{
  "spore": "profile",
  "id": "gallium-oxide",
  "spore_version": "0.2",
  "family": "semiconductor-materials",
  "name": "Gallium oxide (beta-Ga2O3)",
  "abbreviation": "Ga2O3",
  "role": "ultra-wide-bandgap power semiconductor",
  "category": "semiconductors",
  "type": "ga2o3",
  "summary": "Beta-gallium oxide (beta-Ga2O3) is an ultra-wide-bandgap semiconductor. The 2019 review in Journal of Semiconductors gives a band gap of 4.8 eV and an estimated critical (breakdown) field of 8 MV/cm for the beta phase. Its Table 1 gives a Baliga figure of merit of 3200 relative to silicon (Si = 1). Table 1 also gives a thermal conductivity of 10 to 30 W/mK. No radiation, space or corrosion test of this material was read in this run.\n",
  "best_for": "Power switching devices where a wide band gap of 4.8 eV and an estimated breakdown field of 8 MV/cm matter (per the 2019 review)",
  "weakest_at": "Thermal conductivity of 10 to 30 W/mK (Table 1 of the 2019 review, temperature not stated), and no space or radiation data in the sources read here",
  "identity": {
    "formula": "Ga2O3 (beta polymorph of gallium(III) oxide, two gallium atoms and three oxygen atoms per formula unit)",
    "cas": "12024-21-4",
    "designations": [],
    "source": "wiki-ga2o3",
    "where": "Identifiers box of the Wikipedia article (CAS number only; no other identifiers taken from it)"
  },
  "tags": {
    "environments": [],
    "stresses": [],
    "applications": [
      "electronics-and-chips"
    ]
  },
  "properties": [
    {
      "benchmark": "band_gap",
      "label": "Band gap, beta-Ga2O3",
      "value": 4.8,
      "bound": "exact",
      "unit": "eV",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "temperature": "not stated"
      },
      "method": "Value printed in Table 1 of an open-access review of gallium oxide power devices",
      "status": "ground",
      "note": "The abstract of the same review gives a range of 4.5 to 4.8 eV, so the value depends on the source.",
      "source": "jos-ga2o3-review",
      "where": "Table 1 (material parameters), row Bandgap",
      "source_detail": {
        "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
        "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
        "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
        "year": 2019,
        "kind": "paper",
        "license": "not stated on the page read"
      }
    },
    {
      "benchmark": "breakdown_field",
      "label": "Critical (breakdown) electric field, beta-Ga2O3",
      "value": 8,
      "bound": "exact",
      "unit": "MV/cm",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "basis": "described as estimated in the abstract; no test condition given"
      },
      "method": "Estimated value printed in the abstract and in Table 1 of the review; not a measured breakdown test",
      "status": "ground",
      "source": "jos-ga2o3-review",
      "where": "Abstract; Table 1, row Critical field (EC)",
      "source_detail": {
        "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
        "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
        "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
        "year": 2019,
        "kind": "paper",
        "license": "not stated on the page read"
      }
    },
    {
      "benchmark": "electron_mobility",
      "label": "Intrinsic electron mobility limit, beta-Ga2O3",
      "value": 250,
      "bound": "exact",
      "unit": "cm2/(V·s)",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "basis": "intrinsic limit, as printed in the abstract"
      },
      "method": "Value printed in the abstract of the review",
      "status": "ground",
      "note": "Table 1 of the same review gives a carrier mobility of 300 cm2/(V·s), so the abstract and table disagree. Both values are kept.",
      "source": "jos-ga2o3-review",
      "where": "Abstract",
      "source_detail": {
        "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
        "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
        "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
        "year": 2019,
        "kind": "paper",
        "license": "not stated on the page read"
      }
    },
    {
      "benchmark": "electron_mobility",
      "label": "Carrier mobility, beta-Ga2O3",
      "value": 300,
      "bound": "exact",
      "unit": "cm2/(V·s)",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "temperature": "not stated"
      },
      "method": "Value printed in Table 1 of the review",
      "status": "ground",
      "note": "The abstract gives an intrinsic limit of 250 cm2/(V·s), which differs from this table value.",
      "source": "jos-ga2o3-review",
      "where": "Table 1 (material parameters), row Carrier mobility",
      "source_detail": {
        "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
