{ "spore": "profile", "id": "egain", "spore_version": "0.2", "family": "low-melting-metals-and-solders", "name": "Eutectic gallium-indium (EGaIn)", "abbreviation": "EGaIn", "role": "liquid-metal conductor for stretchable electronics", "category": "metals", "type": "heavy-metals", "summary": "Eutectic gallium-indium (EGaIn) is a liquid metal alloy of gallium and indium, written as 75.5 % Ga and 24.5 % In by weight in Table 1 of a 2021 review. Its melting point is 15.5 °C in that table and 15.7 °C on a vendor product page. The review gives a thermal conductivity of 26.4 W/m.K for EGaIn. A 2012 study of oxidised EGaIn gives a density of 6.25 g/ml at 50 °C and a pure-liquid surface tension of 445 mN/m. The review says air forms a self-passivating Ga2O3 skin about 0.5 to 3 nm thick on Ga-based liquid metals.\n", "best_for": "Liquid-metal conductors that must stay liquid at room temperature, such as stretchable circuits and liquid-metal-embedded elastomers", "weakest_at": "Oxide skin: the Ga2O3 film forms in air and adds a yield stress to the liquid, so flow and droplet shape depend on the oxide", "identity": { "formula": "GaIn: gallium-indium eutectic, about 75.5 % Ga and 24.5 % In by weight in the review", "designations": [ { "system": "Trade name", "code": "EGaIn", "source": "alizadeh-2021", "where": "Introduction, sentence naming Eutectic Gallium-Indium (EGaIn), and Table 1 row label" } ], "source": "alizadeh-2021", "where": "Table 1, Eutectic Gallium-Indium row (75.5% Ga, 24.5% In, weight basis). Formula GaIn also printed on the PubChem record for CID 16213646 and on the ProChem product 1880 page." }, "tags": { "environments": [], "stresses": [], "applications": [ "electronics-and-chips" ] }, "properties": [ { "benchmark": "density", "label": "Density of EGaIn in the liquid state (2012 study)", "value": 6.25, "bound": "exact", "unit": "g/ml", "scope": "material", "conditions": { "temperature": "50 °C, liquid state (the test temperature the paper gives for its measurements)", "composition": "77 % Ga with 23 % In as mixed by the authors; the weight or atomic basis is not stated" }, "method": "Value given in the experimental section of the paper, as printed in the authors' text", "status": "ground", "note": "The same paper mixes 77 % Ga with 23 % In, while the review's Table 1 gives 75.5 % Ga and 24.5 % In by weight.", "source": "arxiv-1201-4828", "where": "Experimental section, paragraph after Fig. 1 (eGaIn has a density of 6.25 g/ml)", "source_detail": { "title": "Effect of oxidation on the Mechanical Properties of Liquid Gallium and Eutectic Gallium-Indium (Xu, Oudalov, Guo, Jaeger and Brown)", "id": "arXiv 1201.4828", "url": "https://arxiv.org/pdf/1201.4828", "year": 2012, "kind": "paper", "license": "cited, not reproduced" } }, { "benchmark": "surface_tension", "label": "Pure-liquid surface tension of EGaIn (fit with the oxide term removed)", "value": 445, "bound": "exact", "unit": "mN/m", "scope": "material", "conditions": { "basis": "fitted surface tension of the pure liquid (gamma 0) after the oxide-skin term is removed from the pendant-drop model", "method_detail": "pendant drop in hydrochloric acid baths of varying concentration", "temperature": "not stated in this passage" }, "method": "Fit of the authors' effective surface tension model to pendant-drop data", "status": "ground", "note": "Printed as 445 ± 19 mN/m, the paper's own fit uncertainty.", "source": "arxiv-1201-4828", "where": "Pendant-drop results, paragraph containing the gamma 0 (eGaIn) fit", "source_detail": { "title": "Effect of oxidation on the Mechanical Properties of Liquid Gallium and Eutectic Gallium-Indium (Xu, Oudalov, Guo, Jaeger and Brown)", "id": "arXiv 1201.4828", "url": "https://arxiv.org/pdf/1201.4828", "year": 2012, "kind": "paper", "license": "cited, not reproduced" } }, { "benchmark": "surface_tension", "label": "Literature surface tension of eGaIn quoted by the 2012 study", "value": 444, "bound": "exact", "unit": "mN/m", "scope": "material", "conditions": { "basis": "literature value the authors cite for eGaIn", "temperature": "not stated" }, "method": "Value quoted in the authors' comparison with the literature", "status": "ground", "source": "arxiv-1201-4828", "where": "Pendant-drop results, same paragraph