "line": "CZ silicon carries oxygen in the range 24 to 38 ppma under ASTM F121-76, a value the supplier lists as standard." } ] }, { "title": "Handling and storage", "points": [ { "label": "Keep to the grade", "line": "Choose the growth method and dopant from the supplier table. The sources read here give no storage advice." } ] } ] }, "updated": "2026-10-19", "review": { "status": "draft", "method": "assistant", "checked_values": 0, "unreachable": 0, "caveats": 0 }, "sources": { "pveducation": { "title": "PVEducation, General Properties of Silicon (Section 9, Material Properties)", "url": "https://www.pveducation.org/pvcdrom/materials/general-properties-of-silicon", "kind": "web", "license": "page content, cited as published" }, "eesemi": { "title": "EE Semi, Properties of Silicon (Si), Germanium (Ge), and Gallium Arsenide (GaAs) at 300 deg K", "url": "https://www.eesemi.com/sigegaas.htm", "kind": "web", "license": "page content, cited as published" }, "elcat": { "title": "EL-CAT, Silicon data sheet (CZ and FZ dopant, resistivity and specification tables)", "url": "https://www.el-cat.com/dscsi.htm", "kind": "datasheet", "license": "page content, cited as published" }, "usgs-si-2026": { "title": "USGS Mineral Commodity Summaries 2026, Silicon", "url": "https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-silicon.pdf", "kind": "report", "license": "public domain (USGS), cited as published" }, "pubchem-si": { "title": "PubChem, Silicon (CID 5461123), GHS classification", "url": "https://pubchem.ncbi.nlm.nih.gov/compound/Silicon", "kind": "database", "license": "public domain (NCBI), cited as published" }, "nasa-tp-2004-213338": { "title": "NASA/TP-2004-213338, Displacement Damage Effects in Solar Cells, Mining Damage (S.R. Messenger)", "url": "https://ntrs.nasa.gov/api/citations/20050071537/downloads/20050071537.pdf", "kind": "report", "license": "public domain (NASA), cited as published" }, "khalilov-jpcc-2013": { "title": "Khalilov et al., New Mechanism for Oxidation of Native Silicon Oxide, J. Phys. Chem. C 2013, 117, 9819-9825", "url": "https://medialibrary.uantwerpen.be/oldcontent/container2642/files/jpcc13newmechanisms.pdf", "kind": "paper", "license": "author copy, cited as published" }, "lmu-cz-2008": { "title": "Single-Crystal Growth of Silicon (Czochralski process), LMU Munich, English version", "url": "https://www.cup.lmu.de/ac/kluefers/homepage/publ_pdf/czochralski_engl.pdf", "kind": "paper", "license": "author copy, cited as published" } }, "license": "CC-BY-4.0", "url": "https://spacemushroom.com/profiles/silicon/" }