        "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
        "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
        "year": 2019,
        "kind": "paper",
        "license": "not stated on the page read"
      }
    },
    {
      "benchmark": "dielectric_constant",
      "value": 11,
      "bound": "exact",
      "unit": "-",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "temperature": "not stated"
      },
      "method": "Value printed in Table 1 of the review (dimensionless)",
      "status": "ground",
      "source": "jos-ga2o3-review",
      "where": "Table 1 (material parameters), row Dielectric constant",
      "source_detail": {
        "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
        "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
        "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
        "year": 2019,
        "kind": "paper",
        "license": "not stated on the page read"
      }
    },
    {
      "benchmark": "thermal_conductivity",
      "label": "Thermal conductivity, beta-Ga2O3 (range)",
      "value": 10,
      "value_high": 30,
      "bound": "range",
      "unit": "W/mK",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "temperature": "not stated"
      },
      "method": "Range printed in Table 1 of the review",
      "status": "ground",
      "source": "jos-ga2o3-review",
      "where": "Table 1 (material parameters), row Thermal conductivity",
      "source_detail": {
        "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
        "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
        "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
        "year": 2019,
        "kind": "paper",
        "license": "not stated on the page read"
      }
    },
    {
      "benchmark": "saturation_velocity",
      "label": "Saturation velocity, beta-Ga2O3",
      "value": 2,
      "bound": "exact",
      "unit": "10^7 cm/s",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "temperature": "not stated"
      },
      "method": "Value printed in Table 1 of the review, in the unit the table prints",
      "status": "ground",
      "source": "jos-ga2o3-review",
      "where": "Table 1 (material parameters), row Saturation velocity (vsat)",
      "source_detail": {
        "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
        "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
        "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
        "year": 2019,
        "kind": "paper",
        "license": "not stated on the page read"
      }
    },
    {
      "benchmark": "baliga_figure_of_merit",
      "label": "Baliga figure of merit relative to silicon",
      "value": 3200,
      "bound": "exact",
      "unit": "-",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "basis": "ratio to silicon, where silicon equals 1; not an absolute figure",
        "temperature": "not stated"
      },
      "method": "Ratio printed in Table 1 of the review",
      "status": "ground",
      "note": "The abstract describes this figure of merit as more than 3000 relative to silicon, which is consistent with the table value.",
      "source": "jos-ga2o3-review",
      "where": "Table 1 (material parameters), row Baliga FOM (epsilon mu Ec^3), relative to Si",
      "source_detail": {
        "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
        "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
        "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
        "year": 2019,
        "kind": "paper",
        "license": "not stated on the page read"
      }
    },
    {
      "benchmark": "density",
      "label": "Relative density, gallium(III) oxide powder",
      "value": 5.88,
      "bound": "exact",
      "unit": "g/mL",
      "scope": "material",
      "conditions": {
        "form": "powder, white (Aldrich product 215066)",
        "temperature": "25 °C"
      },
      "method": "Relative density printed in Section 9.1 of the supplier SDS; a supplier value for the powder, not a crystal measurement",
      "status": "ground",
      "note": "The SDS gives 5.88 g/mL for the powder. No density for a single beta-Ga2O3 crystal is printed in any source read in this run.",
      "source": "aldrich-215066-sds",
      "where": "Section 9.1 (physical and chemical properties), item m, relative density",
      "source_detail": {
        "title": "Safety Data Sheet, Gallium(III) oxide, Aldrich product 215066 (Version 4.3)",
        "id": "Aldrich 215066, CAS 12024-21-4; revision date 06/25/2014, print date 01/15/2016 (as printed)",
        "url": "https://www.physics.purdue.edu/primelab/safety/MSDS/SDS/gallium%20(III)%20oxide%20%20-%20Aldrich.pdf",
        "year": 2014,
        "kind": "datasheet",
        "license": "not stated on the document"