as the gamma 0 fit, literature values in brackets", "source_detail": { "title": "Effect of oxidation on the Mechanical Properties of Liquid Gallium and Eutectic Gallium-Indium (Xu, Oudalov, Guo, Jaeger and Brown)", "id": "arXiv 1201.4828", "url": "https://arxiv.org/pdf/1201.4828", "year": 2012, "kind": "paper", "license": "cited, not reproduced" } }, { "benchmark": "melting_point", "label": "Melting point of EGaIn (review Table 1)", "value": 15.5, "bound": "exact", "unit": "°C", "scope": "material", "conditions": { "composition": "75.5 % Ga, 24.5 % In by weight, as printed in Table 1" }, "method": "Printed in Table 1 of the review, which cites its references 1 and 17", "status": "ground", "source": "alizadeh-2021", "where": "Table 1, Eutectic Gallium-Indium row, melting temperature column", "source_detail": { "title": "Robust and Multifunctional Liquid-Metal Embedded Elastomers for Ultrastretchable Electronics: a Short Review", "id": "arXiv 2104.07327", "url": "https://arxiv.org/pdf/2104.07327", "year": 2021, "kind": "paper", "license": "cited, not reproduced" } }, { "benchmark": "melting_point", "label": "Melting point of EGaIn (ProChem product 1880)", "value": 15.7, "bound": "exact", "unit": "°C", "scope": "material", "conditions": { "grade": "Gallium-indium eutectic, product 1880, purity 99.999% as printed", "composition": "formula GaIn printed, no weight or atomic percentage printed" }, "method": "Vendor product page, Information section", "status": "ground", "source": "prochem-1880", "where": "Information section, sentence giving a melting point of 15.7 °C", "source_detail": { "title": "Gallium-indium eutectic, product 1880 (ProChem Online product page)", "id": "ProChem Online product 1880", "url": "https://prochemonline.com/product/galliumindiumeutectic-1880", "year": 2026, "kind": "web", "license": "vendor page, cited not reproduced" } }, { "benchmark": "thermal_conductivity", "label": "Thermal conductivity of EGaIn (review Table 1)", "value": 26.4, "bound": "exact", "unit": "W/m.K", "scope": "material", "conditions": { "composition": "75.5 % Ga, 24.5 % In by weight", "temperature": "not stated" }, "method": "Printed in the EGaIn row of Table 1 as 26.4 W/m.K", "status": "ground", "source": "alizadeh-2021", "where": "Table 1, Eutectic Gallium-Indium row, thermal conductivity column", "source_detail": { "title": "Robust and Multifunctional Liquid-Metal Embedded Elastomers for Ultrastretchable Electronics: a Short Review", "id": "arXiv 2104.07327", "url": "https://arxiv.org/pdf/2104.07327", "year": 2021, "kind": "paper", "license": "cited, not reproduced" } }, { "benchmark": "oxide_layer_thickness", "label": "Ga2O3 oxide skin thickness on Ga-based liquid metals (review range)", "value": 0.5, "value_high": 3, "bound": "range", "unit": "nm", "scope": "material", "conditions": { "environment": "air or oxygen-saturated elastomer at room temperature", "basis": "range the review gives for the Ga2O3 skin on Ga-based liquid metals, which include EGaIn; not a measured EGaIn value" }, "method": "Range quoted in the introduction of the review", "status": "ground", "source": "alizadeh-2021", "where": "Introduction, paragraph on the self-passivating Ga2O3 oxide layer", "source_detail": { "title": "Robust and Multifunctional Liquid-Metal Embedded Elastomers for Ultrastretchable Electronics: a Short Review", "id": "arXiv 2104.07327", "url": "https://arxiv.org/pdf/2104.07327", "year": 2021, "kind": "paper", "license": "cited, not reproduced" } }, { "benchmark": "band_gap", "label": "Band gap of the Ga2O3 oxide skin (quoted in the review)", "value": 4.85, "bound": "exact", "unit": "eV", "scope": "material", "conditions": { "basis": "approximately 4.85eV as printed for the n-type Ga2O3 semiconductor, not for the alloy itself" }, "method": "Value quoted in the introduction of the review", "status": "ground", "note": "Describes the oxide skin, not the metal. Included because the review gives it with the oxide layer.", "source": "alizadeh-2021", "where": "Introduction, paragraph on the self-passivating Ga2O3 oxide layer", "source_detail": { "title": "Robust and Multifunctional Liquid-Metal Embedded Elastomers for Ultrastretchable Electronics: a Short Review", "id": "arXiv 2104.07327", "url": "https://arxiv.org/pdf/2104.07327", "year": 2021, "kind": "paper", "license": "cited, not reproduced" } } ], "corrosion": [ { "environment": "Air or oxygen at room temperature", "headline": "A thin Ga2O3 skin forms on EGaIn in air, about 0.5 to 3 nm thick, according to the review.", "effect": "The review says the skin lowers the surface tension of droplets and acts as an elastic membrane until the surface stress exceeds a critical value it prints as 0.5–0.6 N/m-1. The skin breaks and reforms at once. The review gives no corrosion rate for EGaIn.", "rating": "low", "conditions": { "basis": "literature statement for Ga-based liquid metals; the review runs no EGaIn test", "exposure": "air or oxygen-saturated elastomers" }, "source": "alizadeh-2021", "where": "Introduction, paragraph on the self-passivating Ga2O3 oxide layer" }, { "environment": "Oxidised EGaIn in pendant-drop tests, compared with the oxide-free limit", "headline": "The oxide skin raises the apparent surface tension and adds a yield stress to EGaIn.", "effect": "The authors show that an oxide layer adds a size-dependent effective surface tension and a yield stress. In the limit of large hydrochloric acid concentration the effective tension reduces to the surface tension of the pure liquid, which their fit gives as 445 mN/m for EGaIn.", "rating": "moderate", "conditions": { "basis": "pendant-drop and rheometer tests in hydrochloric acid baths of varying concentration", "temperature": "50 °C for the paper's mechanical measurements" }, "source": "arxiv-1201-4828", "where": "Pendant-drop results, discussion of Eqn. 5 and the limit of large acid concentration" } ], "risks": { "hazards": [], "failure_risks": [ { "mode": "Oxide skin adds yield stress to the liquid", "trigger": "Oxidised EGaIn in air, with the Ga2O3 skin intact", "consequence": "The authors attribute the larger, size-dependent effective surface tension in pendant-drop tests to the yield stress of the oxidised liquid, so an intact oxide film changes droplet shape and flow compared with the pure metal.", "severity": "moderate", "source": "arxiv-1201-4828", "where": "Pendant-drop results, paragraph on the yield stress of oxidised liquid metals" }, { "mode": "Oxide skin breaks under high surface stress", "trigger": "Surface stress above the critical value the review prints as 0.5–0.6 N/m-1", "consequence": "The skin breaks and reforms at once, so printed or moulded droplets hold their shape. The review treats this as useful for printing and moulding, so the severity is low.", "severity": "low", "source": "alizadeh-2021", "where": "Introduction, paragraph on the self-passivating Ga2O3 oxide layer" } ], "side_effects": [], "handling": [ { "text": "The 2012 study prepared the alloy in a quartz tube with argon gas cycled through the tube to inhibit oxidation.", "source": "arxiv-1201-4828", "where": "Experimental section, paragraph on producing eGaIn" }, { "text": "The 2012 study used hydrochloric acid of varying concentration to control the oxide layer in its tests.", "source": "arxiv-1201-4828", "where": "Experimental section, sentence on the acid bath" } ], "mitigations": [ { "text": "The authors use hydrochloric acid baths to control the oxide. At large acid concentration the effective surface tension reduces to that of the pure liquid.", "source": "arxiv-1201-4828", "where": "Pendant-drop results, discussion of Eqn. 5" } ] }, "uses": [ { "application": "electronics-and-chips", "device": "Liquid-metal-embedded elastomers for stretchable electronics", "example": "The review names eutectic Ga-In (EGaIn) and Ga-In-Sn (Galinstan) as popular liquid-metal alloys for liquid-metal-embedded elastomers used in stretchable electronics.", "source": "alizadeh-2021", "where": "Introduction, paragraph on Ga-based alloys in LMEEs" }, { "application": "electronics-and-chips", "device": "Stretchable circuit with liquid metal injected into elastomer microchannels", "example": "The review's Figure 12 shows the injection route: a mould is cast in elastomer, the elastomer is sealed, GaIn is injected into the microchannels, and external copper wires are inserted.", "source": "alizadeh-2021", "where": "Figure 12 caption (injection filling, steps e and f)" }, { "application": "electronics-and-chips", "device": "LMEE-based