      }
    },
    {
      "benchmark": "johnson_figure_of_merit",
      "label": "Johnson figure of merit relative to silicon, beta-Ga2O3",
      "value": 2844,
      "bound": "exact",
      "unit": "-",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "basis": "ratio to silicon, where silicon equals 1",
        "temperature": "not stated"
      },
      "method": "Ratio printed in Table 1 of the review, Johnson FOM row",
      "status": "ground",
      "source": "jos-ga2o3-review",
      "where": "Table 1, FOM relative to Si section, row Johnson FOM",
      "source_detail": {
        "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
        "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
        "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
        "year": 2019,
        "kind": "paper",
        "license": "not stated on the page read"
      }
    },
    {
      "benchmark": "baliga_high_frequency_figure_of_merit",
      "label": "Baliga high-frequency figure of merit relative to silicon, beta-Ga2O3",
      "value": 142,
      "bound": "exact",
      "unit": "-",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "basis": "ratio to silicon, where silicon equals 1",
        "temperature": "not stated"
      },
      "method": "Ratio printed in Table 1 of the review, Baliga High Frequency FOM row",
      "status": "ground",
      "source": "jos-ga2o3-review",
      "where": "Table 1, FOM relative to Si section, row Baliga High Frequency FOM",
      "source_detail": {
        "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
        "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
        "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
        "year": 2019,
        "kind": "paper",
        "license": "not stated on the page read"
      }
    },
    {
      "benchmark": "keyes_figure_of_merit",
      "label": "Keyes figure of merit relative to silicon, beta-Ga2O3",
      "value": 0.2,
      "bound": "exact",
      "unit": "-",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "basis": "ratio to silicon, where silicon equals 1",
        "temperature": "not stated"
      },
      "method": "Ratio printed in Table 1 of the review, Keyes FOM row",
      "status": "ground",
      "source": "jos-ga2o3-review",
      "where": "Table 1, FOM relative to Si section, row Keyes FOM",
      "source_detail": {
        "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
        "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
        "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
        "year": 2019,
        "kind": "paper",
        "license": "not stated on the page read"
      }
    },
    {
      "benchmark": "thermal_conductivity",
      "label": "Thermal conductivity, beta-Ga2O3 along [100], room temperature",
      "value": 10.9,
      "bound": "exact",
      "unit": "W/mK",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "direction": "[100]",
        "temperature": "room temperature"
      },
      "method": "Time-domain thermoreflectance on single crystals; value printed in the abstract",
      "status": "ground",
      "note": "Printed as 10.9 ± 1.0 W/mK. The ± 1.0 is the uncertainty the paper prints.",
      "source": "guo-2014-tc",
      "where": "Abstract",
      "source_detail": {
        "title": "Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide (Guo et al.)",
        "id": "arXiv:1412.7472",
        "url": "https://arxiv.org/abs/1412.7472",
        "year": 2014,
        "kind": "paper",
        "license": "arXiv (see the paper page)"
      }
    },
    {
      "benchmark": "thermal_conductivity",
      "label": "Thermal conductivity, beta-Ga2O3 along [010], room temperature",
      "value": 27,
      "bound": "exact",
      "unit": "W/mK",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "direction": "[010]",
        "temperature": "room temperature"
      },
      "method": "Time-domain thermoreflectance on single crystals; value printed in the abstract",
      "status": "ground",
      "note": "Printed as 27.0 ± 2.0 W/mK. The ± 2.0 is the uncertainty the paper prints.",
      "source": "guo-2014-tc",
      "where": "Abstract",
      "source_detail": {
        "title": "Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide (Guo et al.)",
        "id": "arXiv:1412.7472",
        "url": "https://arxiv.org/abs/1412.7472",
        "year": 2014,
        "kind": "paper",
        "license": "arXiv (see the paper page)"
      }
    },
    {
      "benchmark": "thermal_conductivity",
      "label": "Thermal conductivity, beta-Ga2O3 along [100], room temperature, 3 omega method",
      "value": 13,
      "bound": "exact",
      "unit": "W/mK",
      "scope": "material",
      "conditions": {
        "polymorph": "beta-Ga2O3",
        "direction": "[100]",
        "temperature": "room temperature",