nanotriboelectric power source for wearable electronics", "example": "The review lists an LMEE-based nanotriboelectric device for renewable power supply for wearable electronics. The sentence does not name the alloy.", "source": "alizadeh-2021", "where": "Section on wearable electronics applications, sentence citing reference 21" } ], "supply": [ { "subject": "Gallium", "abundance": "USGS: the average gallium content of bauxite is 50 parts per million.", "producers": [ { "country": "China", "share_percent": 99, "year": 2025 } ], "critical_lists": [], "recycling": "USGS: old scrap, none. Substantial quantities of new scrap from GaAs-based device manufacture were reprocessed to high-purity gallium at one facility in New York.", "substitutes": [ "USGS: substitutes exist for GaAs and GaN in some applications; the chapter does not discuss liquid-metal alloy uses." ], "source": "usgs-mcs2026-gallium", "where": "Events, Trends, and Issues (China 99% of worldwide primary low-purity gallium production; year is the report year 2025); Bauxite paragraph (50 parts per million); Recycling line; Substitutes line" }, { "subject": "Gallium metal imports to the United States", "producers": [ { "country": "Canada", "share_percent": 28, "year": 2024 }, { "country": "Japan", "share_percent": 22, "year": 2024 }, { "country": "China", "share_percent": 18, "year": 2024 }, { "country": "Germany", "share_percent": 16, "year": 2024 } ], "critical_lists": [], "substitutes": [], "source": "usgs-mcs2026-gallium", "where": "Import Sources (2021-24) line, metal shares; the year is the end of the 2021 to 2024 period as printed" }, { "subject": "Indium", "producers": [ { "country": "China", "share_percent": 70, "year": 2025 } ], "critical_lists": [], "recycling": "USGS: indium is most commonly recovered from ITO scrap in Japan and the Republic of Korea; data on the quantity recovered were not available.", "substitutes": [ "USGS: antimony tin oxide, carbon nanotube coatings, PEDOT and copper or silver nanowires have been developed or explored as alternatives to ITO coatings." ], "source": "usgs-mcs2026-indium", "where": "Events, Trends, and Issues (China accounting for 70% of the world total); Recycling line; Substitutes line" }, { "subject": "Indium imports to the United States", "producers": [ { "country": "Republic of Korea", "share_percent": 25, "year": 2024 }, { "country": "Japan", "share_percent": 22, "year": 2024 }, { "country": "China", "share_percent": 12, "year": 2024 }, { "country": "Canada", "share_percent": 11, "year": 2024 } ], "critical_lists": [], "substitutes": [], "source": "usgs-mcs2026-indium", "where": "Import Sources (2021-24) line; the year is the end of the 2021 to 2024 period as printed" } ], "media": [], "documents": [ { "title": "Robust and Multifunctional Liquid-Metal Embedded Elastomers for Ultrastretchable Electronics: a Short Review (arXiv 2104.07327)", "type": "paper", "url": "https://arxiv.org/pdf/2104.07327", "year": 2021 }, { "title": "Effect of oxidation on the Mechanical Properties of Liquid Gallium and Eutectic Gallium-Indium (arXiv 1201.4828)", "type": "paper", "url": "https://arxiv.org/pdf/1201.4828", "year": 2012 }, { "title": "Gallium-indium eutectic, product 1880 (ProChem Online product page)", "type": "datasheet", "url": "https://prochemonline.com/product/galliumindiumeutectic-1880" }, { "title": "PubChem: Gallium Indium eutectic (CID 16213646), formula and identifiers only", "type": "database", "url": "https://pubchem.ncbi.nlm.nih.gov/compound/16213646" }, { "title": "USGS Mineral Commodity Summaries 2026: Gallium", "type": "report", "url": "https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-gallium.pdf", "year": 2026 }, { "title": "USGS Mineral Commodity Summaries 2026: Indium", "type": "report", "url": "https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-indium.pdf", "year": 2026 } ], "gaps": [ "No EGaIn safety data sheet or PubChem GHS classification was read in this run. The Sigma-Aldrich page timed out, the American Elements page returned HTTP 403, and the PubChem record for CID 16213646 has no GHS section. Hazards are left empty.", "Electrical conductivity is left out: the review's Table 1 prints 3.46 * 10^6 S/m, which is exponent notation.", "Viscosity is left out: the 