        "crystal": "Czochralski-grown bulk crystals, Mg-doped and undoped"
      },
      "method": "Electrical 3 omega method on bulk crystals; value printed in the abstract",
      "status": "ground",
      "note": "Printed as 13 ± 1 W/mK, the uncertainty the paper prints. It is a second method on a different crystal set from the TDTR values above.",
      "source": "handwerg-2014-tc",
      "where": "Abstract",
      "source_detail": {
        "title": "Temperature-dependent thermal conductivity in Mg-doped and undoped beta-Ga2O3 bulk-crystals (Handwerg et al.)",
        "id": "arXiv:1407.4272",
        "url": "https://arxiv.org/abs/1407.4272",
        "year": 2014,
        "kind": "paper",
        "license": "arXiv (see the paper page)"
      }
    }
  ],
  "corrosion": [],
  "risks": {
    "hazards": [
      {
        "text": "Aldrich supplier SDS for gallium(III) oxide, product 215066 (Version 4.3): Sections 2.1 and 2.2 read 'Not a hazardous substance or mixture.' with no GHS label elements.",
        "ghs": [],
        "source": "aldrich-215066-sds",
        "where": "Sections 2.1 and 2.2"
      },
      {
        "text": "ChemicalBook supplier SDS for CAS 12024-21-4 (revision date printed 2026-08-15) prints the hazard statements H315 (causes skin irritation), H319 (causes serious eye irritation) and H335 (may cause respiratory irritation), with the signal word Warning and precautionary statements P261, P271 and P280. This conflicts with the Aldrich SDS, so both are kept.",
        "ghs": [
          "H315",
          "H319",
          "H335"
        ],
        "source": "chemicalbook-ga2o3-sds",
        "where": "GHS hazard statements and precautionary statements block"
      }
    ],
    "failure_risks": [
      {
        "mode": "Reaction with strong oxidizing agents",
        "trigger": "Contact with strong oxidizing agents, which the Aldrich SDS lists as incompatible",
        "consequence": "The SDS gives no reaction products or rates: reactivity and hazardous reactions are 'no data available'.",
        "source": "aldrich-215066-sds",
        "where": "Sections 10.1, 10.3 and 10.5"
      },
      {
        "mode": "Fire",
        "trigger": "Exposure to a fire",
        "consequence": "The SDS says the product does not burn and lists gallium oxides as the special fire hazard. Flash point is 'not applicable'.",
        "source": "aldrich-215066-sds",
        "where": "Sections 3.1, 5.2, 5.4 and 9.1 (flash point)"
      }
    ],
    "side_effects": [],
    "handling": [
      {
        "text": "Aldrich SDS: provide exhaust ventilation where dust forms, avoid dust formation, keep the container tightly closed in a dry and well-ventilated place, and do not let the product enter drains. Wear gloves and eye protection.",
        "source": "aldrich-215066-sds",
        "where": "Sections 6.1, 6.2, 7.1, 7.2 and 8.2"
      }
    ],
    "mitigations": []
  },
  "uses": [
    {
      "application": "electronics-and-chips",
      "device": "Field-plated MOSFET (research device in the review)",
      "example": "The review reports a field-plated MOSFET with a breakdown voltage of 1850 V (Fig. 11).",
      "source": "jos-ga2o3-review",
      "where": "Figure 11 caption"
    },
    {
      "application": "electronics-and-chips",
      "device": "GOOI FET (research device in the review)",
      "example": "The review reports GOOI FETs with an on/off ratio of 10^10 and a maximum drain current of 1.5 A/mm in depletion mode and 1.0 A/mm in enhancement mode (Fig. 21).",
      "source": "jos-ga2o3-review",
      "where": "Figure 21 caption"
    }
  ],
  "supply": [
    {
      "subject": "Gallium (the metal from which Ga2O3 is made)",
      "abundance": "Average gallium content of bauxite is 50 parts per million (USGS, World Resources)",
      "producers": [
        {
          "country": "China",
          "share_percent": 99,
          "year": 2025
        }
      ],
      "critical_lists": [
        {
          "list": "USGS 2025 List of Critical Minerals (described as used in semiconductors; no strategic designation printed)",
          "listed": true
        },
        {
          "list": "EU critical raw materials list (Regulation (EU) 2024/1252, fifth list of 34 critical raw materials)",
          "listed": true
        }
      ],
      "recycling": "USGS: old scrap none. Substantial new scrap from GaAs device manufacture is reprocessed to recover high-purity gallium at one facility in New York.",
      "substitutes": [],
      "source": "usgs-mcs2026-gallium",
      "where": "Gallium chapter, Events, Trends, and Issues (China 99% of primary low-purity gallium production); World Resources (bauxite content); Recycling. The year for the 99% share is not printed in that sentence; 2025 is the year of the chapter's own production table."
    }
  ],
  "media": [],
  "documents": [
    {
      "title": "A review of the most recent progresses of state-of-art gallium oxide power devices (Journal of Semiconductors 40(1), 011803)",
      "type": "paper",
      "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
      "year": 2019
    },
    {
      "title": "USGS Mineral Commodity Summaries 2026: Gallium",
      "type": "report",
      "url": "https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-gallium.pdf",
      "year": 2026
    },
    {
      "title": "Safety Data Sheet, Gallium(III) oxide, Aldrich product 215066 (Version 4.3)",
      "type": "sds",
      "url": "https://www.physics.purdue.edu/primelab/safety/MSDS/SDS/gallium%20(III)%20oxide%20%20-%20Aldrich.pdf",
      "year": 2014
    },
    {
      "title": "Chemical Safety Data Sheet MSDS / SDS, gallium(III) oxide (ChemicalBook)",
      "type": "sds",
      "url": "https://www.chemicalbook.com/msds/galliumiiioxide.htm",
      "year": 2026
    },
    {
      "title": "Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide (arXiv:1412.7472)",
      "type": "paper",
      "url": "https://arxiv.org/abs/1412.7472",
      "year": 2014
    },
    {
      "title": "Temperature-dependent thermal conductivity in Mg-doped and undoped beta-Ga2O3 bulk-crystals (arXiv:1407.4272)",
      "type": "paper",
      "url": "https://arxiv.org/abs/1407.4272",
      "year": 2014
    }
  ],
  "gaps": [
    "No oxidation, corrosion or ageing rate for beta-Ga2O3 was found in a source read in this run. The review covers material parameters and devices only. The Aldrich SDS gives only the incompatibility with strong oxidizing agents and storage stability ('Stable under recommended storage conditions').",
    "No radiation, vacuum, atomic-oxygen or flight result was found. The Wikipedia article says the material is 'thought to be radiation-hard' but gives no numbers, so nothing is taken from it.",
    "Melting point is not printed in any source read in this run. The Aldrich SDS says 'no data available' and the 2024 IJMMM review page prints no value. The Wikipedia infobox prints a melting point of 1,725 °C from a handbook, but Wikipedia is used here for composition only, so it is not entered. Density of a single crystal is not found; the only density entered is the supplier SDS relative density of the powder.",
    "Crystal structure (monoclinic, space group C2/m) is on Wikipedia only and is left out under the composition-only rule for that source.",
    "PubChem returned a reCAPTCHA page and American Elements returned HTTP 403, so no PubChem GHS record was read. The two supplier SDS sources read disagree on classification (Aldrich: not hazardous; ChemicalBook: H315, H319, H335). Both are kept.",
    "Supply shares are for gallium metal from the USGS chapter. No country share for gallium oxide itself was found.",
    "Test temperatures for the band gap, mobility, dielectric constant and thermal conductivity are not stated in the review.",
    "Band gap, breakdown field, electron mobility, saturation velocity and Baliga figure of merit are not in property-canon.yaml. They were added as snake_case names (band_gap, breakdown_field, electron_mobility, saturation_velocity, baliga_figure_of_merit). The Johnson, Baliga high-frequency and Keyes figures of merit were added the same way (johnson_figure_of_merit, baliga_high_frequency_figure_of_merit, keyes_figure_of_merit).",
    "A second source for the band gap, mobility or breakdown field could not be read: the web search budget for this turn ran out, so only the 2019 review and the Wikipedia identifiers were used."
  ],
  "story": {
    "why": "Beta-gallium oxide (beta-Ga2O3) is an ultra-wide-bandgap semiconductor. The 2019 review in Journal of Semiconductors gives a band gap of 4.8 eV and an estimated breakdown field of 8 MV/cm. Its Baliga figure of merit is printed as 3200 relative to silicon, which the review uses as a guide to power-device performance. The review also notes that melt-grown substrates could be lower cost. No space or radiation test is taken from the sources read here.",
    "uses": [
      {
        "where": "Power transistors (research devices)",
        "line": "The review reports a field-plated MOSFET with a breakdown voltage of 1850 V, and GOOI FETs with an on/off ratio of 10^10. These are laboratory devices described in the review, not commercial parts."