2012 study prints nominal and measured values with exponents (for example 1.86 × 10−3 with a mN·s unit), which cannot be recorded in plain form.", "The surface tension column of Table 1 prints 624 with no unit, so it is not entered.", "The ProChem page prints a specific gravity of 6.25 with no unit, so it is not entered. The 2012 study's density of 6.25 g/ml is used instead.", "Composition conflicts: 75.5 % Ga with 24.5 % In by weight in the review, 77 % Ga with 23 % In with no basis stated in the 2012 study, and formula GaIn only on the ProChem page.", "The critical surface stress of 0.5–0.6 N/m-1 is quoted in prose only, because the review prints its unit as N/m-1.", "No EGaIn-specific corrosion test on aluminium or other structural metals was found in the sources read.", "Critical-mineral status of gallium and indium was not found in the fetched USGS text, so critical_lists is empty.", "Atomic weights of gallium and indium were not fetched, so the recipe parts carry no atomic_weight.", "Property count is 8, below the standard of 12 or more, because the sources give few EGaIn-specific values with a printed unit and no exponent. The 2012 study's other yield-stress values were not entered because their test conditions were not clear from the text read.", "Surface tension and band gap are not in spores/property-canon.yaml. The names surface_tension, oxide_layer_thickness and band_gap are used as they are.", "No space, vacuum, outgassing or radiation data for EGaIn were found in the sources read.", "The 2012 study's year is taken from its arXiv identifier (1201); no printed date was read." ], "story": { "why": "Eutectic gallium-indium (EGaIn) is a liquid metal at room temperature that conducts electricity and heat like a metal. Its melting point is 15.5 °C in the review and 15.7 °C on a vendor page, so it stays liquid in a normal room. Its main use in the sources is as the conductor in stretchable circuits made from liquid-metal-embedded elastomers. The trade-off is a Ga2O3 oxide skin that forms in air and changes how the liquid flows.", "uses": [ { "where": "Stretchable electronics", "line": "A 2021 review names EGaIn, with Galinstan, as one of the popular liquid-metal alloys for liquid-metal-embedded elastomers used in stretchable electronics." }, { "where": "Stretchable circuits by injection", "line": "The review illustrates a route in which the liquid metal is injected into microchannels in a cured elastomer, and copper wires are added at the ends." }, { "where": "Wearable power", "line": "The review also lists an LMEE-based nanotriboelectric device for renewable power supply for wearable electronics. The sentence does not name the alloy." } ], "can_do": [ { "label": "Stay liquid at room temperature", "line": "The melting point is 15.5 °C in the review's Table 1 and 15.7 °C on a vendor page (product 1880, purity 99.999% as printed).", "benchmark": "melting_point", "scope": "material" }, { "label": "Conduct heat", "line": "The review's Table 1 prints a thermal conductivity of 26.4 W/m.K for EGaIn, with no temperature stated.", "benchmark": "thermal_conductivity", "scope": "material" }, { "label": "Hold a shape after printing", "line": "The review says the Ga2O3 skin, about 0.5 to 3 nm thick, lets droplets be printed and moulded.", "benchmark": "oxide_layer_thickness", "scope": "material" } ], "compare": "EGaIn belongs to the Ga-based liquid-metal family of the review. Within the review's Table 1, EGaIn has a higher melting point and a slightly higher thermal conductivity than Galinstan, the other Ga-based alloy the review names. Both alloys carry the same oxide-skin trade-off. The compare table lists the values this profile holds.", "compare_rows": [ { "label": "Melting point", "benchmark": "melting_point", "scope": "material" }, { "label": "Thermal conductivity", "benchmark": "thermal_conductivity", "scope": "material" }, { "label": "Density", "benchmark": "density", "scope": "material" } ], "handling": [ "Prepare or heat the alloy under an inert gas such as argon, as the 2012 study did, to limit oxide formation.", "Expect a thin Ga2O3 oxide skin in air, and account for it if the flow must behave like the pure metal.", "Check a current safety data sheet for each lot before handling. This profile