      }
    ],
    "can_do": [
      {
        "label": "Band gap",
        "line": "The review gives a band gap of 4.8 eV in Table 1. The abstract gives a range of 4.5 to 4.8 eV.",
        "benchmark": "band_gap",
        "scope": "material",
        "value": "4.8 eV"
      },
      {
        "label": "Electron mobility",
        "line": "The review gives a carrier mobility of 300 cm2/(V·s) in Table 1. The abstract gives an intrinsic limit of 250 cm2/(V·s).",
        "benchmark": "electron_mobility",
        "scope": "material",
        "value": "300 cm2/(V·s)"
      },
      {
        "label": "Thermal conductivity",
        "line": "Table 1 of the review gives a thermal conductivity of 10 to 30 W/mK, with no test temperature stated.",
        "benchmark": "thermal_conductivity",
        "scope": "material",
        "value": "10 to 30 W/mK"
      }
    ],
    "compare": "Table 1 of the review also prints values for silicon, GaAs, 4H-SiC, GaN and diamond. Only the beta-Ga2O3 column is entered in this profile. The Baliga figure of merit relative to silicon is 3200 in Table 1 and more than 3000 in the abstract.",
    "compare_rows": [
      {
        "label": "Band gap",
        "benchmark": "band_gap",
        "scope": "material"
      },
      {
        "label": "Electron mobility",
        "benchmark": "electron_mobility",
        "scope": "material"
      },
      {
        "label": "Thermal conductivity",
        "benchmark": "thermal_conductivity",
        "scope": "material"
      }
    ],
    "handling": [
      "Aldrich SDS (product 215066): provide exhaust ventilation where dust forms, avoid dust formation, keep the container tightly closed in a dry and well-ventilated place, and do not let the product enter drains. The SDS is an older version, so check the current sheet for the lot you have."
    ],
    "good_for": [
      "Power switching where a 4.8 eV band gap and an estimated 8 MV/cm breakdown field matter, per the 2019 review.",
      "Power device research where the review's Baliga figure of merit, 3200 relative to silicon, is the target."
    ],
    "watch_out": [
      "Thermal conductivity of 10 to 30 W/mK in Table 1, with no test temperature stated.",
      "The review's abstract and Table 1 disagree on electron mobility, 250 against 300 cm2/(V·s).",
      "Most device figures in the review are for laboratory devices, not production parts."
    ],
    "verdict": "Beta-Ga2O3 has a wide band gap of 4.8 eV and an estimated breakdown field of 8 MV/cm in the 2019 review. This profile has no corrosion, radiation or space data, so no space verdict is possible from it.",
    "recipe": {
      "line": "Beta-Ga2O3 is gallium(III) oxide, a compound of two gallium atoms and three oxygen atoms. The 2019 review names the stable form beta-Ga2O3.",
      "parts": [
        {
          "name": "Gallium",
          "symbol": "Ga",
          "role": "The metal cation in the oxide. The review gives no process route for the Ga2O3 crystal, so none is described here."
        },
        {
          "name": "Oxygen",
          "symbol": "O",
          "role": "Bonded to the gallium atoms in the oxide lattice. Oxygen content sets the stoichiometry of the compound."
        }
      ]
    },
    "risk_groups": [
      {
        "title": "For people",
        "lead": "Two supplier safety data sheets for gallium(III) oxide disagree. The Aldrich sheet (product 215066) lists no classification, and the ChemicalBook sheet prints the hazard statements H315, H319 and H335.",
        "points": [
          {
            "label": "Check the supplier sheet",
            "line": "PubChem returned a reCAPTCHA page and American Elements returned an access error. Check the safety data sheet for the lot you handle before handling powder or wafers."