records no hazard codes." ], "good_for": [ "Liquid metal at room temperature. The melting point is 15.5 °C in the review and 15.7 °C on a vendor page.", "Stretchable conductors. The review names EGaIn as a popular liquid-metal alloy for liquid-metal-embedded elastomers." ], "watch_out": [ "Oxide skin. The Ga2O3 skin forms in air and adds a yield stress to the liquid, per the 2012 study.", "Composition differs between sources: 75.5 % Ga in the review and 77 % Ga in the 2012 study.", "No source we hold gives a corrosion test on aluminium or other structural metals for EGaIn." ], "verdict": "EGaIn is a practical room-temperature liquid metal when the oxide skin is designed in. Its hazard data are the main gap in this profile.", "recipe": { "line": "EGaIn is a binary liquid-metal alloy of gallium and indium. The review prints its composition as 75.5 % Ga and 24.5 % In by weight. The 2012 study mixed 77 % Ga with 23 % In, so the exact ratio differs between sources. The 2012 study made the alloy by heating the mixed metals in a quartz tube under flowing argon, then cooling them to room temperature.", "parts": [ { "name": "Gallium", "symbol": "Ga", "role": "The main constituent. It stays liquid near room temperature and forms the thin Ga2O3 oxide skin in air." }, { "name": "Indium", "symbol": "In", "role": "Lowers the melting point so the alloy is liquid at room temperature, which is what makes it useful as a liquid conductor." } ] }, "risk_groups": [ { "title": "For people", "lead": "We could not open a supplier safety data sheet for EGaIn, so this profile records no hazard classification. Search results from suppliers showed different hazard codes, and those are not used here.", "points": [ { "label": "Safety data sheet", "line": "The EGaIn data sheets we tried did not open in this run. Check the sheet for the lot you buy before handling." }, { "label": "Skin and eyes", "line": "No source we hold gives skin or eye effects for EGaIn." } ], "verdict": "No hazard classification found in any source we hold" }, { "title": "In a device", "lead": "The oxide skin and its yield stress are the main behaviour to design for.", "points": [ { "label": "Oxide skin", "line": "The review says a thin Ga2O3 skin forms in air, about 0.5 to 3 nm thick, and breaks and reforms under high surface stress." }, { "label": "Flow", "line": "The 2012 study attributes a larger, size-dependent effective surface tension in pendant drops to the yield stress of the oxidised liquid." } ] } ] }, "updated": "2026-11-01", "review": { "status": "draft", "method": "assistant", "checked_values": 8, "unreachable": 1, "caveats": 3, "note": "Written by an AI assistant on 2026-11-01 from the sources listed. 8 property values were read in this run. No EGaIn safety data sheet could be opened." }, "sources": { "alizadeh-2021": { "title": "Robust and Multifunctional Liquid-Metal Embedded Elastomers for Ultrastretchable Electronics: a Short Review", "id": "arXiv 2104.07327", "url": "https://arxiv.org/pdf/2104.07327", "year": 2021, "kind": "paper", "license": "cited, not reproduced" }, "arxiv-1201-4828": { "title": "Effect of oxidation on the Mechanical Properties of Liquid Gallium and Eutectic Gallium-Indium (Xu, Oudalov, Guo, Jaeger and Brown)", "id": "arXiv 1201.4828", "url": "https://arxiv.org/pdf/1201.4828", "year": 2012, "kind": "paper", "license": "cited, not reproduced" }, "prochem-1880": { "title": "Gallium-indium eutectic, product 1880 (ProChem Online product page)", "id": "ProChem Online product 1880", "url": "https://prochemonline.com/product/galliumindiumeutectic-1880", "year": 2026, "kind": "web", "license": "vendor page, cited not reproduced" }, "usgs-mcs2026-gallium": { "title": "Mineral Commodity Summaries 2026, Gallium", "id": "USGS MCS 2026, February 2026", "url": "https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-gallium.pdf", "year": 2026, "kind": "report", "license": "public domain (USGS)" }, "usgs-mcs2026-indium": { "title": "Mineral Commodity Summaries 2026, Indium", "id": "USGS MCS 2026, February 2026", "url": "https://pubs.usgs.gov/periodicals/mcs2026/mcs2026-indium.pdf", "year": 2026, "kind": "report", "license": "public domain (USGS)" } }, "license": "CC-BY-4.0", "url": "https://spacemushroom.com/profiles/egain/" }