          }
        ],
        "verdict": "Sources conflict"
      }
    ]
  },
  "updated": "2026-11-01",
  "review": {
    "status": "draft",
    "method": "assistant",
    "checked_values": 15,
    "unreachable": 4,
    "caveats": 3,
    "note": "Written by an AI assistant on 2026-11-01 and deepened the same day from pages read in this run. Eight property values come from the 2019 review; the density comes from a supplier SDS, and two thermal conductivity values come from arXiv:1412.7472 and one from arXiv:1407.4272. PubChem (reCAPTCHA page), American Elements (HTTP 403), MDPI and NSF PAR (blocked) could not be read. Values have not been re-checked by a second reader."
  },
  "sources": {
    "jos-ga2o3-review": {
      "title": "A review of the most recent progresses of state-of-art gallium oxide power devices",
      "id": "doi:10.1088/1674-4926/40/1/011803 (Journal of Semiconductors 40(1), 011803; authors Hong Zhou et al.)",
      "url": "https://www.jos.ac.cn/en/article/doi/10.1088/1674-4926/40/1/011803",
      "year": 2019,
      "kind": "paper",
      "license": "not stated on the page read"
    },
    "wiki-ga2o3": {
      "title": "Gallium(III) oxide (Wikipedia, identifiers box)",
      "id": "CAS 12024-21-4",
      "url": "https://en.wikipedia.org/wiki/Gallium(III)_oxide",
      "year": 2026,
      "kind": "web",
      "license": "CC BY-SA (Wikipedia)"
    },
    "usgs-mcs2026-gallium": {
      "title": "Mineral Commodity Summaries 2026, Gallium",
      "id": "USGS MCS 2026, February 2026",
      "url": "https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-gallium.pdf",
      "year": 2026,
      "kind": "report",
      "license": "public domain (USGS)"
    },
    "usgs-crit2025": {
      "title": "About the 2025 List of Critical Minerals (USGS, final list of 60 minerals)",
      "id": "Final 2025 List of Critical Minerals, November 2025",
      "url": "https://www.usgs.gov/programs/mineral-resources-program/science/about-2025-list-critical-minerals",
      "year": 2025,
      "kind": "web",
      "license": "public domain (USGS)"
    },
    "ec-crm": {
      "title": "Critical raw materials (European Commission, list of 34 critical raw materials under Regulation (EU) 2024/1252)",
      "id": "Regulation (EU) 2024/1252",
      "url": "https://single-market-economy.ec.europa.eu/sectors/raw-materials/areas-specific-interest/critical-raw-materials_en",
      "year": 2024,
      "kind": "web",
      "license": "European Commission web page"
    },
    "aldrich-215066-sds": {
      "title": "Safety Data Sheet, Gallium(III) oxide, Aldrich product 215066 (Version 4.3)",
      "id": "Aldrich 215066, CAS 12024-21-4; revision date 06/25/2014, print date 01/15/2016 (as printed)",
      "url": "https://www.physics.purdue.edu/primelab/safety/MSDS/SDS/gallium%20(III)%20oxide%20%20-%20Aldrich.pdf",
      "year": 2014,
      "kind": "datasheet",
      "license": "not stated on the document"
    },
    "chemicalbook-ga2o3-sds": {
      "title": "Chemical Safety Data Sheet MSDS / SDS, gallium(III) oxide (ChemicalBook)",
      "id": "CAS 12024-21-4; revision date 2026-08-15 (as printed)",
      "url": "https://www.chemicalbook.com/msds/galliumiiioxide.htm",
      "year": 2026,
      "kind": "datasheet",
      "license": "not stated on the page read"
    },
    "guo-2014-tc": {
      "title": "Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide (Guo et al.)",
      "id": "arXiv:1412.7472",
      "url": "https://arxiv.org/abs/1412.7472",
      "year": 2014,
      "kind": "paper",
      "license": "arXiv (see the paper page)"
    },
    "handwerg-2014-tc": {
      "title": "Temperature-dependent thermal conductivity in Mg-doped and undoped beta-Ga2O3 bulk-crystals (Handwerg et al.)",
      "id": "arXiv:1407.4272",
      "url": "https://arxiv.org/abs/1407.4272",
      "year": 2014,
      "kind": "paper",
      "license": "arXiv (see the paper page)"
    }
  },
  "license": "CC-BY-4.0",
  "url": "https://spacemushroom.com/profiles/gallium-oxide/"
}